SI7272DP Search Results
SI7272DP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI7272DP-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 25A 8-SOIC | Original | 9 |
SI7272DP Price and Stock
Vishay Intertechnologies SI7272DP-T1-GE3Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7272DP-T1-GE3 | 55 | 11 |
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SI7272DP-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SI7272DP-T1-GE3 | Cut Strips | 55 | 52 Weeks | 1 |
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SI7272DP-T1-GE3 | Tape & Reel | 12,000 | 3,000 |
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| SI7272DP-T1-GE3 | Cut Tape | 3,594 | 5 |
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| SI7272DP-T1-GE3 | Tape & Reel | 3,594 | 100 |
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| SI7272DP-T1-GE3 | Tape & Reel | 3,000 |
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| SI7272DP-T1-GE3 | Cut Tape | 1 |
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SI7272DP-T1-GE3 | Reel | 3,000 |
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SI7272DP-T1-GE3 | 403 |
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SI7272DP-T1-GE3 | 3,000 |
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SI7272DP-T1-GE3 | 53 Weeks | 3,000 |
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Vishay Siliconix SI7272DP-T1-GE3POWER FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 0.0093OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7272DP-T1-GE3 | 2,711 |
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| SI7272DP-T1-GE3 | 87 |
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Vishay Huntington SI7272DP-T1-GE3MOSFET 2N-CH 30V 25A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7272DP-T1-GE3 | 50,968 |
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SI7272DP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
si7272Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized |
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si7272dpsi7272dp-t1-ge32011/65/eu2002/95/ec+2 | |
Si7272DPContextual Info: SPICE Device Model Si7272DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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si7272dp18-jul-08 | |
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Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized |
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si7272dpsi7272dp-t1-ge32002/95/ec2011/65/eu+2 | |
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Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.) 8.2 APPLICATIONS |
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si7272dpsi7272dp-t1-ge318-jul-08 | |
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Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized |
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si7272dpsi7272dp-t1-ge32011/65/eu2002/95/ec+1 | |
SI7272DP-T1-GE3
Abstract: si7272
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si7272dpsi7272dp-t1-ge318-jul-08si7272 | |
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Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized |
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si7272dpsi7272dp-t1-ge32002/95/ec2011/65/eu+2 | |
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Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized |
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si7272dpsi7272dp-t1-ge311-mar-11 | |
spice datasheet 7806
Abstract: AN609 77569 3-4190
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si7272dpan60904-nov-08spice datasheet 7806+2 | |
4020 timer icContextual Info: LTC4020 55V Buck-Boost Multi-Chemistry Battery Charger Features Description Wide Voltage Range: 4.5V to 55V Input, Up to 55V Output 60V Absolute Maximums n Synchronous Buck-Boost DC/DC Controller n Li-Ion and Lead-Acid Charge Algorithms n ±0.5% Float Voltage Accuracy |
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ltc4020ltc4008qfn-20ltc4012+7 | |
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Contextual Info: LTC4020 55V Buck-Boost Multi-Chemistry Battery Charger Features Description Wide Voltage Range: 4.5V to 55V Input, Up to 55V Output 60V Absolute Maximums n Synchronous Buck-Boost DC/DC Controller n Li-Ion and Lead-Acid Charge Algorithms n ±0.5% Float Voltage Accuracy |
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ltc4020ltc4008qfn-20ltc4012+6 | |
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Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating |
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vmn-pt0105-1007 | |
Lead-Acid 6VContextual Info: LTC4020 55V Buck-Boost Multi-Chemistry Battery Charger Features Description Wide Voltage Range: 4.5V to 55V Input, Up to 55V Output 60V Absolute Maximums n Synchronous Buck-Boost DC/DC Controller n Li-Ion and Lead-Acid Charge Algorithms n ±0.5% Float Voltage Accuracy |
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ltc4020ltc4008qfn-20ltc4012+7 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 | |
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Contextual Info: LTC4020 55V Buck-Boost Multi-Chemistry Battery Charger Features Description Wide Voltage Range: 4.5V to 55V Input, Up to 55V Output 60V Absolute Maximums n Synchronous Buck-Boost DC/DC Controller n Li-Ion and Lead-Acid Charge Algorithms n ±0.5% Float Voltage Accuracy |
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ltc4020ltc4008qfn-20ltc4012+6 | |