28FEB06 Search Results

CTL5239-056-021

Contextual Info: 501-380 Qualification Test Report 28Feb06 Rev A Dual Beam Shunt 1. INTRODUCTION 1.1. Purpose | Testing was performed on the Tyco Electronics Dual Beam Shunt to determine its conformance to the requirements of Product Specification 108-1674 Rev. O. 1.2. Scope

Contextual Info: 108-1674 Product Specification 28Feb06 Rev A Dual Beam Shunt 1. SCOPE 1.1. Content | This specification covers the performance, tests and quality requirements for the Tyco Electronics dual beam shunt connector. This connector is a separable electrical connection device for mating with 2,

Contextual Info: THIS DRAWING IS UNPUBLISHED. 2 3 4 RELEASED FOR PUBLICATION - - ALL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. LOC DIST GP 00 R E V IS IO N S DESCRIPTION E1 A REVISED PER E C Q -0 5 -0 0 9 2 8 6 28FEB06 10.16 [.4 00 ] MA X CABLE DIA 11.18

Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive

SI7456DDP-T1-GE3

Abstract: 2285b
Contextual Info: New Product Si7456DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) () Max. 0.023 at VGS = 10 V 27.8 100 0.024 at VGS = 7.5 V 27.2 0.031 at VGS = 4.5 V 24 Qg (Typ.) 9.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm

Contextual Info: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification

Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET

SiR460D

Abstract: SiR460DP siR460
Contextual Info: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET

SI7288

Contextual Info: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

SIR662

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View

SiR826DP

Contextual Info: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server

sir158

Contextual Info: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

si7272

Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized

Contextual Info: Si7463DP Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0092 at VGS = - 10 V - 18.6 0.014 at VGS = - 4.5 V - 15 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

2.54mm Male locking header

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 MAX TEMPERATURE: 220°C 10 S COLOR: BEIGE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 2.54MM A

Si7454DDP

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

sir878

Abstract: SIR878ADP vishay siliconix 1999
Contextual Info: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

2.54mm Male locking header

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 MAX TEMPERATURE: 220°C 10 S COLOR: BEIGE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 2.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL