290UA Search Results
290UA Price and Stock
Vishay Intertechnologies 593D106X9020B2TE3Tantalum Capacitors - Solid SMD 10uF 20volts 10% B case Molded |
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593D106X9020B2TE3 | Reel | 4,000 | 2,000 |
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Vishay Intertechnologies 595D685X0050C2TTantalum Capacitors - Solid SMD 6.8uF 50volts 20% C case Conformal |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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595D685X0050C2T | Reel | 500 | 500 |
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ROHM Semiconductor BD9E302EFJ-E2Switching Voltage Regulators 7-28V 3A Int MOSFET Buck DC/DC Conv IC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BD9E302EFJ-E2 | Reel | 2,500 |
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Vishay Intertechnologies MAL204217229E3Aluminum Electrolytic Capacitors - Axial Leaded 22uF 450V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MAL204217229E3 | Bulk | 800 |
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Vishay Intertechnologies 595D685X0020B2TTantalum Capacitors - Solid SMD 6.8uF 20volts 20% B case Conformal |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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595D685X0020B2T | Reel | 2,000 |
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290UA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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tim8996-30
Abstract: 7-AA03A
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tim8996-307-aa03a | |
725uA
Abstract: DIODE e2l
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emc1423/emc1424emc1423emc1424mo-10-tssop-3x3+3 | |
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Contextual Info: DATA SHEET LND-MA32 32 Channel High Voltage Amplifier Call Factory for Fewer Channels GENERAL DESCRIPTION The MA32 is a precision 32 channel high voltage driver for capacitive loads such as micro electromechanical systems (MEMS). The gain of each high voltage driver is internally set for 50 |
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lnd-ma32290ua | |
cf 455
Abstract: MDT10P23
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mdt10p23and8014-bitcf 455 | |
nand02 TSOP48
Abstract: PC28F128P33 B549 transistor b549 epson stylus r230 mk4032gax MT46V32M16 NAND02GW3B2CN6E HX1188 EPSON stylus C87
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adsp-bf548nand02 tsop48pc28f128p33b549+7 | |
TS-1000-OAM
Abstract: MIC79110 TS-1000 digital ts receiver MIC2295 MIC2590B MIC2591B KS8993F micrel tx battery 3v
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mic2591b/mic2592bmic2590b/mic2593mic259xmic2590b+7 | |
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Contextual Info: 56F8036 Data Sheet Preliminary Technical Data 56F8000 16-bit Digital Signal Controllers MC56F8036 Rev. 0 09/2006 freescale.com Document Revision History Version History Rev. 0 Description of Change • Initial public release. Please see http://www.freescale.com for the most current Data Sheet revision. |
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56f803656f800016-bitmc56f8036+4 | |
TIM1314-30LContextual Info: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz LOW INTERMODULATION DISTORTION |
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tim1314-30l75ghz-25dbc7-aa03a | |
200H
Abstract: MDT10P22 1k BIT WORD STATIC RAM
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mdt10p22and8014-bit200h+1 | |
56F8025
Abstract: 56800E 56F8000 DSP56800E MC56F8025
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56f802556f800016-bitmc56f8025+4 | |
TB018
Abstract: MC56F8037 ta313 12-pulse inverter applications 4kb2 56f8000 peripheral reference manual digital control engineering data sheet with basic MC56F80XXRM MC7812CP TA317
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56f8037/56f802756f800016-bitmc56f8037+11 | |
fa5528
Abstract: FA5527 Zener Diode 3v 400mW 5538 60K3r 5528 pwm FA5538
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fa5526/5527/5528/5536/5537/5538fa5526/5527/5528fa5536/5537/5538an-087e+8 | |
2N3904
Abstract: MSOP-10
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emc1423/emc1424emc1423emc1424mo-10-tssop-3x3+3 | |
2SK3582TVContextual Info: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range |
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2sk3582tv | |
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Contextual Info: Vega Series 450 to 900W Multiple Output Modular Power Supply Features 1-10 Wide Range Outputs With Adjustment Forward/Reverse/Low Noise/System Air Cooling Output Voltages From 0.5V - 62V 48VDC Input Option Medical Approval Options MIL-STD-810 Shock and Vibration |
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48vdcmil-std-810en61000-3-247-440hz+1 | |
2SK3582TVContextual Info: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM Lead Pb -free 1.2±0.05 Rating 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C) |
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2sk3582tv | |
GPIOC12
Abstract: 56800E 56F8000 56F8036 DSP56800E MC56F8036 56f8000 BOOTLOADER
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56f803656f800016-bitmc56f8036+6 | |
2N3904
Abstract: MSOP-10
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emc1423/emc1424emc1423emc1424mo-10-tssop-3x3+3 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier |
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2sd6672sd667l-x-t9n-b2sd667g-x-t9n-b2sd667l-x-t9n-k+3 | |
BF250
Abstract: x4b2 OPA603 kf016f p16hc RB50 016f
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opa603x160maxp16hcp16hc+8 | |
mc56f8035v
Abstract: 56F8025 MC56F8035 56f8035 56F8000 MC56F8025
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56f8035/56f802556f800016-bitmc56f8025+6 | |
56800E
Abstract: 56F8000 56F8036 DSP56800E MC56F8036 MC56F8036VLF
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56f803656f800016-bitmc56f8036+5 | |
56F802XContextual Info: 56F8036 Data Sheet Preliminary Technical Data 56F8000 16-bit Digital Signal Controllers MC56F8036 Rev. 1 11/2006 freescale.com Document Revision History Version History Description of Change Rev. 0 Initial public release. Rev. 1 • In Table 10-4, added an entry for flash data retention with less than 100 program/erase |
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56f803656f800016-bitmc56f8036+3 | |
mc56f8036Contextual Info: 56F8036 Data Sheet Preliminary Technical Data 56F8000 16-bit Digital Signal Controllers MC56F8036 Rev. 2 12/2006 freescale.com Document Revision History Version History Description of Change Rev. 0 Initial public release. Rev. 1 • In Table 10-4, added an entry for flash data retention with less than 100 program/erase |
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56f803656f800016-bitmc56f8036+2 | |