256MBIT NOR FLASH Search Results

XTAL26M

Abstract: flash 16M MC9328MX21RM Dba1 battery Satellite A25 MA10 MA11 MC9328MX21 S72WS256NEE MC9328MX21ADS
Contextual Info: Complete DragonBall i.MX21 Memory Solution Application Note Overview The Freescale DragonBall i.MX21 microcontroller is a popular choice for smart phones, wireless PDAs, and many other mobile products. A cost effective memory solution for mobile DragonBall products should include Flash with

MD2811-D32-V3

Abstract: TRUEFFS MD-2811-D32-V3 MD2811-D16-V3Q18 MD2811-D32V3 MD2811-D32 MD3831-D16-V3Q18 TC58C256AFT TC58C1287AXB TC58C128AFT
Contextual Info: TC58C128AFT / TC58C128AFTI /TC58C1287AXB TC58C256AFT/ TC58C256AFTI/ TC58C256AXB TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE MOS 128-MBIT, 256-MBIT CMOS NAND E2PROM with Flash Controller Flash Disk with Protection and Security-Enabling Features

toshiba nand tc58

Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
Contextual Info: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a

JS28F256P30

Abstract: JS28F256P30T JS28F256P30BF PC28F256P3 RC48F4400P0VB0
Contextual Info: Numonyx AxcellTM Flash Memory P3065nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP

TFBGA137

Abstract: BGA137 BGA bga 10x13 MCP NAND DDR NAND FLASH BGA zc 409 NAND512-M NAND01G-M NAND256-M NAND256R3M0
Contextual Info: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM

Contextual Info: MCM28F256ACH MCM28F256ACH 256-Mbit 32-Mbit x 8, 16-Mbit x 16 Flash Memory Module with Internal Decoding and Boundary Scan I/O Buffers Literature Number: SNOS764A July 1995 MCM28F256ACH 256-Mbit (32-Mbit x 8 16-Mbit x 16) Flash Memory Module with Internal Decoding and Boundary Scan I O Buffers

JS28F256P30

Abstract: PC48F4400 PC28F256P30BFE RC48F4400P PC28F256P30B JS28F256P30T PC48F4400P0 PC28F256P30 js28f256p RC28F256P30TF
Contextual Info: Numonyx Flash Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP

SAMSUNG NAND FLASH

Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Contextual Info: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for

JS28F256P33

Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
Contextual Info: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,

powerpc dhrystone

Abstract: amcc 440 embedded powerpc 440 440GP DDR200 DDR266 404 MIPS
Contextual Info: PRODUC T BRIEF PowerPC 440GP Embedded Processor With speeds of up to 500 MHz and a rich peripheral mix, the PowerPC 440GP embedded processor offers exceptional performance, design flexibility, and robust features for demanding networking, storage and other embedded applications. Its high level of integration — including on-chip SRAM, low power dissipation

KS32P6632

Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Contextual Info: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512

Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

AN1728

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A
Contextual Info: AN1728 APPLICATION NOTE How to Use the Copy Back Feature of ST Small Page NAND Flash Memories CONTENTS • DESCRIPTION ■ WHEN TO USE A COPY BACK PROGRAM OPERATION ■ PSEUDO CODE ■ CONCLUSION ■ REFERENCES ■ REVISION HISTORY December 2005 ST Small Page NAND Flash memories feature a Copy Back

ARM1176JZF-STM

Abstract: 1080-lines H.264 encoder chip H.264 encoder ethernet TS demux ARM11 ARM1176JZF-S ISO7816 MB86H60 RGB888
Contextual Info: Product Profile MB86H60 Multi Standard Decoder for Set-Top-Boxes ‹Introduction This Fujitsu MB86H60 is a highly integrated System-on-Chip SoC and complies with the DVB standard currently used in various regions, mainly Europe. The LSI decodes full HD (1920dots x 1080lines) video compressed in

graphic card circuit diagram

Abstract: SMART ASIC bga HJ945010BP SH3-DSP hitachi sh3 network 7729R hitachi sh3 MCP market SH7729 hm52256
Contextual Info: EP-MT-01002A-02 Hitachi MCM/MCP Products Hitachi MCM/MCP Products Feb.1st, 2001 Multi Chip Module Products Design Dept. DRAM Business Division Semiconductor & Integrated Circuits Hitachi Ltd. EP-MT-01002A-02 Hitachi MCM/MCP Products 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

zoran coach 12

Abstract: zoran coach 6 zoran coach 6 firmware coach 12 zoran coach zoran coach 9 "Camera processor" ZR364* ZORAN ZR36470BGCG 8M cmos camera ZORAN CORPORATION
Contextual Info: COACH TM 9 Driving the Digital Lifestyle Digital Camera Processor ZR36470 Product Brief Zoran Corporation 1390 Kifer Road Sunnyvale, CA 94086-5305 Te l 408.523.6500 Fax 408.523.6501 www.zoran.com Description COACH 9 is an application specific digital signal processing IC,

zoran coach 12

Abstract: zoran coach 6 zoran coach 6 firmware Zoran ZR36463bgcg zoran coach 8 zoran coach ZR36460BGCG zoran coach 16 coach 12
Contextual Info: COACH TM 8 Driving the Digital Lifestyle Digital Camera Processor ZR36460 Product Brief Zoran Corporation 1390 Kifer Road Sunnyvale, CA 94086-5305 Te l 408.523.6500 Fax 408.523.6501 www.zoran.com Description COACH 8 is an application specific digital signal processing IC,

PF38F4060M

Abstract: PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A
Contextual Info: Numonyx StrataFlash Cellular Memory M18 Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

RC48F4400P0VB00

Abstract: RD48F4400P0VTQ0 strataflash 512 p30 JS28F256P30T85 JS28F128P JS28F640P30B85 PC28F256P30T85 JS28F256P30 RC28F256P30B85 JS28F640P30T85
Contextual Info: Intel StrataFlash Embedded Memory P30 1-Gbit P30 Family Datasheet Product Features • High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits

PXA272

Abstract: PXA271 PXA27x Processor design PXA271fc intel FDI PXA27x Processor Family Users Manual PXA27x Processor Family Intel PXA272 Intel XScale PXA272 pxa272 XScale
Contextual Info: Intel PXA27x Processor Family Memory Subsystem Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash die density: 128-, 256-Mbit — LPSDRAM die density: 256-Mbit — Flash + LPDRAM Combo x16 — Flash + Flash Combo (x32) Device Voltage

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

PC28F256P30BF

Abstract: PC48F4400P0VB0E JS28F256P30 RC28F256P30TF Numonyx TE28F256P30BF PC28F256P30 JS28F256P30tf PC48F PF48F
Contextual Info: NumonyxTM StrataFlash Embedded Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 unique factory device identifier bits