260N Search Results

Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

8253/8254

Abstract: md 8243 ITT301 6168 sc 8254 AA lt 8239 signetics B197 B236 B237
Contextual Info: Signetics Integrated C ircuits-Lo w Power Schottky T T L TYPE NO. d e s c r ip t io n STO C K NO. N74LS 260N N 74LS261N IN74LS266N Dual 5 -In p u t NO R Gate M u ltip ly Decoder Quad Exclusive NOR 5S 735A 55 7 3 6 X 5 57 37H O U T L IN E DRW G. NO. 1 2 1 M 74LS273N

Contextual Info: Memory Module Specifications KHX16C10B1B/8 8GB 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)

Contextual Info: Memory Module Specifications KHX13C9B1/8 8GB 1G x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power

Contextual Info: KHX18C10/4 4GB 512M x 64-Bit DDR3-1866 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power 3.480 W*

QOPR-260N03

Abstract: relay
Contextual Info: МИК «КВАЗАР» QOPR-260N03 Оптоэлектронное мощное реле модульного типа Коммутируемое напряжение от 0-30V DC, Коммутируемый ток 260 A Опто электронные реле постоянного тока.

IR 1838 T

Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

Contextual Info: KHX18C10/8 8GB 1G x 64-Bit DDR3-1866 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power 3.924 W*

EM78P259NM

Abstract: em78p259np EM78P259 em78p259n ph57 QFP 128 lead .5mm EM78P260NP 78P26
Contextual Info: EM78P259N/260N 8-Bit Microprocessor with OTP ROM Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. June 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

Contextual Info: Memory Module Specifications KHX16C9K2/16 16GB 8GB 1G x 64-Bit x 2 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin)

Contextual Info: ELM73xxxxxA CMOS 遅延回路 & マニュアルリセット機能付き電圧検出器 •概要 ELM73xxxxxAは遅延機能付きの CMOS 電圧検出器 ICであり、遅延時間は外付けコンデンサで調整可能です。 また、 非常に低い消費電流 Tpy.260nA で動作します。 ELM73xxxBxAシリーズはマニュアルリセット機能付きタイ

LTC6246

Contextual Info: LTC6362 Precision, Low Power Rail-to-Rail Input/Output Differential Op Amp/SAR ADC Driver DESCRIPTION FEATURES n n n n n n n n n n n n n 1mA Supply Current Single 2.8V to 5.25V supply Fully Differential Input and Output 200 V Max Offset Voltage 260nA Max Input Bias Current

EM78P259NM

Abstract: em78p259n EM78P260N ph57 em78p259 PH55 ic 7404 datasheet OP-N LXY Series EM78P258
Contextual Info: EM78P2581N/259N/260N 8-Bit Microprocessor with OTP ROM Product Specification DOC. VERSION 1.3 ELAN MICROELECTRONICS CORP. October 2007 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

Contextual Info: KHX1600C9D3LK2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3L-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power

BLF240

Contextual Info: Casing Type Metal box LF Series Large Current Type Model Rated voltage AC/DC V Rated current AC/DC (A) LF-240 LF-240P LF-250 LF-250P LF-260N LF-240U 250 250 250 250 250 250 40 40 50 50 60 40 TÜV Rheinland Withstanding Insulation resistance Leakage voltage 1 min., 500VDC 1 min.,

lt540

Abstract: N39N
Contextual Info: LTC6362 Precision, Low Power Rail-to-Rail Input/Output Differential Op Amp/SAR ADC Driver DESCRIPTION FEATURES 1mA Supply Current Single 2.8V to 5.25V supply n Fully Differential Input and Output n 200 V Max Offset Voltage n 260nA Max Input Bias Current n Fast Settling: 550ns to 18-Bit, 8V

IR 1838

Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

Contextual Info: KHX18C10T2K2/8 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1866 CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power

km41256 dram

Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D
Contextual Info: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A

DDR3 DIMM SPD JEDEC

Abstract: DDR3 SPD DDR3 1600 spd
Contextual Info: Memory Module Specifications KHX1600C10D3B1K2/16G 16G 8GB 2Rx8 1G x 64-Bit x 2 pcs. DDR3-1600 CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin)

LTC6362

Abstract: lt540 N39N LTC6362I
Contextual Info: LTC6362 Precision, Low Power Rail-to-Rail Input/Output Differential Op Amp/SAR ADC Driver DESCRIPTION FEATURES 1mA Supply Current Single 2.8V to 5.25V supply n Fully Differential Input and Output n 200 V Max Offset Voltage n 260nA Max Input Bias Current n Fast Settling: 550ns to 18-Bit, 8V

Contextual Info: ELM73xxxxxA CMOS Voltage detector with delay circuit and Manual Reset function •General description ELM73xxxxxA is CMOS voltage detector IC with delay function; delay time is adjustable by external capacitor. It operates with very low current consumption; 260nA typ. . The type with Manual Reset function

EM78P259NM

Abstract: EM78P259N/260N
Contextual Info: EM78P259N/260N 8-Bit Microprocessor with OTP ROM Product Specification DOC. VERSION 1.1 ELAN MICROELECTRONICS CORP. May 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

Contextual Info: Memory Module Specifications KHX13C9B1B/8 8GB 1G x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power