29LL800 Search Results

T 3036

Abstract: 1mx8 29LV004T V200B-12 3036 MBM29LV002B MBM29LV008T
Contextual Info: Flash Memory 3 • Flash memory (3V ONLY) T a = 0 °C to +70 °C Organization ( Wx b) 256Kx8 Part Number Power Consumption Access Cycle max. (mW) Time Time max. (na> min. (ns) Operating Standby Mods (CMOS level) MBM29L.VQÔ2T-10 MBM29LV002B-10 MBM29LV002T-12

29LL800

Abstract: L6BH
Contextual Info: P R E L IM IN A R Y 29LL800T/29LL800B AMD£I 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically

Contextual Info: ADVANCE INFORM ATIO N A M D ii 29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications

Contextual Info: Advance information •■ 29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

Contextual Info: PRELIMINARY 29LL800T/29LL800B AMDZ1 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically

AS29

Abstract: 11100M
Contextual Info: Advance information •■ 29LL800 1 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features • O rg an izatio n : 1M x 8 /5 1 2 K x 16 • Sector arch itec tu re - O n e 16K; tw o 8K; o n e 32K; an d fiftee n 64K b y te sectors - O n e 8K; tw o 4K; o n e 16K; an d fiftee n 32K w o rd sectors

land pattern for TSOP 2 54 pin

Abstract: land pattern for TSOP 56 pin TSOP 54 land pattern 40013A land pattern for TSOP
Contextual Info: n H igh p e rfo rm a n c e 1 M X 8 /5 1 2 K X 1 6 2.2V CMOS Flash EEPROM AS29LL8ÜÖ II 1 M X 8 / 5 1 2 K X 1 6 CMOS Flash EPROM Advance information Features •O rganization: 1M x 8/512K x 16 • Sector architecture - • Low power consumption - 8 mA typical read current

80000h8

Contextual Info: P R E L IM IN A R Y Am29 LL800T/Am29 LL800B A M D tl 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically

Contextual Info: PRELIMINARY AM Dil 29LL800B 8 Megabit 1 M x 8 -Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications

Contextual Info: ADVANCE INFORM ATIO N A M D ii 29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications

Contextual Info: Advance information •■ 29LL800 A 2.2V !Mx8/512Kxl6 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)

Contextual Info: PRELIMINARY A M D * 29LL800T/29LL800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically

Contextual Info: ADVANCE INFORMATION AMDZ1 29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications

29F400TA

Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
Contextual Info: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)