2N516 Search Results

Contextual Info: MOTOROLA SC DIODES/OPTO 2SE D b3b72S5 0001161 5 T -à f-n MCR&164-67 (See 2N51681 Thyristors f e » '- - 4 ^ d S i Silicon Controlled Rectifiers M CR6200 S6210 S6 2 2 0 Series . . . designed for industrial and consumer applications such as power supplies,

2N5160

Contextual Info: 2N5160 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5160 Availability Online Store

2N5160

Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516
Contextual Info: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica­

2n5169

Abstract: 2N5170
Contextual Info: M O T O R O L A SC { D I O D E S / O P T O l ÏÏÏ DeT | L,3ti7aSS □ □ 7 ô £ï û Ll ta T ~ 2N5164 thru 2N5171 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristor . . . designed for industrial and consumer applications such as power supplies,

2N5164

Abstract: 2N5171 2N5170 2N5168-2N5171 2N5166 2N5168 2N5169 2N5165 2N5167
Contextual Info: M O T O R O L A SC { D I O D E S / O P T O l ÏÏÏ DeT | L,3ti7aSS 2N5164 thru 2N5171 S ilicon C ontrolled R ectifiers Reverse Blocking Triode Thyristor . . . designed fo r industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls.

Contextual Info: DIGITRON SEMICONDUCTORS 2N5164-2N5171 SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

TO-203AA

Abstract: thyristor welder mcr 100a MCR6200 S6210 S6220
Contextual Info: MOTOROL A SC DIODES/OPTO 2SE D b3h?5ss o o a n a i 5 T-J.S~-/7 MCR5164-67 (See 2N51681 Thyristors Silicon Controlled Rectifiers MCR6200 S6210 S6220 Series . . . designed for industrial and consum er applications such as power supplies, battery chargers, temperature, motor, light and welder controls.

transistor rc 3866

Abstract: rc 3866 transistor 3866 s t 3866 power transistor Transistor 2N5160 transistor t 3866 2N5160 t 3866 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line 1C = - 4 0 0 mA POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR PNP SILICON . . . designed fo r am plifier, freq u e n cy m ultiplier or o scillato r applica­ tion s in m ilitary and industrial equipm ent. Su itab le fo r use as C lass A,

2N5160

Contextual Info: me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N5160 The RF Line PNP SILICON AMPLIFIER TRANSISTOR PNP SILICON RF POWER TRANSISTORS . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,

2N5163

Contextual Info: t-Proauati, Una. /(ls ii.su TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5163 N-CHANNEL FIELD EFFECT TRANSISTOR PHYSICAL DIMENSIONS DIFUSSED SILICON PLANAR II TRANSISTOR In accordance will) JIDIC (10 101',) milline

2N5160

Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6 3 6 725 4 MOTOROLA SC ST DT|h3b72SM 0D7TMST 0 89D 79459 <XSTRS/R F 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5160 Die Source Same as 2N5160 RF TRANSISTOR PNP SILICON M A XIM U M RATINGS Symbol Value Collector-Emitter Voltage

2N5160

Abstract: MXR5160 2N5160 MOTOROLA
Contextual Info: M O T O R O L A SC -CXSTRS/R F> "ñ^ 6 3 6 7 2 5 4 M O T O R O L A SC CXSTRS/R F DË_|h3b72SM 0D7TMST 0 89D 7 9 4 5 9 D7v?/-2 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5160 Die Source Sam e a s 2N5160 RF TRANSISTOR PNP SILICON M AXIM UM RATINGS Sym bol Value

2N5168

Abstract: 2n5169
Contextual Info: 2N5168 thru 2N5171 MCR5164 thru MCR5167 S ilic o n C o n tro lle d R e ctifie rs Re verse B lo c k in g T rio d e T h y risto rs . . . designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

rosemount 118mf

Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A
Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire

1N148 diode

Abstract: 1N148 2N160 LF155A exponential Voltage-to-Frequency Converter ic lf351 as operational amplifier ic u440 ad611 Power AMPLIFIER 6012 "High Speed Amplifiers"
Contextual Info: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTION FEATURES • ■ ■ ■ Guaranteed Offset Voltage –55°C to 125°C Guaranteed Drift Guaranteed Bias Current 70°C 125°C Guaranteed Slew Rate 150µV Max 500µV Max 4µV/°C Max

Tektronix 2245a

Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
Contextual Info: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note

4013 flipflop

Abstract: oscilloscope service manual teledyne transistor cross reference lt317 ad639 CA3096 "cross reference" 6012 DAC CA3096 ltc1043 2N2369
Contextual Info: rru m i Application Note 14 TECHNOLOGY March 1986 Designs for High Performance Voltage-to-Frequency Converters Jim W illiam s Monolithic, modular and hybrid technologies have been The positive input voltage causes A1, the servo amplifier, used to implement voltage-to-frequency converters. A

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Datasheet of 7490 IC decade counter

Abstract: VDR-307 SCO-106 ic 7490 pin diagram ic 7490 Decade Counter data sheet 7490 Decade Counter internal diagram of 7490 IC IC sine wave generator for 1Hz-to-100MHz Julie Research Labs SP656
Contextual Info: Application Note 9 August 1986 Application Considerations and Circuits for a New Chopper-Stabilized Op Amp Jim Williams A great deal of progress has been made in op amp DC characteristics. Carefully executed designs currently available provide sub-microvolt VOS ΔT drift, low bias currents

74H123

Abstract: 74hc123 Spice LT1597 darlington array with clamp diode 2A AN7418 tektronix 454 service manual 2N3440 HARRIS SEMICONDUCTOR 74hc163 spice 74hc123 AN7421
Contextual Info: Application Note 74 July 1998 Component and Measurement Advances Ensure 16-Bit DAC Settling Time The art of timely accuracy Jim Williams Introduction Instrumentation, waveform generation, data acquisition, feedback control systems and other application areas are

aeg t15

Abstract: T12F400 CR08E SS220D T12F400CCC T12F400CDC SF16G14 20RIF40W20 N400COB S4020L
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VORM V IT Max (A) ITSM (A) lOT Max (A) VaT Max (V) IORM dv/dt (A) (V/U8) to Max (8) Operating Temperature coe) Min Max Package Style SeRs, VDRM >= 400 V (Cont'd) 5 10 SC1SC40 SF16G14 SF1SG14

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­