rjh60f5
Contextual Info: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
|
Original
|
rjh60f5dpkr07ds0055ej0300prss0004ze-acurren9044+1rjh60f5
|
PDF
|
rjh60f5
Abstract: RJH60F5DPK REJ03G1836-0100 RJH60F
Contextual Info: Preliminary RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P
|
Original
|
rjh60f5dpkrej03g1836-0100prss0004ze-arjh60f5+1rjh60f
|
PDF
|
RJH60F5
Abstract: RJH60F5DPK
Contextual Info: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
|
Original
|
rjh60f5dpkr07ds0055ej0300prss0004ze-arjh60f5 |
PDF
|
rjh60f5
Abstract: rjh60f5dpk RJH60F5D RJH60F RJH60 R07DS0055EJ0200 PRSS0004ZE-A SC-65
Contextual Info: Preliminary Datasheet RJH60F5DPK R07DS0055EJ0200 Previous: REJ03G1836-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
|
Original
|
rjh60f5dpkr07ds0055ej0200rej03g1836-0100prss0004ze-a+6collec9044rjh60f5rjh60f5drjh60frjh60sc-65
|
PDF
|
RJH60F7
Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
Contextual Info: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units
|
Original
|
rjh608rjh60f0212/100/in-house/lah/jerjh60f7+7control circuit of induction cookerrjh60f5control ic for induction heating cookerrjh60f6rjh60d2rjh60f7dpq-a0rjh1bf7
|
PDF
|
RJH60F7
Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to
|
Original
|
rjp6085dpno-220abrjp6085dpkrjh6085bdpk+13rjh6086bdpkrjh6087bdpkrjh6088bdpkrjh60f7rjh60f5rjh60rjh60f4rjh60f7abcr25krrjh60f6rjh1cf7rjh60d2rjk0652
|
PDF
|
RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
|
Original
|
r07cs0003ej0100rjp63k2rjp63f3rjp30e2+7rjp30h2rjj0319dsprjp63frjp30h3rjj0319bcr1am-12a equivalentrjj0606
|
PDF
|
RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
|
Original
|
r07cs0003ej0200rjj0319dspbcr8pm equivalentrjp30h2+7n0201rjj0319np109n055pujrjk5020rjp30e2dppnp75n04yuglg washing machine circuit diagram
|
PDF
|
rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
|
Original
|
rjp6065rjp6006rjp3053rjh60f5+6transistor smd marking code jgbcr1am-12a equivalentrjh60f7rjp3063triac kt 207 600vrjp6006dpk
|
PDF
|
rjh60f5
Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.
|
Original
|
rej13g0003-2701rjh60f5rjh60f7r2j240+7r2j24020hat2292chat2286chat1146crjh60rjh60d7rjh60f7adpk
|
PDF
|
