25DEG. Search Results

L350FC

Abstract: L350FCHC L350FCQC
Contextual Info: American Opto Plus LED MAIN FEATURES: FULL COLOR SMD PRODUCT L-350XC series… WIDE VIEWING AGNLE LOW POWER CONSUMPTION Common ANODE Full Color I.C. COMPATIBLE 3.2X2.7X1.1mm CHIP LED Tape & Reel PACKAGE DIMENSIONS SELECTION GUIDE AND APPLICATION INFORMATION RATINGS AT 25deg.C AMBIENT

IMD3

Abstract: 100DEG M67766B
Contextual Info: M67766B IMD3,5,7 vs. Po IMD3 +25deg.C IMD5(+25deg.C) IMD7(+25deg.C) IMD3(-30deg.C) IMD5(-30deg.C) IMD7(-30deg.C) IMD3(+100deg.C) IMD5(+100deg.C) IMD7(+100deg.C) -5 -10 -15 IMD (dBc) -20 -25 -30 -35 -40

flammable

Abstract: RA45H4045MR
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING MITSUBISHI RF POWER MODULE Revision date: 22nd/Jan. ‘02 ELETROSTATIC SENSITIVE DEVICES R A 45H 4045M R Silicon MOS FET Power Amplifier, 400-450MHz 45W MOBILE RADIO MAXIMUM RATINGS Tc=25deg.C UNLESS OTHERWISE NOTED

NLK1U5FAAA

Abstract: nel nlk1u5faaa
Contextual Info: NEL Laser Diodes May2005 NLK1U5FAAA 1650 nm DFB laser diode in a butterfly-type 14 pin package with thermo-electric cooler. Pigtail fiber is connectorized with an FC/PC connector. FEATURES * Wavelength Range * Fiber Output Power 1650nm 15mW ABSOLUTE MAXIMUM RATINGS Tsub=25deg.C

Contextual Info: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5190 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 600 Volts MAX. OUTPUT CURRENT IO 3.0 @25deg.C Amps MAX JUNCTION TEMPERATURE

Contextual Info: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5186 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 100 Volts MAX. OUTPUT CURRENT IO 3.0 @25deg.C Amps MAX JUNCTION TEMPERATURE

Contextual Info: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5187 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 200 Volts MAX. OUTPUT CURRENT IO 3.0 @25deg.C Amps MAX JUNCTION TEMPERATURE

Contextual Info: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5188 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 400 Volts MAX. OUTPUT CURRENT IO 3.0 @25deg.C Amps MAX JUNCTION TEMPERATURE

icc3

Abstract: M57788SH 3125V m577
Contextual Info: Graph f-Po M57788SH Pout,Icc vs. freq. 12 Vcc1,2,3=12.5V, Pin=0.3W, Tc=+25deg.C Zg=Zl=50ohm 50 Po W Icc1 (A) Icc2 (A) Icc3 (A) Pout (W) 40 11 10 9 8 7 30 6 5 20 4 3 2 10 1 460 470 480 490 500 freq.(MHz) -1- 510 520 530 540 Icc1/Icc2/Icc3 (A) 60 Graph Pin-Po(fL)

RA03M8087M

Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA03M8087M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 806-870MHz 3.6W PORTABLE RADIO MAXIMUM RATINGS Tc=25deg.C UNLESS OTHERWISE NOTED SYMBOL PARAMETER CONDITIONS

CGR18650CG

Abstract: Panasonic CGR18650CG CGR18650C CGR18650 110mA 250mah panasonic lithium battery cell 3.6V
Contextual Info: PSS series CGR18650CG • Dimensions ■ Typical discharge characteristics （mm） Max. 18.6 5.0 CHARGE CONDITION :CVCC 4.2V MAX.0.7It 1500mA , 110mA cut-off at 25deg.C DISCHARGE CONDITION : CONSTANT CURRENT , 3.0V cut-off at 25deg.C VOLTAGE [V] 4.5 （＋）

peltier

Abstract: vdr10
Contextual Info: NEL Laser Diodes July2005 NLK1B5JAAA 1310 nm DFB laser diode in a butterfly-type 14 pin package with thermo-electric cooler. Pigtail fiber is connectorized with an FC/PC connector. FEATURES * Wavelength Range * Fiber Output Power 1310 nm 40mW ABSOLUTE MAXIMUM RATINGS Tsub=25deg.C

