2N131 Search Results

Contextual Info: 2N1319 Ge PNP Lo-Pwr BJT 11.21 Transistors Transistors Bipolar Ge PNP Low-Power . Page 1 of 1 Enter Your Part # Home Part Number: 2N1319 Online Store 2N1319 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 2N1311 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)75 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.15 h(FE) Max. Current gain.

Contextual Info: 2N1318 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)10 I(C) Max. (A)400m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.40 h(FE) Max. Current gain.150

Contextual Info: 2N131 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)10m Absolute Max. Power Diss. (W)85m Maximum Operating Temp (øC)85’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.53 h(FE) Max. Current gain.

Contextual Info: 2N1313 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)4.0 h(FE) Min. Current gain.40 h(FE) Max. Current gain.125

70U15

Abstract: ge company 2N1311 ge npn
Contextual Info: 2N1311 Ge NPN Lo-Pwr BJT 9.21 Transistors Transistors Bipolar Ge NPN Low-Power . Page 1 of 1 Enter Your Part # Home Part Number: 2N1311 Online Store 2N1311 Diodes Ge N PN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 2N131A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)102m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)15uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2N1310 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)90 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.30Â h(FE) Max. Current gain.

Contextual Info: 2N1312 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)50 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.

2S877

Abstract: diode GG 14 2S8370 Low-Power Germanium PNP AF201U TA269 2N270 2s875 2G108 2N404
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2S843 MA899 MA899 TA269 TA269 TA269 2N404 2N1370 2N1374 2N1382 ~~~~g~A 15 20 2N1287 2N658 1340 GT20 GT20 GT83 GT83 TAM14 +~~: 25 30 TA14 TR18 TA18 TR18 2S8185 2S8111 2N249 2N291 ~~~~OU 35 -40 AF201U 2N131

Contextual Info: 2N1316 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.50 h(FE) Max. Current gain.200

Contextual Info: 2N1317 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)400m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.45 h(FE) Max. Current gain.180

Contextual Info: 2N1319 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)400m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)71õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.15 h(FE) Max. Current gain.

MP2145

Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

MP2143

Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

2N1132

Abstract: 2N1131 2N1131L 2N1132L
Contextual Info: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3