2N5952 Search Results

2N5952

Abstract: 610-2N5952
Contextual Info: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N5952 - Central Semiconductor 2N5952

2n5952

Contextual Info: , One. ^smi-donciucto'i TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.S.A. 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching.

Contextual Info: 2N5952 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15 V(GS)off Min. (V)1.3 I(DSS) Max. (A)8.0m

2N5951

Abstract: 2N5952 2n5949 2n599 Variable resistor 50K ohm 100MHZ 2N59 2N5950 2N5953
Contextual Info: Datasheet 2N5949 2N5950 2N5951 2N5952 2N5953 W GiKv U 1 Sem iconductor Cora. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N-CHANNEL FET T0-92-18R CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION

2N5952

Abstract: transistor 2N5952 2n5952 equivalent
Contextual Info: 2N5952 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25°C unless otherwise noted

2N5952

Abstract: transistor 2N5952 2n5952 equivalent Variable resistor 50K ohm
Contextual Info: 2N5952 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25°C unless otherwise noted

2N5247

Abstract: 2N5952 2N5950 jfet 2n5952 PN4303 2N5246 2N5458 2N5459 2N5484 2N5485
Contextual Info: N-Channel JFET Transistors Part No. BVGSS Min. VP 2N5246 2N5247 2N5458 2N5459 2N5484 2N5485 2N5950 2N5952 BF245A PN4118 PN4303 PN5434 TIS73 V 30 30 25 25 25 25 30 30 30 40 30 25 30 Min. (V) 0.50 1.50 1.00 2.00 0.30 0.50 2.50 1.30 0.50 1.00 1.00 4.00 2N4338

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. RelY08| RelYfel @ C|SS NF ^rss @ TO-92 V BR GSS v GS(off) (V) loss PIN OUT @ (mmho) f Qimho) f <PF) (PF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) TO-92 2N3819

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

2N3819 equivalent

Abstract: 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent
Contextual Info: P-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON)(mA) J174 30.00 1.00 85 J175 30.00 .50 125 Operating Temperature: -55 o C to 150oC Part No. RDS(ON)(Ω) Drain-Source Min. On-State

FD333

Abstract: AD7121 AD524 AD624 AD625 AD625C AD625JN AD625S transistor 2N5952 1N5837
Contextual Info: a FEATURES User Programmed Gains of 1 to 10,000 Low Gain Error: 0.02% Max Low Gain TC: 5 ppm/؇C Max Low Nonlinearity: 0.001% Max Low Offset Voltage: 25 ␮V Low Noise 4 nV/√Hz at 1 kHz RTI Gain Bandwidth Product: 25 MHz 16-Lead Ceramic or Plastic DIP Package,

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

FD333

Abstract: C838C AD7121 AD625 Application Note transistor 2N5952 AD524 AD624 AD625 AD625C AD625JN
Contextual Info: a FEATURES User Programmed Gains of 1 to 10,000 Low Gain Error: 0.02% Max Low Gain TC: 5 ppm/؇C Max Low Nonlinearity: 0.001% Max Low Offset Voltage: 25 ␮V Low Noise 4 nV/√Hz at 1 kHz RTI Gain Bandwidth Product: 25 MHz 16-Lead Ceramic or Plastic DIP Package,

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

PN4360

Abstract: pn3687
Contextual Info: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. ReH ^OSl R e n ffsl C |SS c rss IF @ @ TO-92 V BR GSS VGS (O ff) (V y •ds >S PIN OUT (mmho) f Qimho) f <PF> (PF) W ) RG=1K 00 MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0

2N5949

Abstract: 2n5961
Contextual Info: TYPES 2N5949 THRU 2N5953 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 0 1 1 3 3 8 . A P R IL 1 9 7 0 SILECTt FIELD-EFFECT TRANSISTORS^ • Narrow IDSS and VQS{off Ranges • For Low-Noise Audio-Frequency Amplifier Applications

2N5485

Abstract: 2N5951 2N4416 2N5950 2N5952 Variable resistor 50K ohm 2N3819 2N4416A 2N5484 2N5486
Contextual Info: Junction FETs RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re IYfsl Re IYosj @ C|SS NF rs* @ V BR GSS TO-92 v GS(off) loss PIN OUT @ (mmho) f Qimho) f <PF) <PF) <dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) (V) TO-92 2N3819