SI47 Search Results

Contextual Info: Si4732CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES D D D D D D D D D D 4.5- to 30-V Operation Under-Voltage Lockout Shoot Through Resistant Fast Switching Times SO-16 Package Driver Impedance—3 W 30-V MOSFETs

Contextual Info: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4776DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Si4435DY

Abstract: Si4710CY
Contextual Info: Si4710CY New Product Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

si4778

Abstract: Si4778DY Si4778DY-T1-E3 64bc30
Contextual Info: New Product Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 rDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V a 8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 5.5 nC APPLICATIONS

Si4705

Abstract: Si4704 a simple fm receiver with pcb layout "FM receiver" simple fm receiver with pcb layout digital TUNING FM RADIO RECEIVER mp3 fm SI4704/05 broadcast fm radio tuner simple fm radio pcb
Contextual Info: Si4704/05 Enhanced Broadcast FM Radio Receiver for Portable Applications Description FM transmit, AM/FM/SW receive, weather band receive and SAME decode, and unparalleled RDS data receivers. The complete solution, including a minimal BOM, requires less than 15 mm2 board area, or less than half that of other

Si47xx

Abstract: Si4735 SI4731 Si473x AM antenna ferrite Si4735-EVB SI4734 rf receiver sensitivity linearity selectivity Si4737 Si4730-DEMO
Contextual Info: Board Layout & Guidelines Using the AM/FM Tuner from Silicon Labs Agenda • Company C overview i • Broadcast audio product portfolio  Si473x block diagram g and technical highlights g g  Design and layout guidelines  Support resources 2 Silicon Labs Company Background

Si4702

Abstract: SI4703-C19-GM si4702-c19-gm Si4701 Si4703-C19 AN231 0x3C04 Silicon Laboratories SI4703 si4702 code format D14-D1
Contextual Info: Si4702/03-C19 B RO A D C A S T F M R A DI O TU N E R FO R P O RTA BL E A PP L I C A T I O N S Features          Ordering Information: See page 38. Pin Assignments Top View Pb-free/RoHS compliant  RDS/RBDS Processor (Si4703)

Contextual Info: Si4740/41/42/43/44/45 Automotive AM/FM Radio Receiver Description Features The Si474x receiver family applies 100% RF CMOS technology to bring digital low-IF radio technology to the automotive receiver market. The Si474x receiver family builds on Silicon Laboratories’ highly successful broadcast

Si4730EY

Abstract: 00823
Contextual Info: Si4730EY New Product Vishay Siliconix Current Sensing MOSFET, N-Channel 30-V D-S PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.015 @ VGS = 10 V 11.7 0.020 @ VGS = 4.5 V 10.1 D SO-8 SENSE 1 8 D KELVIN 2 7 D S 3 6 D G 4 5 D G KELVIN SENSE N-Channel MOSFET

Contextual Info: Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V 8a • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si4724 Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make DESCRIPTION FEATURES The Si4724CY N-Channel synchronous MOSFET with break-before-make BBM is a high speed driver designed to operate in high frequency DC/DC switchmode power supplies. It’s purpose is to simplify the use of N-Channel

Contextual Info: Si4710/11 Broadcast FM Radio Tuner for Portable Applications Description Features The Si4710/11 is the industry's first 100% CMOS FM transmitter single chip IC. The device leverages Silicon Labs’ highly successful and proven Si4700/01 FM receiver, and offers unmatched integration and

Si4736DY

Contextual Info: Si4736DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 13 0.0105 at VGS = 4.5 V 12 • TrenchFET Power MOSFET • LITTLE FOOT® Plus Schottky • Shoot-Thru-Free

Contextual Info: Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V 8a • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4724 Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make DESCRIPTION FEATURES The Si4724CY N-Channel synchronous MOSFET with break-before-make BBM is a high speed driver designed to operate in high frequency DC/DC switchmode power supplies. It’s purpose is to simplify the use of N-Channel

Si4736DY

Abstract: Si4736DY-T1-E3
Contextual Info: Si4736DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0095 at VGS = 10 V 13 0.0105 at VGS = 4.5 V 12 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V at 3.0 A

Si4768CY

Contextual Info: Si4768CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES APPLICATIONS D D D D D D D D D D D Power Supplies - Computer Auxillary - Notebook, Tablet, Desktop, Server - Point-Of-Load - Multiphase 0- to 30-V Operation

Si4701BDY

Abstract: Si4701BDY-T1-E3
Contextual Info: New Product Si4701BDY Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (Ω) ID (A) 0.015 at VGS2 = 10 V 7.0 0.021 at VGS2 = 4.5 V 6.0 RoHS 5, 6, 7 3, 4 VIN S2 COMPLIANT Q2 SO-8 8 S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5

Si4702DY-T1

Abstract: Si4702DY S-31874 BUS34 25C312
Contextual Info: Si4702DY Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (W) ID (A) 0.024 @ VGS2 = 10 V 5.5 0.035 @ VGS2 = 4.5 V 4.5 5, 6, 7 3, 4 VIN SO-8 S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5 VIN VHV VON/OFF S2 Q2 8 Q1 2 1 Top View

Bi-Directional P-Channel mosfet

Abstract: si4720cy Si4435DY Si4720
Contextual Info: Si4720CY Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Two Independent Inputs D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

74613

Abstract: 62472 AN609 Si4724CY 147665
Contextual Info: Si4724CY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74612

Abstract: 9613 AN609 Si4720CY
Contextual Info: Si4720CY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].