2N4046 Search Results

Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113 2N4114 2N4150 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4240 2N4260 2N4269

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h =E VCEO v EBO 'CBO v CBO (V) (HA) (V) @ lc « VCE VCE(SA T) @ >C (mA) 00 (V) (V) (mA) ''C EO *VCER *T (MHz) Cob TYP NF (PF) •on (ns) •off (ns) (dB) *TYP TYP *TYP •TYP

2N4033

Abstract: 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) *TYP *TYP *TYP *TYP *TYP MAX MAX *ICEO *ICES *ICEV *ICER

2N5146

Abstract: 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468 SP3725QDB
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

2N4314

Abstract: 2N4033 2N4358 2N4890 transistor 2N4033 2N4030 2N4031 2N4032 2N4036 2N4037
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h-E v CEO v EBO 'CBO v CBO (HA) (V) (V) (V) @ ic « vCE VCE(SA T) ® >C (mA) (V) 00 (mA) ''C EO *VC ER NF »T (MHz) Cob <PF) ••on (ns) •off (ns) (dB) *TYP TYP TYP •TYP

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

BC207b

Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
Contextual Info: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

2N3409

Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
Contextual Info: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB

2N4033

Abstract: 2N4125 NPN 2N4047 8VC80
Contextual Info: D i V1CÍ TYPE PACKAGE BVCEO 8V C 80 BVEBO C B O # V C B IV M M |V I M M IVI M M l» A | 1.7*A 1.7*A 50 50 50 2N4013 ÎN 4 0 I4 2N4036 2N4027 2N 40Î8 NPN NPN PNP PNP PNP T O -18 T O -18 T O - 18 T O -18 T O -18 30 50 60 80 60 50 80 60 80 60 6 6 5 5 5 2N4029

2n2222 itt

Abstract: 2N2222A itt itt 2n2222 BSY86 BSY85 BSY83 itt 2N2222A 2N2219 transistor BSY84 2N2218A
Contextual Info: ITT Semiconductors NPN Transistors N P N S ilicon M edium Current Transistors Metal Can TO-39 or TO-18 . V CBo up to 75V. O u tlin e D raw ing H o. 66 ap plies fo r TO -39 ty p es . O u tlin e D raw ing N o. 65 ap plies fo r TO -18 ty p es . M ax. ratings

Contextual Info: _ _ ADVANCED 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR SEMI CONDUCTOR - flâ D Ë loaSÔ B S 4 82D 0 0 0 4 4 0000044 D S IL IC O N _ _ _ _ « _ _T Ü A P J S iS T O fiS Pd @ Tc=25°C DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734

NPN transistor 2n2222A plastic package to116

Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package

um9c

Abstract: 2N2846 2N3648 2n2848 2N3734 2N2242 2N2368 2N2369 2N2369A 2N2410
Contextual Info: bl NPN METAL CAN «-V h FE at •c V CE V min ma mA V 15 15 15 15 30 5 4 4 4 5 40 20 40 40 30 120 40 120 120 120 10 10 10 10 150 1 1 1 1 10 15 40 40 , 40 40 6 15 20 20 20 4 5 6 5 5 30 40 50 25 40 150 120 150 — — 20 10 10 io 10 0.4 1 1 1 1 2N2784 2N2845

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered