28F512A Search Results

28F512A

Abstract: 28F512A-12
Contextual Info: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible 28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns ’28F512A-12

TMS28F512A TEXAS INSTRUMENTS

Abstract: TMS28F512A
Contextual Info: 28F512A 524288-BIT FLASH MEMORY SMJS514B - FEBRUARY 1994 - REVISED MARCH 1996 Organization . . . 64K x 8-Bit Flash Memory All Inputs/Outputs TTL-Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time 28F512A-10 100 ns ’28F512A-12 120 ns ’28F512A-15

28F512A

Abstract: AOC121
Contextual Info: ►UNDER DEVELOPMENT S-28F512A CMOS 512K-bit FLASH E2PROM The S-28F512A is a 64K-word x 8-bit 5 V single power supply Flash E2PROM. The memory array is divided into 32 sectors 2K-byte each and data is erased in sector units. Applying 12 V to Vpp terminal erases all the data

Contextual Info: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: FINAL A M D ii 28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: FSNAi- AM D3 28F512A 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ C M O S low power consum ption — 30 mA maximum active current

Contextual Info: AMENDMENT AMDB A m 2 8 F 01 0A Data Sheet 1 9 96 Flash P r o d u c t s D ata B o o k / H a n d b o o k INTRODUCTION This amendment supersedes information regarding the Am 28F010A device in the 1996 Flash Products Data Book/Handbook, PI D 11796D. This document includes

28F512A

Abstract: TMS28F512A TEXAS INSTRUMENTS TMS28F512A
Contextual Info: 28F512A 524288-BIT FLASH MEMORY SMJS514B – FEBRUARY 1994 – REVISED MARCH 1996 D D D D D description The 28F512A Flash memory is a 524 288-bit, programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 10 000 and 1 000 program / erase

28F512A

Abstract: TMS28F512A TEXAS INSTRUMENTS
Contextual Info: 28F512A 65536 BY 8-BIT FLASH MEMORY SMJS514C - FEBRUARY 1994 - REVISED AUGUST 1997 Organization . . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible Vcc Tolerance ±10% Maximum Access /Minimum Cycle Time ’28F512A-10 100 ns ’28F512A-12 120 ns ’28F512A-15

28f512a

Abstract: GE capacitor 28f TMS28F512A TEXAS INSTRUMENTS
Contextual Info: 28F512A 524288-BIT F L A S H M E M O R Y S M JS 514B - FEBRUARY 1 9 9 4 - REVISED MARCH 1996 • O r g an iz a t io n . . . 64K x 8-Bit Flash M e m o r y • All I n p u t s / O u t p u t s T T L - C o m p a t i b l e • V qq Tolerance ±10% PM P A C K A G E

Contextual Info: FINAL A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: a Am28F512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ — No data retention power consumption

29C257

Abstract: gang capacitor pin details 27LV020 27c4000 ST 27C1000 29F040A 29C010A Winbond 29EE011 Xicor 28C010 29F020
Contextual Info: file:///AD63.HTM ADSl/63 U c a q ?^ TI o PRODUCT DATA SHEET p AD63 and AD51 Package Converters for E E PROMs and FLASH etc (PLCC) Product Code ¡Pins on skt Pins on Base ¡Wiring Code Package Base pitch" ¡Miscellaneous AD63 i 32 : 32 j 01 P ; .6 j Clamshell

28f512

Abstract: 27C020 29C257 Winbond 29EE011 AD51 programmer for 29F010 29F040 29f040a 28F010 28F256
Contextual Info: AD51/63 f i l e : / / / A D 6 3 .HTM U 'f cl - ? '/ c GDcnp PRODUCT DATA SHEET Lfb^-Ro! t. / ; ; * fc* I *M « 4 . s - AD63 and AD51 Package Converters for E E PROMs and FLASH etc (PLCC) ¡Product C ode ¡Pins on skt Pins on Base ¡W iring C ode ¡Package ;Base pitch” jM iscellaneous i

PCb board zd lty 2

Abstract: AM29F200TB AM29F1001 micron sram sram book relay book regulator handbook free transistor equivalent book 2sc PM9006 AM29F0169
Contextual Info: Flash Memory Products 1994/1995 Data Book/Handbook Advanced Micro Devices FUTURE ELECTRONICS INC. 5935 Airport Road, Suite 200 Mississauga, Ontario L4V1W5 TEL.: 416 612-9200 FAX: (416) 612-9185 T O L L F R E E 1 -8 0 0 -2 6 8 -7 9 4 8 Flash M e m o ry P ro d u cts

DG33 transistor

Contextual Info: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time

Contextual Info: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current

Contextual Info: AMDÍ1 FINAL Am28F256A 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: FINAL A M D ii 28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current

Device-List

Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: 28F512A 524288-BIT FLASH MEMORY SMJS514A - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 64K x 8-Blt Flash Memory All Inputs/Outputs TTL Compatible Vcc Tolerance ±10% Maximum Access / Minimum Cycle Time ’28F512A-10 100 ns ’28F512A-12 120 ns