288MBIT Search Results

K4R571669A-FCK8

Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
Contextual Info: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary

code A106

Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
Contextual Info: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V

TC59LM836DKB

Abstract: TC59LM836DKB-33
Contextual Info: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network

200-ball

Abstract: A79 marking code MN18R1628EF0 samsung resitor
Contextual Info: MN18R1624 8 EF0 MP18R1624(8)EF0 Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Version 1.0 May 2004

a65 1021

Contextual Info: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002)

direct rdram rac

Contextual Info: MD16R1624 8/G AF0 MD18R1624(8/G)AF0 Change History Version 1.0 (April 2002) * First copy. * Based on 1.0 version Rambus 256/288Mbit 32 Bit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(April 2002) 256/288Mbit A-die 32 Bit RIMM Module Datasheet

DRAM material declaration

Contextual Info: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004

MARKING CODE 11gb

Contextual Info: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

TC59LM818DMBI

Abstract: VDDA14
Contextual Info: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network

TC59LM836DKB

Abstract: TC59LM836DKB-30
Contextual Info: TC59LM836DKB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network

Contextual Info: K4R881869A for short channel 1066 MHz Direct RDRAM 288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R881869A for short channel 1066 MHz Direct RDRAM™ Change History Version 1.11( September 2001) - Preliminary

Contextual Info: TC59LM836DKB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network

Contextual Info: TC59LM818DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network

a106 diode

Abstract: code A106 a105 a114 marking A93 transistor marking A21 a105 transistor A116 diode a74 marking code B92 02 diode diode A106
Contextual Info: MD18R3268 G AG0 Preliminary 32 Bit RIMM Module Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 bit RIMM Datasheet Version 0.1 Sept. 2003 Preliminary 32 Bit RIMM® Module MD18R3268(G)AG0

Contextual Info: K4R881869A for short channel 1066 MHz Direct RDRAM 288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R881869A for short channel 1066 MHz Direct RDRAM™ Change History Version 1.11( September 2001) - Preliminary

TC59LM818DMB-33

Abstract: TC59LM818DMB
Contextual Info: TC59LM818DMB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network

marking code b84

Contextual Info: MN18R1624 8 EF0 MP18R1624(8)EF0 Preliminary Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Page 0 Version 0.1 Feb. 2004 MN18R1624(8)EF0 MP18R1624(8)EF0 Preliminary

Contextual Info: K4R571669D K4R881869D for short channel 1066 MHz Direct RDRAM 256/288Mbit RDRAM D-die 512K x 16/18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D K4R881869D for short channel 1066 MHz Direct RDRAM™

Contextual Info: TC59LM836DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DMB is Network

b58 468

Abstract: B58 608
Contextual Info: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004

B83 004

Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.

a80 marking code

Abstract: MN18R3268AF0-CM8 marking A97 b72 voltage regulator marking A99 marking b88 marking code B38 MARKING CODE B82 B100 MN18R3268AF0
Contextual Info: MN18R3268AF0 Revision History Version 1.0 September 2003 - First Copy - Based on the 1.1 ver. (Aug 2002) 288Mbit D-die NexMod Datasheet. Page 0 Version 1.0 Sept. 2003 MN18R3268AF0 (32Mx18)*8pcs NexMod Module based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

A74 marking

Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Contextual Info: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V