SI2342DS Search Results

si2342

Abstract: SI2342DS
Contextual Info: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21

si2342ds

Abstract: 63302 si2342 SI2342DS-T1-GE3
Contextual Info: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model Si2342DS www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

SI2342DS

Abstract: si23 S12-1321
Contextual Info: SPICE Device Model Si2342DS www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si2342DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 VDS (V) 8 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 • Halogen-free According to IEC 61249-2-21

SI1489EDH

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

SiB914

Abstract: SiA427DJ si2329ds si8802
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS