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    SI4776DY Search Results

    SI4776DY Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4776DY-T1-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 30V 11.9A 8SO Original PDF 209.29KB
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    SI4776DY Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SI4776DY-T1-GE3

    Trans MOSFET N-CH 30V 11.9A 8-Pin SO T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4776DY-T1-GE3 2,814 1
    • 1 $0.75
    • 10 $0.75
    • 100 $0.28
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    Quest Components () SI4776DY-T1-GE3 2,251
    • 1 $1.20
    • 10 $1.20
    • 100 $1.20
    • 1000 $0.48
    • 10000 $0.42
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    SI4776DY-T1-GE3 2,251
    • 1 $1.00
    • 10 $1.00
    • 100 $1.00
    • 1000 $0.26
    • 10000 $0.26
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    SI4776DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4776DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    si4776dyan6092708u8749m+67206m3269u6989m7808m9944m27-jun-11 PDF

    Contextual Info: SPICE Device Model Si4776DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si4776dy11-mar-11 PDF

    Contextual Info: New Product Si4776DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.016 at VGS = 10 V 11.9 0.020 at VGS = 4.5 V 10.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4776dy2002/95/ecsi4776dy-t1-ge32011/65/eu+2js709a02-oct-12 PDF

    si4776

    Contextual Info: New Product Si4776DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.016 at VGS = 10 V 11.9 0.020 at VGS = 4.5 V 10.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4776dy2002/95/ecsi4776dy-t1-ge311-mar-11+1si4776 PDF

    Si4776DY

    Contextual Info: New Product Si4776DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.016 at VGS = 10 V 11.9 0.020 at VGS = 4.5 V 10.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4776dy2002/95/ecsi4776dy-t1-ge311-mar-11 PDF

    si47

    Contextual Info: New Product Si4776DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.016 at VGS = 10 V 11.9 0.020 at VGS = 4.5 V 10.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4776dy2002/95/ecsi4776dy-t1-ge32011/65/eu+212-mar-12si47 PDF

    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes


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    sis778dnsis782dnsis780dnsiz914dt+1vmn-pt0104-1302 PDF

    si4776

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications


    Original
    sir788dpsi7774dpsi7748dpsi7772dp+7si4628dysi4752dysi4774dysi4712dysi4714dysi4776dysi4776 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF