25TES Search Results

RJH60F3DPK-00

Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

rjh60f5

Contextual Info: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

RJH1CF5RDPQ-80

Contextual Info: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

rjh60f5

Abstract: RJH60F5DPK REJ03G1836-0100 RJH60F
Contextual Info: Preliminary RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P

RJH60F3

Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0100 Rev.1.00 Nov 09, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package

Silicon N Channel IGBT High Speed Power Switching

Abstract: RJH1CF4RDPQ-80
Contextual Info: Preliminary Datasheet RJH1CF4RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0354EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

Contextual Info: SIEMENS TV-Stereo-Sound TDA6612 Preliminary Data Bipolar IC Features The TDA 6612 represents a complete TV stereo system controlled by the I2C bus according to G er­ man TV Stereo standard. • All functions inclusive matrix adjustment are PC bus controlled

rjh60f5

Abstract: RJH60F5DPQ-A0 RJH60F5D rjh60f5dpq RJH60F rjh60f5dpqa0 PRSS0003ZH-A RJH60 r07ds0326ej
Contextual Info: Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

RJH60F7

Abstract: RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A
Contextual Info: Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power Switching R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Features 1B • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

RJH60F7

Abstract: RJH60F7ADPK RJH60 RJH60F7A R07DS0237EJ0300 rjh60f7adpk-00-t0 RJH60F7ADPK-00 PRSS0004ZE-A SC-65 REJ03G1837-0200
Contextual Info: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

MPX GPF

Abstract: O235 siemens CAPACITOR gpf smd marking KH Stereo MULTIPLEXER smd TDA6610-5 Q67000-A5126 F26-F2S marking f25 ku KH007
Contextual Info: SIEMENS TV-Stereo Processor TDA 6610-5 Bipolar IC Features • All functions are I2C Bus controlled • Suitable for multistandard including NICAM SCARTinterface • Independent headphones output high signal noise ratio • Extremely low total harmonic distortion

Contextual Info: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

RJH60F7

Contextual Info: Preliminary Datasheet RJH60F7DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0328EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package

Contextual Info: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology

Contextual Info: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Contextual Info: Preliminary Datasheet RJH60F6DPQ-A0 600 V - 45 A - IGBT High Speed Power Switching R07DS0327EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

RJH60F7

Abstract: RJH60F7A RJH60F7ADPK REJ03G1837-0200 RJH60 RJH60F RJH60F7ADP PRSS0004ZE-A SC-65
Contextual Info: Preliminary Datasheet RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package

RJH60F5

Abstract: RJH60F5DPK
Contextual Info: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

rjh60f6

Contextual Info: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

RJP60F0DPE

Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology

Rjh60f5

Abstract: RJH60F5DPQ r07ds0326ej
Contextual Info: Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Contextual Info: Preliminary Datasheet RJH60F3DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0391EJ0100 Rev.1.00 May 11, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package