27JUN11 Search Results
27JUN11 Datasheets Context Search
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Contextual Info: Si4776DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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si4776dyan6092708u8749m+6 | |
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Contextual Info: VS-UFB250FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 250 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C |
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vs-ufb250fa60ot-2272002/95/ec2011/65/eu+1 | |
VS-UFB250FA60Contextual Info: VS-UFB250FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 250 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C |
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vs-ufb250fa60ot-2272002/95/ec11-mar-11 | |
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Contextual Info: SPICE Device Model SiS332DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sis332dn11-mar-11 | |
1.0213Contextual Info: Si8472DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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si8472dban6096509u6083u+7 | |
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Contextual Info: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based |
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vsmy7850x012011/65/eu2002/95/ec12-mar-12 | |
LCD-016O002FContextual Info: LCD-016O002F www.vishay.com Vishay 16 x 2 Character LCD FEATURES • Type: Character • Display format: 16 x 2 characters • Built-in controller: ST7032 • Duty cycle: 1/16 • Bias cycle: 1/5 ST7032 • + 5 V power supply • Compliant to RoHS Directive 2002/95/EC |
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lcd-016o002fst70322002/95/ec2011/65/eu+2 | |
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Contextual Info: JK1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902 |
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2002/95/ec2002/96/ectsop34tsop32+2 | |
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Contextual Info: SQM40P10-40L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sqm40p10-40lan6093391m7367m+3 | |
VSMY7850X01
Abstract: VSMY7850X01-GS08
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vsmy7850x012002/95/ec2011/65/eujs709a+2 | |
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Contextual Info: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based |
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vsmy7850x012011/65/eu2002/95/ec12-mar-12 | |
37931
Abstract: si88
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si8809edban6097275u0825m+8 | |
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Contextual Info: SQM50P04-09L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sqm50p04-09lan6093391m7367m+3 | |
63210Contextual Info: SPICE Device Model Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si3424cdv11-mar-1163210 | |
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Contextual Info: JL1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902 |
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2002/95/ec2002/96/ectsop34tsop32+2 | |
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Contextual Info: SQS462EN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sqs462enan6090740m2890u+6 | |
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Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL 2 P U B L IC A T IO N LOC D IS T R IG H TS AD 00 RESERVED. C O P Y R IG H T REVISIO N S D E S C R IP T IO N G2 1. OPERATING TEMPERATURE: 2. STORAGE 3. CONTACT TIMING: NON-SHORTING. 4. CONTACT |
OCR Scan |
27jun1120vdcdec01 | |
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Contextual Info: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based |
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vsmy7850x0111-mar-11 | |
si23Contextual Info: SPICE Device Model Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si2324ds11-mar-11si23 | |
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Contextual Info: Si1023CX-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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si1023cx-ge3an6091307u4602u+3 | |
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Contextual Info: Si2342DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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si2342dsan6097591u5804m+6 | |
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 60 MHz 10.0 VDC Lower Frequency: Upper Frequency: 110 Tuning Voltage: 0.5 MHz Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +5.0 +8.5 +12.0 dBm 25 mA Pushing: 0.5 MHz/V |
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10khz100khzcvco55cl-0060-011027-jun-11 | |
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Contextual Info: JH1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902 |
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2002/95/ec2002/96/ectsop34tsop32+2 | |