28V 30MHZ Search Results

Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)

2SC2510

Abstract: 2sc2510 transistor application
Contextual Info: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)

2sc1764

Contextual Info: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)

E5OU

Abstract: 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555
Contextual Info: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)

Ferrite core TDK

Abstract: 2sc2510
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 '30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE Unit in mm FEATURES: . Specified 28V, 28MHz Characteristics : Output Power : P o =150Wp e P : Minimum Gain : Gpe=12.2dB : Efficiency : ^c=35%(Min.)

2SC2510A

Abstract: 2sc2510 transistor application 2SC2510
Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)

2SC2510

Contextual Info: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.)

2SC2510

Abstract: 2SC2510A
Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)

Contextual Info: 2SC2510 TO SHIBA 2 S C2 5 1 0 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)

toshiba 2SC1763

Abstract: 2-13B1A 2SC1763 7C40 22af 12ID 1S1555 20ID
Contextual Info: T O S H I B A -CDISCRETE/0PT03- 9097250 TOSHIBA Tb 0D074Sfl CDISC R ET E/ OP TO SILICON NPN E PIT A X IA L PLANAR T Y P E _ 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE) Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics

74l00

Abstract: 2SC1764 12ID 1S1555 20ID 80WpeP
Contextual Info: TOSHIBA {D IS CRETE/ OPTO } 909 7 2 5 0 TO SHIBA DE DDDTMtD O I CD IS C R E T E / O P T O SI LICON NPN E P IT A X IA L P L A N A R TYPE Unit in mm 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE) FEATURES : • Specified 28V, 28MHz Characteristics

NTE471

Contextual Info: NTE471 Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and

NTE471

Abstract: Electronic ballast 100W
Contextual Info: NTE471 Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and

MRF428

Contextual Info: MRF428 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

MRF421

Abstract: transistor npn 100w amplifier CASE-211-11 MRF421 rf amplifier 100w npn 28v 100w amplifier
Contextual Info: MRF421 The RF Line NPN Silicon Power Transistor 100W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • • • Product Image Specified 12.5 V, 30 MHz characteristics —

2SC1764

Abstract: 12ID 1S1555 20ID 2-13B1A 213B1 5RL50A
Contextual Info: TOSHIBA -CDISCRETE/OPTO} 9097250 TO SH IBA "Üb DE | ciDc|?2SD DDGTMbO <DI S C R E T E / O P T O > SILICON NPN EPITAXIAL PLANAR TYPE_ 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 20V SUPPLY VOLTAGE USE Unit in mm FEATURES : Specified 28V, 28MHz Characteristics

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

MRF422

Abstract: 28v 30MHZ MRF422 datasheet 28v 150w 30MHZ
Contextual Info: MRF422 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for applications as a high–power linear amplifier from 2.0 Product Image to 30 MHz. • • • Specified 28 V, 30 MHz characteristics —

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

transformer 0-12v

Contextual Info: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF141

Abstract: 28v 30MHZ MRF141 2204B
Contextual Info: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

mrf138

Abstract: mrf138 datasheet
Contextual Info: MRF138 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES: A S • PG = 17 dB Typ. at 30 W /30MHz

MRF426

Abstract: equivalent transistor rf "30 mhz"
Contextual Info: MRF426 The RF Line NPN Silicon Power Transistor 25W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 05202009 Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • • • • Product Image Specified 28 V, 30 MHz characteristics —

DU28120T

Contextual Info: DU28120T RF Power MOSFET Transistor 120W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power