10OOOH Search Results

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

Contextual Info: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory

8a21

Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
Contextual Info: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION

Contextual Info: FLASH MEMORY CMOS X M B 800 E k ts s FEATURES Voltage range 2.2 V to 2.7 V for read, program and erase Minimizes system level power requirements Low power consumption 15 mA maximum active read current for Word Mode 10 mA maximum active read current for Byte Mode

29F800TA

Abstract: 29f800ba MBM29F800 29F800T
Contextual Info: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)

Contextual Info: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

104 k5k capacitor

Abstract: motorola HEP 801 motorola HEP cross reference sony KHS - 313 Micropower Buffered Variable Voltage DS2251-64-12 motorola HEP 320 cross reference 80c154 intel k5k 104 capacitor 104 capacitor k5k
Contextual Info: TABLE OF CONTENTS SOFT MICROCONTROLLER USER’S GUIDE Section 1 Introduction . 1 Section 2 Selection G u id e . 4

KM28U800

Abstract: ba1g KM28U800-T
Contextual Info: Preliminary FLASH MEMORY KM28U800-T/B 8M Bit 1M X8/512K x16 NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7 to 3.6 V tor Read and Write operations • Organization 1,048,576 x 8 bit (Byte mode) / 524,288 x 16 bit (Word mode) • Fast Read Access Time : 90 ns

1A14A

Abstract: T28F200 28F400-T
Contextual Info: in te l PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28 F 4 0 0 B V -T /B , 28 F 4 0 0 C V -T /B , 2 8 F 0 0 4 B V -T /B 2 8 F 4 0 0 C E -T /B , 2 8 F 0 0 4 B E -T /B Intel SmartVoltage Technology — 5V or 12V Program/Erase

29LL800

Abstract: L6BH
Contextual Info: P R E L IM IN A R Y Am29LL800T/Am29LL800B AMD£I 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.

Contextual Info: [p[F 3 E y T IPG ?] in te l 4-MBIT 256K x 16, 5 1 2 K x 8 ) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel SmartVoltage Technology — 5V or 12V Program /Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at

Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS826B - SEPTEMBER 1996 - REVISED OCTOBER 1987 * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • f • • Organization 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture

29f8008

Abstract: 29F800
Contextual Info: TMS29F800T, TMS29F8O0B 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES • Single Power Supply Supports 5 V ±10% Read/Write Operation Organization. . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector

Contextual Info: TMS29LF008T, TMS29LF008B 1048576 BY 8-BIT FLASH MEMORIES SMJS846A - MAY 1997 - REVISED NOVEMBER 1997 Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization . . . 1048576 By 8 Bits • • Array Blocking Architecture - One 16K-Byte Boot Sector

Contextual Info: TMS29F008T, TMS29F008 1048576 BY 8-BIT FLASH MEMORIES SMJS845A - MARCH 1997 - REVISED OCTOBER 199 • • • • Organization . . . 1048576 By 8 Bits Array-Blocking Architecture - One 16K-Byte Boot Sector - Two 8K-Byte Parameter Sectors - One 32K-Byte Sector

Contextual Info: MT90500 S E M IC O N D U C T O R Multi-Channel AAL1 SAR Preliminary Information Features • AAL1 S egm entation and R eassem bly device com patible w ith S tructured Data Transfer SDT as per ANSI T 1 .630 and ITU 1.363 standards • Transports 64kbps and n x 64kbps traffic over

Contextual Info: M ITSUBISHI LSIs M5M28FB/T800VP-12I 8,388,608-BIT 524,288-WORD BY 1 6-BIT CMOS 3.3V / 5V Block Erase Flash Memory DESCRIPTION The Mitsubishi M o b ileF L A S H M5M28FB/T800VP-12I is 3.3V (read) /5 V (program/erase) high speed 8 ,38 8,60 8bit CMOS boot block Flash Memory with the BGO (Back Ground Operation) feature. The BGO feature of the

programming AM29F400

Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Contextual Info: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements

DS2501 transistor

Abstract: WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK
Contextual Info: J Copyright 1996 by Dallas SemiconductorCorporation. All Rights Reserved. Dallas Semiconductor retains all ownership rights in the technology described herein. Trademarks and registered trademarks of Dallas Semiconductor include each of the following: Dallas Semiconductor Corporation

SUSCON capacitor

Abstract: st10f168s PEC 513 DIODE free circuit diagram pc uprog SUSCON t71c t81c PQFP144 ST10F168 st10f168-q6
Contextual Info: ST10F168 16-BIT MCU WITH 256K BYTE FLASH MEMORY AND 8K BYTE RAM PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ HIGH PERFORMANCE CPU -1 6 -B IT CPU WITH 4-STAGE PIPELINE - 80ns INSTRUCTION CYCLE TIME AT 25MHz CPU CLOCK - 400ns 16 X 16-BIT MULTIPLICATION

st10 Bootstrap

Contextual Info: ST10F163 16-bit MCU with 128KByte Flash Memory DATA SHEET • High performance CPU ■ High performance 16-bit CPU with 4-stage pipeline ■ 80ns instruction cycle time @ 25MHz CPU clock ■ 400 ns multiplication 1 6 x 1 6 bits ■ 800 ns division (32 /1 6 bit)

Contextual Info: DS1868 PRELIMINARY DALLAS SEMICONDUCTOR DS1868 Dual Digital Potentiometer Chip FEATURES PIN ASSIGNMENT • Ultra-lowpowerconsumption, quiet, pumplessdesign • Twodigitally controlled, 256-position potentiometers • Serial port provides meansfor setting and reading both

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES I • • • • • • • • • • • • Organization . . . 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors