2N5149 Search Results

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

2N5001

Abstract: 2n5149 2N5147 2N5000 transistor 2N 3792 2N4999 2N5001 ti APPLICATION for MIN 5758 2N4998 2N5148
Contextual Info: TYPES 2N 4999, 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W ITH C O M P U TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y I * For Complementary Use With 2 N 49 98, 2 N 50 00, 2N 5 1 4 8 , and 2N 51 50

2N5000

Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148
Contextual Info: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

Contextual Info: 2N5149 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SDT69504

Abstract: 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333
Contextual Info: Device Type 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333 2N5597 SDT3501 SDT3502 SDT3503 SDT3504 SDT3505 SDT3506 SDT3507 SDT3508 SDT3509 SDT3510 SDT3511 SDT3512 SDT3513 SDT3514 SDT3515 SDT3516 SDT3550 SDT3551 SDT3552 SDT3553 SDT3554 SDF3575

2N5286

Abstract: 2N540S 2N5867 2N5872 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905
Contextual Info: \ P I ELECTRONICS INC Eb DE | DÜMBSTS □□□□2Eb 7 |^T-3 3-Ot COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333

Contextual Info: P I ELECTRONICS INC Eb d F | □□MBS'iS OOOOSEb 7 |^*T-3 3-01 COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333

2N5146

Abstract: 2n5000 2N4998 n4998
Contextual Info: TYPES 2N4998, 2N5000, 2N5148. 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY 3J CD H mc< For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 < r 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

JANS2N5416

Abstract: JANTX2N3868 2N3202 2N3203
Contextual Info: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

2N5189

Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MAX *ICEO *ICES *ICEV

2N3775

Abstract: 2N3202 2N3203
Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203

BF357

Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
Contextual Info: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

SDT423

Contextual Info: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A

2N5189

Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION @ l c VCE VCE(SA T ) ® ' C (m A) (m A) (V) (V) h :E VCBO v CEO v EBO •CBO ® VCBO (V) (V) (V) (V) (M ) NF Cob <PF) •on (ns) *off (ns) (dB) *TYP *TYP TYP TYP TYP MAX MIN MIN MIN 200

b0348

Abstract: 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 SML69503 SML69511 SML69603 SML69611 SML3503 SML3507 SML3511 SML3515 ~b~~~~4 25 30 SOT3554 SOT3554 B0638 SOT3551 SOT3551 SOT3551 SOT3577 SOT3577 ~~:g77 35 40 BLX40 BLX40 SOT69503 SOT69503 SOT69603 SOT69603

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N5415

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P