25K1 Search Results

Contextual Info: TECHNICAL DATA SHEET High Voltage STRAIGHT JACK Inserts 25K101-200 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Similar to DIN 41626/2 Documents N/A Material and plating RF_35/12.04/3.0 Connector parts Center contact Dielectric

M5207L01

Abstract: M5281AL 155133 2SK118Y m5216al 2SC2458GR M5207 2SA1048GR HEC2392-01-150 M5207L
Contextual Info: IC1A M5207L01 4 INPUT P8 2 Q4 25K1845R C8 0.047µF P7 C7 10pF 3 1 C4 10µ/16V IC1B M5207L01 + JK2 SG-7713 R15 10kΩ C5 1µF/50V + 6 R15 1MΩ R11 10kΩ R7 1MΩ R12 22kΩ D3 155133 10 C6 R9 10µ/16V 10kΩ + 7 9 2 3 8 5 TR-2 TREMOLO PCB ASSY 70901390 Q3

25K120

Abstract: 80 amp 30v npn darlington OA 70 25K200 pmd25k120 PMD25K200
Contextual Info: A LAMBDA SWITCHING POWER DARLINGTONS PMD 25K SERIES 150 WATT 9 AMP CONTINUOUS, 12 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 25K120 P M D 25K150 PM D 25K200 FEATURES • Electrical specifications guaranteed for operating junction temperature range of

Contextual Info: TECHNICAL DATA SHEET High Voltage STRAIGHT JACK Inserts 25K101-200 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Similar to DIN 41626/2 Documents N/A Material and plating RF_35/12.04/3.0 Connector parts Center contact Dielectric

Contextual Info: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage

marking pd

Contextual Info: T O SH IB A 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ360 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1.6MAX

Contextual Info: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: SILICON NPN EPITAXIAL TYPE RN5003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. P O W ER SW ITCH IN G APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

2SA1202

Abstract: 2SC2882
Contextual Info: T O S H IB A 2SA1202 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER AM PLIFIER APPLICATIONS Unit in mm VOLTAGE AM PLIFIER APPLICATIONS 1.6MAX. —I— 4.6MAX. • Suitable for driver of 30~35 Watts Audio Amplifier • P q = 1~2W (Mounted on CeramicSubstrate)

2SJ465

Contextual Info: TOSHIBA 2SJ465 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ465 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX.

RN5003

Abstract: RN6003
Contextual Info: RN5003 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN5003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

LAMBDA Voltage Regulator LAS14AU

Abstract: LAS14AU lambda LAS 14 AU lambda LAS lambda "LAS 14 au" EANAL LAS-1400 as-1405 LAMBDA Voltage Regulator LAS-14AU
Contextual Info: LAMBDA LAS 1400,14AU SERIES 3 AMP POSITIVE VOLTAGE REGULATOR FEATURES • Guaranteed input-output differential: LAS01400/+2.50 volts LAS014AU/+2.30 volts • Guaranteed temperature coefficient: LAS-1400/00 C to +125° C: 0.02% Vo/° C LAS-14AU/00 C to +125° C: 0.02% Vo/° C

2SK3658

Contextual Info: 2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

Contextual Info: MT3S111P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=0.95 dB 標準 (@ f=1 GHz) •

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2SC5713

Contextual Info: 2SC5713 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5713 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.5 A 直流電流増幅率が高い。

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)

2SC5819

Contextual Info: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

2SA1201

Abstract: 2SC2881
Contextual Info: 2SA1201 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1201 ○ 電力増幅用 ○ 励振段増幅用 単位: mm • 高耐圧です。 • トランジション周波数が高い。 : fT = 120 MHz (標準) • 小型フラットパッケージでハイブリッド IC 組立て用に適します。

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)