RA07M4045M

Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA07M4045M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE RADIO MAXIMUM RATINGS SYMBOL V dd Vgg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)

MDR081B

Contextual Info: MDR081B 1.2GHz DSTV 1st IF BPF Characteristics MDR081B Zin/Zout 50 ohm Nominal Fc 1200MHz Nominal Pass Band 950-1450MHz Insertion Loss 2.0 dB max 950-1450MHz at 25 Deg.C 2.3 dB max (950-1450MHz at -40 up to +85 Deg.C) Ripple 1.5 dB max (950-1450MHz at +25Deg.C)

RA08H1317M

Contextual Info: ATTENTION MITSUBISHI RF POW ER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE RA08H1317M DEVICES Silicon MOS FET Power Amplifier, 135-175MHz 8W PORTABLE RADIO MAXIMUM RATINGS Tc=25deg.C UNLESS OTHERWISE NOTED SYMBOL PARAMETER CONDITIONS SUPPLY VOLTAGE

Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR H ANDLING ELETROSTATIC SENSITIVE DEVICES RA20H8087M Silicon MOS FET Power Am plifier 806-825 I 851-870MHz 20W MOBILE RADIO OUTLINE DRAWING MAXIMUM RATINGS SYMBOL V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)

f240l

Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H2127M Silicon MOS FET Power Amplifier, 210-270MHz 30W MOBILE RADIO MAXIMUM RATINGS SYMBOL V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)

icc3

Abstract: M57788UH 3125V M5778 M57788
Contextual Info: Graph f-Po M57788UH Pout,Icc vs. freq. 12 Po W Icc1 (A) Icc2 (A) Icc3 (A) 50 Vcc1,2,3=12.5V, Pin=0.3W, Tc=+25deg.C Zg=Zl=50ohm Pout (W) 40 11 10 9 8 7 30 6 5 20 4 3 10 2 1 440 450 460 470 480 freq.(MHz) -1- 490 500 510 520 Icc1/Icc2/Icc3 (A) 60 Graph Pin-Po(fL)

flammable

Abstract: RA08N1317M
Contextual Info: ATTENTION MITSUBISHI RF POW ER M ODULE O BSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE RA08N1317M DEVICES Silicon MOS FET Power Amplifier, 135-175MHz 8W PORTABLE RADIO MAXIMUM RATINGS SYM BO L V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C U N LESS OTH ERW ISE NOTED)

C0416137

Contextual Info: C0416137 FEATURES INCLUDE: Conductive Plastic Element Shaft Seal SPECIFICATIONS TA = 25deg.C unless otherwise stated Electrical Resistance Value Tolerance Independent Linearity Error Power Dissipation Effective Rotation Angle 5K +/-10% +/-5% 1 W max. 45 deg.+/-5deg.

BCS1210A1L

Abstract: optical sensors
Contextual Info: Pb Free Optical Sensors [BCS series] TDK CONFIDENTIAL BCS1210A1L Photo acceptance area Vdd +Electrode Vss (-Electrode) 1 0.8 (0.35) (0.55) Shapes and dimension Glass Substrate t=0.6 1.2 (Top view) 0.35 0.3 0.35 (Bottom view) Electrical Characterisic Temperature= 25deg.C

RA35H1516M

Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE O BSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA35H1516M Silicon MOS FET Power Amplifier, 154-162MHz 35W MOBILE RADIO MAXIMUM RATINGS SYMBOL V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)

Contextual Info: ECG738 Linear ICs Chroma Processor Circuit status Nom. Supp V 20 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)75 Package StyleDIP Mounting StyleT Pinout Equivalence Code14-1024 # Pins14 Ckt. (Pinout) NumberLN01401024 DescriptionPd:625mW;Derate:5mW/deg.C above TA=+25Deg.C

LBWA1

Abstract: LBWA1ZZVK7-539 cc3000 WLAN ieee 802.11 murata
Contextual Info: Preliminary Specification Number : SP-ZZVK-C W-LAN Module Data Sheet 802.11b/g module Product Part Number: LBWA1ZZVK7-539 Preliminary & Confidential < Specification may be changed by Murata without notice > Murata Manufacturing Co., Ltd. Preliminary Specification Number: SP-ZZVK-C