IMD3 Search Results

C4493

Contextual Info: Advance Product Information Sept. 1, 2004 5.6 Watt 3.5GHz Packaged HPA TGA2925-EPU-SD Key Features TGA2925 • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 37.5 dBm Nominal Psat Internally Partially Matched IMD3 -50 dBc @ 24 dBm SCL, Typical

Contextual Info: Product Data Sheet September 27, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal

HF250-50

Abstract: ASI10615 250WPEP
Contextual Info: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.550 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. E FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W PEP

HF5-12S

Abstract: ASI10591 HF512S
Contextual Info: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP

TDA9937

Contextual Info: TDA9937: Features • D ual 10-bit resolution • IMD3: 74 dBc; fs = 737.28 Msps; fo = 140 MHz • 750 Msps maximum update rate • ACPR: 64 dBc; 2-carrier WCDMA; fs = 737.28 Msps; fo = 153.6 MHz • Selectable 4x or 8x interpolation filters • Typical 1.2 W power dissipation at 4x

Guide for Common Mode Filter Design Coilcraft

Abstract: 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-8 LTC6401IUD-8 g1318 LT 735
Contextual Info: LTC6401-8 2.2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.2GHz –3dB Bandwidth Fixed Gain of 2.5V/V 8dB –92dBc IMD3 at 70MHz (Equivalent OIP3 = 50dBm)

medical ultrasound

Abstract: ultrasound sonar MAX2034 MAX2034CTM MAX2034CTM-T sonar transmitter
Contextual Info: 19-3969; Rev 1; 3/07 Quad-Channel, Ultra-Low-Noise Amplifier with Digitally Programmable Input Impedance *See the Ultrasound-Specific IMD3 Specification in the Applications Information section. GND GND VCC OUT3- OUT3+ VCC OUT2- OUT2+ GND OUT1- VCC OUT1+ OUT4-

PD57006

Abstract: B10TJ DB-57006-600 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 3214W-1-103E GRM42-6C0G151J50
Contextual Info: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg

MRF466

Abstract: MRF-466
Contextual Info: MRF466 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. B .112 x 45° A E C FEATURES: Ø.125 NOM. FULL R J .125 B • PG = 15 dB min. at 40 W/30 MHz • IMD3 = -30 dBc max. at 40 W PEP

Contextual Info: LTC6420-20 Dual Matched 1.8GHz Differential Amplifiers/ADC Drivers DESCRIPTION FEATURES n n n n n n n n n n n n n n Matched Gain ±0.1dB Matched Phase ±0.1° at 100MHz Channel Separation 80dB at 100MHz 1.8GHz –3dB Bandwidth; Fixed Gain of 10V/V 20dB IMD3 = –84dBc at 100MHz, 2VP-P

Contextual Info: LTC6401-26 1.6GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.6GHz –3dB Bandwidth Fixed Gain of 20V/V 26dB –85dBc IMD3 at 70MHz (Equivalent OIP3 = 46.5dBm)

IMD3

Abstract: 100DEG M67766B
Contextual Info: M67766B IMD3,5,7 vs. Po IMD3 +25deg.C IMD5(+25deg.C) IMD7(+25deg.C) IMD3(-30deg.C) IMD5(-30deg.C) IMD7(-30deg.C) IMD3(+100deg.C) IMD5(+100deg.C) IMD7(+100deg.C) -5 -10 -15 IMD (dBc) -20 -25 -30 -35 -40

MRF428

Contextual Info: MRF428 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF428 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = -30 dBc max. at 150 W PEP • Omnigold Metalization System

BLW97

Abstract: TRANSISTOR blw97 2050F
Contextual Info: BLW97 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW97 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 11.5 dB min. at 175 W/30 MHz • IMD3 = -30 dBc max. at 175 W PEP

power amplifier absolute AD 3600 SCHEMATIC

Abstract: 1000 640114 LTC6401-14 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-14 LTC6401IUD-14
Contextual Info: LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2GHz –3dB Bandwidth Fixed Gain of 5V/V 14dB –91dBc IMD3 at 70MHz (Equivalent OIP3 = 49.3dBm)

zener 20w smd diode 1w

Contextual Info: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg

ltspice transformer

Abstract: Low Bias Current Amplifiers Agilent RF MOSFET QFN
Contextual Info: LTC6401-20 1.3GHz Low Noise, Low Distortion Differential ADC Driver for 140MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.3GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB –93dBc IMD3 at 70MHz (Equivalent OIP3 = 50.5dBm)

Contextual Info: EMD3 / UMD3N / IMD3A Transistors General purpose dual digital transistors EMD3 / UMD3N / IMD3A zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (6) (2) 0.5 0.5 1.0 1.6 EMD3 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA114E chip and DTC114E chip in a EMT

AP601

Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114
Contextual Info: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT

Contextual Info: www.ti.com THS4500 THS4501 – SLOS350 – APRIL 2002 WIDEBAND, LOW-DISTORTION FULLY DIFFERENTIAL AMPLIFIERS FEATURES D Fully Differential Architecture D Bandwidth: 370 MHz D Slew Rate: 2800 V/µs D IMD3: –90 dBc at 30 MHz D OIP3: 49 dBm at 30 MHz D Output Common-Mode Control

Contextual Info: MRF448 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W PEP

Contextual Info: DGN-8 DGK-8 THS4500 THS4501 D-8 www.ti.com SLOS350D − APRIL 2002 − REVISED JANUARY 2004 WIDEBAND, LOWĆDISTORTION FULLY DIFFERENTIAL AMPLIFIERS FEATURES D Fully Differential Architecture D Bandwidth: 370 MHz D Slew Rate: 2800 V/µs D IMD3: −90 dBc at 30 MHz

ASI10612

Abstract: HF150-50F 37ad
Contextual Info: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50F is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W PEP • Omnigold Metalization System FULL R

ASI10596

Abstract: HF50-12F
Contextual Info: HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF50-12F is Designed for FEATURES: B .112 x 45° A E • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 30 W PEP • Omnigold Metalization System C Ø.125 NOM.