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    2955E Search Results

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    Siemens 3VA5295-5ED31-2AA0 (G80-058)

    BRKR 3VA52 3P 15A 35KA FTFM 100
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    RS 3VA5295-5ED31-2AA0 (G80-058) Bulk 2 Weeks 1
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    Siemens 3VA5295-5ED32-2AA0 (G80-059)

    BRKR 3VA52 3P 15A 35KA FTFM 100 NUT
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    RS 3VA5295-5ED32-2AA0 (G80-059) Bulk 2 Weeks 1
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    Siemens 3VA5295-5ED36-2AA0 (G80-060)

    BRKR 3VA52 3P 15A 35KA FTFM 100 AL
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    RS 3VA5295-5ED36-2AA0 (G80-060) Bulk 2 Weeks 1
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    onsemi MMFT2955ET3

    Trans MOSFET P-CH Si 60V 1.2A 4-Pin(3+Tab) SOT-223 T/R
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    Bristol Electronics () MMFT2955ET3 32,185 1
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    MMFT2955ET3 1,975 1
    • 1 $1.80
    • 10 $1.35
    • 100 $1.12
    • 1000 $0.59
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    Motorola Semiconductor Products MTD2955ET4

    Trans MOSFET P-CH Si 60V 12A 3-Pin(2+Tab) DPAK T/R
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    Bristol Electronics () MTD2955ET4 10,174
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    MTD2955ET4 2,128 1
    • 1 $1.13
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    Chip 1 Exchange MTD2955ET4 3,255
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    2955E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P2955E

    Abstract: 2955E TP2955E TP2955 sped sipa
    Contextual Info: MOTOROLA Orctor Ms document SEMICONDUCTOR TECHNICAL DATA by 2955E/D Designer's Data Sheet M T P 2955E TM O S E-FET™ P o w er Field E ffe c t Transistor M otorola P rila rrtd Daylca P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES


    OCR Scan
    mtp2955e/d8s036mtp2955bdp2955e+52955etp2955etp2955spedsipa PDF

    2955E

    Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3
    Contextual Info: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.


    Original
    mmft2955er14525mmft2955e/d2955e+3an569mmft2955et1mmft2955et3 PDF

    2955E

    Abstract: MTA2955E
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM


    OCR Scan
    t0-220o-220b3b72542955e+2b3b7554mta2955e PDF

    25CC

    Abstract: 369A-10 AN569 MTD2955E MTD2955E-1 ims 200 MTD2955E1
    Contextual Info: MOTOROLA SC XSTRS/R F b ftE b3b?254 D DCnfl53Q ôST • MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA 2955E Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r M o to ro la Preferred Device P-Channel Enhancem ent-M ode Silico n Gate D P A K for Surface M o u n t or


    OCR Scan
    g01fls3025cc369a-10an569+4mtd2955emtd2955e-1ims 200mtd2955e1 PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original
    dl135/dapr-2001r14525dld601+10e3p102t2-955ve6n02t9n10edl1351086vl1n06c24 v dc relay 34.51.7d3n0320n06hl PDF

    zt751

    Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
    Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30


    OCR Scan
    ot-223bsp19at1pzta42t1bf720t1+13bsp20at1sp19abf720sp20apzta98t1pzta92t1zt7513055l2955e3055ezta962n02lmarking 651 sot223 PDF

    2955E

    Abstract: TD 1409
    Contextual Info: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.


    Original
    mmft2955e2955etd 1409 PDF

    2955E

    Abstract: equivalent transistor 2955e microdot assembly instructions AN569 MMFT2955E MMFT2955ET1 MMFT2955ET1G MMFT2955ET3
    Contextual Info: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.


    Original
    mmft2955eot-223mmft2955e/d2955e+6equivalent transistor 2955emicrodot assembly instructionsan569mmft2955et1mmft2955et1gmmft2955et3 PDF

    2955e

    Abstract: equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control Power MOSFET 12 Amps, 60 Volts p-Channel h 2n3904 MARKING QG 6 PIN PWM techniques to-261
    Contextual Info: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.


    Original
    mmft2955eot-223mmft2955e/d2955e+9equivalent transistor 2955edc motor forward reverse controlc source code motor speedcircuit motor forward reverse controlpower mosfet 12 amps, 60 volts p-channelh 2n3904marking qg 6 pinpwm techniquesto-261 PDF