26N60 Search Results
26N60 Price and Stock
Vishay Siliconix SIHH26N60E-T1-GE3MOSFET N-CH 600V 25A PPAK 8 X 8 |
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SIHH26N60E-T1-GE3 | Digi-Reel | 5,564 | 1 |
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STMicroelectronics STL26N60DM6MOSFET N-CH 600V 15A PWRFLAT HV |
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STL26N60DM6 | Digi-Reel | 2,967 | 1 |
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STL26N60DM6 | Reel | 14 Weeks | 3,000 |
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STL26N60DM6 | 1 |
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STL26N60DM6 | 15 Weeks | 3,000 |
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STL26N60DM6 | 15 Weeks | 3,000 |
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Littelfuse Inc IXFH26N60PMOSFET N-CH 600V 26A TO247AD |
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IXFH26N60P | Tube | 2,322 | 1 |
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STMicroelectronics STFI26N60M2MOSFET N-CH 600V 20A I2PAKFP |
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STFI26N60M2 | Tube | 1,494 | 1 |
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STMicroelectronics STP26N60DM6MOSFET N-CH 600V 18A TO220 |
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STP26N60DM6 | Tube | 1,000 | 1 |
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STP26N60DM6 | Tube | 14 Weeks | 1,000 |
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STP26N60DM6 | 900 |
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STP26N60DM6 | 900 | 1 |
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STP26N60DM6 | 1 |
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STP26N60DM6 | 1,000 | 15 Weeks | 50 |
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STP26N60DM6 | 15 Weeks | 50 |
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26N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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26N60P
Abstract: PLUS220SMD
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26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26N60P PLUS220SMD | |
26n60qContextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings VDSS VDGR |
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26N60Q 247TM O-264 728B1 26n60q | |
26n60
Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49
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26N60/IXFT 26N60 28N60 O-247 26n60 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49 | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60 IXFT 26N60 ID25 RDS on 600 V 26 A 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
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26N60 O-268 O-247 O-268 728B1 123B1 065B1 | |
26N60QContextual Info: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C |
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26N60Q ISOPLUS247TM 247TM E153432 | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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26N60Q 247TM 728B1 | |
26n60
Abstract: 26N60P PLUS220SMD
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26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26n60 26N60P PLUS220SMD | |
max2678Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C |
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26N60P 26N60PS O-247 O-268 PLUS220 max2678 | |
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Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol |
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26N60P 26N60PS O-247 405B2 26N60P PLUS220 | |
DSA003703
Abstract: 26n60
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26N60P 26N60PS O-247 O-268 DSA003703 26n60 | |
26N60P
Abstract: TO-248
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26N60P 26N60PS O-247 O-268 PLUS220 PLUS220SMD TO-248 | |
26N60Q
Abstract: C2770 IXFH26N60Q
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26N60Q O-247 728B1 123B1 728B1 065B1 26N60Q C2770 IXFH26N60Q | |
26N60QContextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V I D25 IDM I AR |
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26N60Q 26N60Q O-247 O-268 O-268 | |
26N60QContextual Info: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 |
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26N60Q 26N60Q O-247 O-268 O-264 O-268 | |
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spf560
Abstract: 26N60Q
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26N60Q ISOPLUS247TM spf560 26N60Q | |
26N60QContextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V |
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26N60Q 26N60Q O-247 O-268 O-268AA | |
26N60
Abstract: 28n60
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26N60/IXFT 26N60 28N60 O-247 O-268AA 28n60 | |
26n60qContextual Info: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM |
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26N60Q O-247 728B1 26n60q | |
26n60
Abstract: 26N60Q k 2134
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26N60Q 247TM O-264 728B1 26n60 26N60Q k 2134 | |
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Contextual Info: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT |
OCR Scan |
26N60/IXFT 26N60 28N60 O-247 | |
5007aContextual Info: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C |
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26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a | |
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Contextual Info: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS |
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16N80P 16N80PS O-247 26N60P 26N60P 26N60PS | |
transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
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ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET | |
12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
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OCR Scan |
ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q | |