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onsemi FDB28N30TM Power MOSFET N-Channel UniFETTM 300V 28A 129mΩ D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FDB28N30TM		800			1 - 10 - 100 - 1000 $1.09 10000 $1.05	Buy Now
Newark ()	FDB28N30TM	Cut Tape	289		1	1 $3.73 10 $3.73 100 $1.88 1000 $1.77 10000 $1.69	Buy Now
	FDB28N30TM	Tape & Reel	289		100	1 - 10 - 100 $1.88 1000 $1.77 10000 $1.69	Buy Now
	FDB28N30TM	Cut Tape			800	1 - 10 - 100 - 1000 $1.61 10000 $1.61	Buy Now
	FDB28N30TM	Tape & Reel			800	1 - 10 - 100 - 1000 $1.42 10000 $1.27	Buy Now
TME	FDB28N30TM		88		1	1 $3.01 10 $1.90 100 $1.23 1000 $1.19 10000 $1.19	Buy Now
Ameya Holding Limited	FDB28N30TM		13,700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	FDB28N30TM				800	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Asia	FDB28N30TM			15 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDB28N30TM			12 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDB28N30TM			13 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wuhan P&S	FDB28N30TM		12,800		1	1 $2.47 10 $2.47 100 $1.58 1000 $1.20 10000 $1.20	Buy Now
Panasonic Electronic Components EXB-28N304JX 0804 Resistor Array Convex Type Rohs Compliant: Yes \|Panasonic EXB-28N304JX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	EXB-28N304JX					1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Panasonic Electronic Components EXB-28N300JX 0804 Resistor Array Convex Type / 7 Inch Reel 30 Ohm 5% Halogen Free Type
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	EXB-28N300JX					1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Panasonic Electronic Components EXB-28N303JX 0804 Resistor Array Convex Type Rohs Compliant: Yes \|Panasonic EXB-28N303JX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	EXB-28N303JX					1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Panasonic Electronic Components EXB-28N302JX 0804 Resistor Array Convex Type Rohs Compliant: Yes \|Panasonic EXB-28N302JX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	EXB-28N302JX					1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now

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28N30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: ÖIXYS HiPerFAST IGBT IXGH 28N30B IXGT 28N30B 300 56 2.1 55 V CES ^C25 V CE sat typ t fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 300 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 300 V v GES Continuous	OCR Scan	28n30b	PDF
28N30 Contextual Info: r i T v v < v HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ ^fi(typ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ 300 V v GES	OCR Scan	28n30 o-268 o-247	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90	Original	28n30b o-247 o-268 o-268aa	PDF
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	30n30 28n30 4qn30 31n60 +1238n60 41n60 60n60 200n60 25n100a 7n60b 65a3 40n60a ixga 12n60c ixgh 1500 ixg igbt ixgh	PDF
28N30 Contextual Info: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient	Original	28n30 o-268 o-247 o-268aa	PDF
28N30B Contextual Info: DIXYS IXGH 28N30B IXGT 28N30B HIPerFAST IGBT VCES ^C25 V CE sat typ trfi(typ,i /K • Symbol ~ 300 56 2.1 55 V A V ns TO-247 AD Test Conditions : 25° C to 150=C V CES v OCR T, V Continuous =2 5 ° C to 150°C; R . 1 MO (TAB) Transient T c = 2 5 °C ^C90	OCR Scan	28n30b o-247 o-268	PDF
28N30 Contextual Info: ÖIXYS HiPerFAST IGBT IXGH 28N30 IXGT 28N30 V CES ^C2 V C E s a t ty p t fi(typ) 300 V 56 A 1.6 V 180 ns P re lim in a ry d ata sheet Symbol Test Conditions TO-247 AD T, = 25° C to 150° C 300 V T.J = 25° C to 150° C: RG „t = 1 MQ 300 V Continuous	OCR Scan	28n30 o-247 o-268	PDF
28n30a Contextual Info: niXYS HIPerFAST“ IGBT IXGH 28N30A IXGT 28N30A CES ^C25 V CE sat typ t fi(typ) 300 56 1.85 120 V A V ns P re lim in a ry data sh ee t i f Maximum Ratings Symbol Test Conditions V CES T, =25°C to 150°C 300 V Tj = 25° C to 150° C; RGE= 1 M£i 300 V V GES	OCR Scan	28n30a o-247 o-268	PDF
752 smd Contextual Info: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = = IC25 VCE sat typ = tfi(typ) = 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES	Original	28n30a o-247 o-268 o-268aa +1752 smd	PDF
28N30 Contextual Info: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = = = = 300 V 56 A 1.6 V 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous	Original	28n30 o-268 o-247	PDF
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	o-220 o-263 o-247 28n30 +1630n30 40n30 2n100 8n100 6n100 12n10q 120n60b 40n30bd1 32n50 7n60c 20n60bu1 40n60a b-2160 200n60 12n60c ixgh24n50b	PDF
Contextual Info: H flHVwÎ Y A- Y ^JL sIk»!? HiPerFAST IGBT IXGH 28N30B IXGT 28N30B V CES 300 56 2.1 55 ^C25 V CE sat typ t'fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ	OCR Scan	28n30b o-247 o-268 applica193	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = IC25 = VCE sat typ = = tfi(typ) 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES	Original	28n30a o-247 o-268aa	PDF
12n60c Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60 Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM	Original	o-220 o-263 o-247 plus247 +15o-268 isoplus247tm o-264 20n30 28n30 30n30 12n60c 60n60 igbt diode b242 31n60 ixgk50n60bu1 50n60bd1 diode 12 b2 120n60 60n60	PDF

