B10TJ Search Results

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

PD57006

Abstract: B10TJ DB-57006-600 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 3214W-1-103E GRM42-6C0G151J50
Contextual Info: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg

81c1000

Abstract: ATC100B241JT200XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

zener 20w smd diode 1w

Contextual Info: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg

2225x7r225kt3ab

Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

zener 20w

Abstract: DB-57060S-526 EXCELDRC35C 3214W-1-103E A02TJ B10TJ GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060S
Contextual Info: DB-57060S-526 RF POWER amplifier using 1 x PD57060S N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg

atc 17-25

Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of

ATC100B9R1CT500XT

Abstract: 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS MRF6VP41KHR6 A114
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 4, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6VP41KHR6 MRF6VP41KHSR6 Designed primarily for pulsed wideband applications with frequencies up to

CAPACITOR 33PF

Abstract: zener 20w 3214W-1-103E A02TJ B10TJ DB-57060S-526 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50
Contextual Info: DB-57060S-526 RF POWER amplifier using 1 x PD57060S N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

DB-57060-526

Abstract: transistor 526 zener 20w A02TJ B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060
Contextual Info: DB-57060-526 RF power amplifier using 1 x PD57060 N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg

MRFE6VP61

Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

atc100b270

Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

ATC600F241JT

Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

TDK Ferrite Balun

Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

ATC100B5R6CT500XT

Abstract: ATC100B9R1CT500XT ATC100B241JT200XT MRF6VP41KH MRF6VP41KHR6 NIPPON CAPACITORS UT-141C-25 AN1955 MRF6VP41KHSR6 2225X7R225KT3AB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 5, 4/2010 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to

MRF6VP41KH

Abstract: UT-141C-25 NI-1230 Nippon capacitors date code mrf6vp41kh pcb NIPPON CAPACITORS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 6, 4/2012 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

mrfe6vp61k25h

Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

CAPACITOR 33PF

Abstract: PD55025 capacitor 6r8 zener 20w zener diode 1206 b10tj BZX284C5V1 tl 100b A02TJ EXCELDRC35C
Contextual Info: DB-55025-540 RF power amplifier using 1 x PD55025 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 460 - 540MHz ■ Supply voltage: 13.6V ■ Output power: 20W ■ Gain: 12.5 ± 0.5dB ■ Efficiency: 51% - 66%

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 6, 4/2012 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to