SIR662DP Search Results

SIR662

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View

sir662dp

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •

Contextual Info: SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • • • • S 2

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View

Contextual Info: SiR662DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a 60 60 60 RDS(on) () 0.0027 at VGS = 10 V 0.0033 at VGS = 6 V 0.0048 at VGS = 4.5 V 60 Qg (TYP.) • TrenchFET Power MOSFET • 100 % Rg and UIS tested

Contextual Info: SiR662DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

67570

Contextual Info: SPICE Device Model SiR662DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •

sir662dp

Abstract: 67570
Contextual Info: SPICE Device Model SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •

Contextual Info: SiR662DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (TYP.) 100 27.5 nC 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V • Material categorization: for definitions of compliance please see

PowerPAK 1212-8

Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of

draloric potentiometers cermet 581

Abstract: WISTRON power sequence
Contextual Info: Build Vishay into your Design VISHAY INTERTECHNOLOGY, INC. Corporate Headquarters // 63 Lancaster Avenue Malvern, PA 19355-2120 // United States p: 610.644.1300 // f: 610.296.0657 225289_Vishay_AR_CVR_R1.indd 1-3 ve Di mp Co e rs Di ve www.vishay.com 20 on

Full Material

Contextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, Military, and Space) ミリタリー宇宙） AMS（航空、 衛星/GPS 4

DG9454

Contextual Info: Vishay Intertechnology, Inc. SUPER 12 Featured Products version 3.0 www.vishay.com/landingpage/super12/ver3 S12 Super 12 Featured Products 146 CTI SMD Chip Polarized Aluminum Capacitor High temperature up to + 125 °C , low impedance (down to 35 mΩ), AEC-Q200 qualified

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Contextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, AMS (Avionics, Military, and Space) Military, and Space) Satellites/GPS 4

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in