2N5358 Search Results

2N5358

Abstract: 2N5363 2N5361 2N5360 2N5364
Contextual Info: TYPES 2N5358 THRU 2N5364 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS _ B U L L E T IN N O , D L -S 7 1 1 1 4 3 6 , A P R IL 1971 FOR S M A LL-S IG N A L A PPLICATIO N S • Narrow Ip s S a id VQ S off Ranges • For Low-Noise Audio-Frequency Am plifier Applications

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3967

Abstract: 2N3369 2N3370 2N3460 2N3821 2N3822 2N3967A 2N3968 NJ16
Contextual Info: INTER P E T C OR P EbE D • 4a2Lflflö 0 0 0 0 1 6 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiom V<8« GSS Ig nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 -4 0 -4 0 -5 0 -5 0 -5 0 -1 -1 -1 -1 -1 2N3821

MP833

Abstract: e201 siliconix MPF4118 MPF4117 INTERFET SMP4117 TP3370 MP830 SMP3370 TP4119
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 9t. VGS(Off) Max loss Max CI. Max PD Max (V) (A) Min (S) Max (V) (A) (F) (W) Derate at (WrC) Tope, Max (OC) Package Style N-Chann I JFETs, (Cont'd) 5 10 MPF4117A PN4117 PN4117A PN4117A PN4117A

MPF111

Abstract: 2N5459 MOTOROLA 2N3436 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola
Contextual Info: ¥4 MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA * SC D E | b B b 7 a S S □ □ 3fl03b <D I O D E S / O P T O 34C :> 1 38036 D '7^-2'J-tsr' FIELD-EFFECT TRANSISTORS DICE continued) die n o . 2C4220 LINE SOURCE — DFM131 This die provides performance equal to or better than that of

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

Contextual Info: ALL E GR O MICROSYSTEMS 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • G 5 0 4 3 3 Ô 0 Q 0 3 b l 3 1 ■ ALûR S E M I C O N D S / ICS 9 3 D 03 6 1 3 3> -T '2 -? -Z S METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

NF5458

Abstract: 2N4303 2N3369 2N5363 NF523 2n3367 2N5163 nf5457
Contextual Info: N-Channel FETs 9 neral purpose amps Type No. Case Style BVoss "BVOOO IVI M,n lass InAI Max VII Illmholl lOSS ImAI Min Max Min Max VploHI IVI Max C'u IpFI Max Cru IpFI Max NF IdBI I"en In nV.,fHl1 Max ProcIII No. 2N3069 TO•18 '50 1 2 10 1000 2500 10 15 4 52

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

2N5717

Abstract: 2n4303 2N5359 2N5716
Contextual Info: M O M ? ©Ä¥Ä{L© L O W P O W E R FIELD EFFECT T R A N S IS T O R S L s LKJ Type Number LnJ ZA iLb , Case Style (T O - Geometry L r v i/ L N J ^ L a JZA ^ LN J^ Le ^ BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max

Contextual Info: SPR AGU E/SEMIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. T3 D • 0513050 G 0 D3 b l 3 2 93D 0361 3 3> S E M I C O N D S / ICS - r ~ z . ? - 7* s METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at Tfl = 25°C

MPS 0715

Abstract: 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola
Contextual Info: Order this document by MPQ2001/D MOTOROLA MPQ2001 Semiconductors BOX 2 0912 • P H O E N IX , A R IZ O N A 85036 Advance Inform ation 2 - NPN SILICON BIPOLAR 2 -N-CHANNEL J-FET QUAD TRANSISTORS SILICON ANNULAR* NPN BIPOLAR, N-CHANNEL J-FET QUAD TRANSISTOR

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY