2N260 Search Results

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

2N2598

Abstract: 2N2599 2K25 2N4260 N2591 2N2603 2n5179 2N915 2N2459 2N2460
Contextual Info: 8134693 SEMICOA Type NPN PNP 2N260JL 2N2521 2N2602 2N2522 2N2603 2N2459 2N2590 2N2460 2N2591 2N2461 2N2592 2N2462 2N2593 2N2515 ~2N2595 2N2596 2N2516 2K2597 2N2518 2N2598 2N2599 2N2519 : 2N260Ó 2N2599R 2N2600A ' Type NPN 40 400 400 400 400 400 400 400 400

P-Channel JFET

Abstract: 2N2609 TO206AA
Contextual Info: TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS TA = +250C unless otherwise noted Parameters / Test Conditions Symbol Value Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Storage Temperature Range

2N2608

Abstract: mosfet p channel
Contextual Info: Back to FETs Technical Data 2N2608 JAN POWER MOSFET P CHANNEL MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/295 …DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TA = 250C unless otherwise noted

2N2608

Abstract: 2n2844 2N2843 2n2609 VGS-30V PCHANNEL 2N2608CHP 2N2608JAN 2N2843CHP 2N3909 2N3909CHP
Contextual Info: • G en eral Purpose A m plifiers BENEFITS • JAN Approved Version Available 2N2609 Perform ance Curves PC PD See Section 5 . Siliconix 2N2608 S p-channel JFETs designed fo r TO -1 8 See Section 7 •ABSOLUTE M AXIMUM RATINGS 25°C Gate-Drain and Gate-Source Voltage (Note 3 ) . 30 V

Contextual Info: 2N2604J Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)30m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)10m

Contextual Info: 2N2605+JANS Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N2609

Abstract: mosfet p channel
Contextual Info: Technical Data 2N2609 JAN POWER MOSFET P CHANNEL MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/296 …DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TA = 250C unless otherwise noted Parameters / Test Conditions

2n26

Contextual Info: 2N2605 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Noise-level amplifier circuits • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2605J • JANTX level (2N2605JX)

2N3347

Abstract: 2N3350 2n3349 2N33 2N3352 2n3348 NS2N
Contextual Info: TYPES 2N3347 THRU 2N3352 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 2 1 1 8 8 1 , M A R C H 1 9 7 2 TWO P-N-P TRANSISTORS IN ONE PACKAGE Each Triode Electrically Similar to 2N2604 and 2N2605 Transistors Recommended for Low-Noise, High-Gain Differential Amplifiers

Contextual Info: 2N2608+JAN Transistors P-Channel JFET Military/High-RelY V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)10n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Contextual Info: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

2N2609

Abstract: 2N2608 2N2607 "P-Channel JFET" 2N2807 JFET 50ma -40v P-Channel JFET jfet 2N
Contextual Info: 2 N 2 6 0 7 -2 N 2 6 0 9 2 N 2 6 0 9 JAN P -C h a n n e l JF E T O ßfrSH O IL APPLICATIONS • Low-level Choppers • Data Switches CHIP TOPOGRAPHY PIN CONFIGURATION 5010 for 2N2607, 8 TO-18 4-, • Comm utators A B SO LU T E M A X IM U M R A T IN G S @ 25°C (unless otherwise noted)

2N2609

Abstract: 206AA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/296 DEVICES LEVELS 2N2609 MQ = JAN Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Contextual Info: 2N2605CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N2608

Abstract: 2N2609 2N2607 X2N2607 p-channel-jfet X2N2608 X2N2609 2N2607-2N2609
Contextual Info: CALOGIC 1ÖM4325 MfiE D CORP OOOOSflb 1 I CGC caloric CORPORATION V 2N2607-2N2609 APPLICATIONS ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Low-Level Choppers • Data Switches • Commutators G ate-Source V o lta g e . 30V

2N2461

Abstract: 2n246a 2N2603 2N4260 2N5032 2n5179 2N915 2N92 2N2462 2N2515
Contextual Info: LOW LEVEL AMPLIFIERS Cont’d Type NPN PNP 2N260JL _2N2521 2N2602 2N2522 2N2603 2N2459 2N2590 2N2460 2N2591 2N2461 2N2592 2N2462 2N2593 2N2515 2N2595 •2N2596 2N2516 2N2597_ 2N2518 2N2598 2N2599 2N2519 2N260Ö 2N2599A 2N2600A ' Type NPN 5 Maximum Ratings

2N2605

Abstract: transistor t1W
Contextual Info: SEMICONDUCTOR TECHNICAL DATA s 2N2605JAN, JTX, JTXV, JANS Processed per MlL-S-19500/354 PNP Silicon Small-Signal Transistor < M g n « lor f l M . v - p u w . c h y s t a io n c s <* a p p .^ t . o n , 2805 Veteran* Highway Suite u Ronkorkena NY 11778 [ m a x im u m r a t in g s

Contextual Info: Small Signal Transistors TO-46 Case* TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO S VCBO V <V) (V) (H*) •ICEV Mm MIN MIN MAX e ic hFE (niA) (V) 9 VCE VCE(SAT) IC Cob (V) (V) (mA) MAX MIN MAX <PF> •ff; ' toff : PM# fcipl: (n«) MAX MW MAX MAX 2N2604

PN4250

Abstract: MPS-A70
Contextual Info: PNP Transistors ö cn o L O W LEVEL AMPS Type No. Case Style Vc b o V) Min V CEO (V) Min 2N2604 TO-46 60 45 DO m v EBO (V) Min 6 'CBO (" A I Max 10 v CR (Ç f *>FE a Min Max 350 45 60 40 2N2605 TO-46 60 ‘ 45 6 10 2N3548 TO-18 TO-18 60 60 60 45 6 6 25

UC451

Contextual Info: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20

Contextual Info: Small signal Transistors TO-46 Case TYPE NO. DESCRIPTION BVCBO BVCEO bvebo ICBO « VCBO V (V) 00 MIN MIN MIN (HA) *ICEV MAX 1*F1 O le (mA) (V) OVCE VCE(SAT) 0 1C Cob <v> (V) 0*A) NF toff (MHz) (dB) (M) MAX MM MAX MAX MAX MIN MAX m fT 2N2604 PNP LOW NOISE

2N5021

Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
Contextual Info: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S

Contextual Info: M OT O R O L A SC X S T R S /R 15E D I b3fc.72S4 aQ0b2b3 7 | F 2N260S T -il-Il JAN, JTX AVAILABLE CASE 26-03, STYLE 1 TO-46 TO-206AB 3 C ollector MAXIMUM RATINGS Symbol Value U nit Collector-Emitter Voltage VcEO 45 Vdc Collector-Base Voltage VcBO 60 Vdc