daewon
Abstract: VDJ044 TRAY MPPO Trays 14 x 20 DAEWON FBGA
Contextual Info: Chapter 5 Trays Fine-Pitch Ball Grid Array: NLD 044, VDE 044, VDJ 044 3648 \ f28384b \ 8.1.7 Notes: See next page for detailed views 1 All dimensions are in millimeters. Packages and Packing Methodologies Handbook 6 Dec 2007 5-39 Chapter 5 Trays Fine-Pitch Ball Grid Array: NLD 044, VDE 044, VDJ044
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2n2222 itt
Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51
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ME1120
Abstract: BC208C BC208 BC208A bsy90 2N1893 Transistor BC209C BC113 BC208 transistor 31369R
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches M e tal can TO-39 V c b o u p to 120V. Ic up to 7 50 m A . P T O T ” 8 0 0 m W @ 2 5 'C . O u tlin e D ra w in g N o . 66 a p p lie s. REFEREN CE T A B L E C h a ra cte ris tics @
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BC119
Abstract: 2N1613 fairchild BSY90 BSX20 NPN TRANSISTORS LIST 2N915 itt 2222 bfr36 2N2369A 2N914
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silicon High Speed Saturated Switching Transistors Metal Can T O IS R E FE R E N C E T A B L E For medium speed - see General P u rp ose Section. C H A R A C T E R I S T I C S @ 25"C
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BSY87
Abstract: BSY90 1133B 1128G 2n2388 1136G BSY56 BSY51 BSY54 BSY55
Contextual Info: ITT Sem iconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h ara cte ristics @ M ax . rating«
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2N2222A itt
Abstract: itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild 2N2369A 2N914
Contextual Info: Fairchild Semiconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C
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BU102
Abstract: BDX23 bd663 BD663B BDX61 BSY51 BD142 BDX23/40636 BDX71 BC117
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ 25'C Max. rating«
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BFR97
Abstract: sgs-ates BSY87 BSY90 1128G BSY88 BFY72 2N1613 2N1711 BSY51
Contextual Info: ITT Semiconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h a ra c te ristic s @
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