A01TKLC Search Results

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

81c1000

Abstract: ATC100B241JT200XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

2225x7r225kt3ab

Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

transistor B 764

Abstract: ATC600F150JT250XT 0051A
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

TUI-lf-9

Abstract: ATC700B392JT50X
Contextual Info: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched

MRF6VP2600H

Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

MRF6VP2600KH

Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

MRFE6VP61

Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

atc100b270

Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage

TDK Ferrite Balun

Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

ATC100B5R6CT500XT

Abstract: ATC100B9R1CT500XT ATC100B241JT200XT MRF6VP41KH MRF6VP41KHR6 NIPPON CAPACITORS UT-141C-25 AN1955 MRF6VP41KHSR6 2225X7R225KT3AB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 5, 4/2010 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to

MRF6VP41KH

Abstract: UT-141C-25 NI-1230 Nippon capacitors date code mrf6vp41kh pcb NIPPON CAPACITORS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 6, 4/2012 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136