Contextual Info: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V	Original	28n30 o-268 o-247 o-268aa	PDF
ad 161 Contextual Info: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90	Original	28n30b o-268 o-247 o-268aa +1ad 161	PDF
HM5118165J6 Contextual Info: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 \|im CMOS technology for high performance and low power. The H M 5118165 offers	OCR Scan	hm5118165 1048576-word 16-bit ade-203-636b +5576-word 42-pin 50-pin ns/60 hm5118165j6	PDF
ajw smd Abstract: SMD ajw Contextual Info: □ IXYS PRELIMINARY DATA SHEET 28N30 28N30S HiPerFAST IGBT Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v Transient ±30 V GEM ^C25 Tc = 25°C	OCR Scan	ixgh28n30 ixgh28n30s 13/10nm/lb o-247 +3conditi47 ajw smd smd ajw	PDF
Contextual Info: OIXYS PRELIMINARY DATA SHEET 28N30A 28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C	OCR Scan	ixgh28n30a ixgh28n30as o-247 28n30as	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	plus247 20n30 28n30 30n30 +1540n30 31n60 38n60 41n60 60n60 o-264 200n60 n60c 50n60 7n60b ic igbt 25n120 ic600 80n60 60n60 igbt 25n120	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	axc-051 axc-053 axc-101 axc-102 +16axl-001 axl-051 axv-102 142-12io8 142-16io8 19-08ho1 7n60b 35n120u1 ixys dsei 45-12a dsdi 35-12a 20n80 80n06 80n60 vvy 40-16io1 ixys cs 2-12 ixfx 44n80	PDF
SMD ajw Abstract: ajw smd ajw 35 Contextual Info: □ IXYS PRELIM IN ARY DATA SHEET 28N30A 28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C	OCR Scan	ixgh28n30a ixgh28n30as 13/10nm/lb o-247 +3smd ajw ajw smd ajw 35	PDF
Contextual Info: OIXYS PRELIMINARY DATA SHEET 28N30 28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C	OCR Scan	ixgh28n30 ixgh28n30s tq-247 28n30s +1o-247	PDF
Contextual Info: O IX Y S PRELIMINARY DATA SHEET 28N30B 28N30BS HiPerFAST IGBT vCES ^C25 vCE sat typ *fl(typ) Symbol Test Conditions V CES T j = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V Tc = 25° C	OCR Scan	ixgh28n30b ixgh28n30bs o-247 28n30bs	PDF

28N30 Search Results

28N30 Price and Stock

onsemi FDB28N30TM

Panasonic Electronic Components EXB-28N304JX

Panasonic Electronic Components EXB-28N300JX

Panasonic Electronic Components EXB-28N303JX

Panasonic Electronic Components EXB-28N302JX

28N30 Datasheets Context Search

28N30

7N60B

28N30

28N30B

28N30

28n30a

752 smd

28N30

120n60b

12n60c

ad 161

HM5118165J6

ajw smd

200n60

7n60b

SMD ajw