06000H Search Results

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Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

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Abstract: TC58F401
Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

A29L008

Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Contextual Info: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

A29L800

Abstract: A29L800V
Contextual Info: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.

Architecture of TMS320C54XX

Abstract: data addressing modes of TMS320C54xx digital TLV2772 STK 3 channel amp STK 5 channel amp STK power amplifier module overview C5402 TLV2272 TLV2544 TLV2548
Contextual Info: Application Report SLAA093A - October 2000 Interfacing the TLV2544/TLV2548 ADC to the TMS320C5402 DSP Lijoy Philipose AAP Data Conversion ABSTRACT This application report presents a hardware and software solution for interfacing the TLV2544/TLV2548 12-bit, 200-ksps, 4/8-channel, low-power, serial analog-to-digital converters to the

amic a290021t-70

Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Contextual Info: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current

M29W008A

Abstract: M29W008AB M29W008AT
Contextual Info: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS411-00003-1v0-E ASSP ISO/IEC 18000-6 Type-C Compliant FRAM Embedded UHF Band RFID LSI TM MB97R803A/B, MB97R804A/B • OVERVIEW This specification defines the LSI specification for the passive RFID Tag LSI “MB97R803A/B, MB97R804A/

20510D

Contextual Info: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

AM29F100T

Contextual Info: HNA: AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V + 10% for read, erase, and program operations — Simplifies system-level power requirements

Am29DL400BT

Contextual Info: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,

Contextual Info: AMD£1 ADVANCE INFORM ATION Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents

29f1008

Abstract: 29f100
Contextual Info: FINAL AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically

amd 29F400AB

Abstract: 29F400AT 29F400AB
Contextual Info: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance

am29f400bb

Contextual Info: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements

29f004b

Contextual Info: ADVANCE INFORMATION AM D il Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents

am29f400b

Abstract: am29f400bb 22AB AM29F400BT
Contextual Info: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations