K4S280832 Search Results
K4S280832 Datasheets (47)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| K4S280832A | Samsung Electronics | 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL | Original | 110.2KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832A-TC/L10 | Samsung Electronics | 4M x 8-Bit x 4 banks synchronous DRAM. Max freq. 66 MHz(CL=2&3). Interface LVTTL | Original | 110.19KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832A-TC/L1H | Samsung Electronics | 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL | Original | 110.2KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832A-TC/L1L | Samsung Electronics | 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL | Original | 110.2KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832A-TC/L75 | Samsung Electronics | 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL | Original | 110.2KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832A-TC/L80 | Samsung Electronics | 4M x 8-Bit x 4 banks synchronous DRAM. Max freq. 125 MHz(CL=3). Interface LVTTL | Original | 110.19KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TC10 | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TC1H | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TC1L | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TC75 | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TC80 | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TCL10 | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TCL1H | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TCL1L | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TCL75 | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TCL80 | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TL10 | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TL1H | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4S280832B-TL1L | Samsung Electronics | 4M x 8-Bit x 4 Banks Sychronous DRAM | Original | 123.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K4S280832 Price and Stock
Samsung Electro-Mechanics K4S280832K-UC7516M X 8 SYNCHRONOUS DRAM, 5.4 NS, PDSO54 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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K4S280832K-UC75 | 448 |
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Buy Now | |||||||
| K4S280832K-UC75 | 12 |
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Buy Now | ||||||||
Samsung Electro-Mechanics K4S280832C-NC75IC,SDRAM,4X4MX8,CMOS,TSSOP,54PIN,PLASTIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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K4S280832C-NC75 | 320 |
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Buy Now | |||||||
Samsung Electro-Mechanics K4S280832F-TC75IC,SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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K4S280832F-TC75 | 22 |
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Samsung Electro-Mechanics K4S280832C-TC75IC,SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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K4S280832C-TC75 | 7 |
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Samsung Electro-Mechanics K4S280832C-TL1H16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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K4S280832C-TL1H | 7 |
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Buy Now | |||||||
K4S280832 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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K4S280832
Abstract: 133Mhz K4S280832D
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k4s280832d128mbit100mhza10/ap+2 | |
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Contextual Info: K4S280832D CMOS SDRAM 128Mbit SDRAM Extended Temp Support 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S280832D CMOS SDRAM |
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k4s280832d128mbit100mhza10/ap | |
K4S280832BContextual Info: K4S280832B CMOS SDRAM PIN CONFIGURATION Top view VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 |
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k4s280832ba10/ap54pin400mil+1 | |
K4S281632I-UC75
Abstract: K4S281632I-UC60 K4S281632I-UI75 K4S281632I 8MB SDRAM K4S281632I-UL75 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 K4S280832I
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k4s280432ik4s280832ik4s281632i128mb+10 | |
K4S280832K
Abstract: K4S281632K K4S280432K K4S280832KUC k4s280832k-uc K4S281632k-uc
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k4s280432kk4s280832kk4s281632k128mb+4 | |
k4s280832c-tc75
Abstract: M390S3320CT1-C75 K4S280432C-TC75 16MX8 32MX72 M390S1723CT1-C75 presence information
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pc133168pinm390s1723ct1-c7516mx72+8 | |
K4S280832A-TC75
Abstract: M390S3320AT1 16MX8 32MX72 M390S1723AT1-C75 M390S3320AT1-C75
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pc133168pinm390s1723at1-c7516mx72+7 | |
K4S280432E
Abstract: M390S1723ET1-C7A M390S1723ETU-C7A M390S3320ET1-C7A M390S3320ETU-C7A M390S3323ET1-C7A
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128mb256mb168pin72-bit+6 | |
M374S3323DTSContextual Info: PC133/PC100 Unbuffered DIMM M374S3323DTS M374S3323DTS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S3323DTS is a 32M bit x 72 Synchronous |
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pc133/pc100m374s3323dts32mx7216mx8+2 | |
M366S0924FTS-C7A
Abstract: M366S1723FTS-C7A M366S1723FTU-C7A M366S3323FTS-C7A M366S3323FTU-C7A M374S1723FTS-C7A M374S1723FTU-C7A
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128mb256mb168pin62/72-bit+7 | |
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Contextual Info: PC133/PC100 SODIMM M464S3323DN1 M464S3323DN1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M464S3323DN1 is a 32M bit x 64 Synchronous Part No. |
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pc133/pc100m464s3323dn132mx6416mx8+3 | |
Hynix Cross Reference
Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
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w946432adw942504ahw942508ahw942516ah+13 | |
m366s1723cts-c75
Abstract: M366S1723BTS K4S641632 M366S0924CTS-C75 M366S1723ATS K4S640832D-TC75 M374S0823DTS-C75 K4S280832A-TC75
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pc133168pinm366s0424dts-c754mx64+12 | |
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Contextual Info: PC133 Low Profile Unbuffered DIMM M366S1723ETU M366S1723ETU SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M366S1723ETU is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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m366s1723etupc13316mx6416mx8+2 | |
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Contextual Info: PC133 Low Profile Unbuffered DIMM M366S3323ETU M366S3323ETU SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M366S3323ETU is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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m366s3323etupc13332mx6416mx8+2 | |
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Contextual Info: M374S3323ETS PC133 Unbuffered DIMM M374S3323ETS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S3323ETS is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung |
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m374s3323etspc13332mx7216mx8+2 | |
B1A12Contextual Info: 128MB, 256MB Registered DIMM Preliminary SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb F-die with 72-bit ECC Revision 0.0 December. 2003 Rev. 0.0 December. 2003 128MB, 256MB Registered DIMM Preliminary SDRAM Revision History Revision 0.0 December, 2003 |
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128mb256mb168pin72-bit+1 | |
M374S3323CT0
Abstract: M374S3323CT0-C7A
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m374s3323ct0pc13332mx7216mx8+1 | |
M374S3323CT0
Abstract: M374S3323CT0-C75
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m374s3323ct0pc133pc10032mx72+2 | |
K4S280832C-TC75
Abstract: M374S1723CTS M374S1723CTS-C7A
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m374s1723ctspc13316mx7216mx8+2 | |
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Contextual Info: PC133 Unbuffered DIMM M366S3323ETS M366S3323ETS SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M366S3323ETS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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m366s3323etspc13332mx6416mx8+2 | |
M366S1723BTSContextual Info: M366S1723BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Oct., 1999 • PC133 first published. REV. 0 Oct. 1999 M366S1723BTS PC133 Unbuffered DIMM M366S1723BTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
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m366s1723btspc13316mx6416mx8 | |
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Contextual Info: PC133 Unbuffered DIMM M366S1723ETS M366S1723ETS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M366S1723ETS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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m366s1723etspc13316mx6416mx8+2 | |
K4S560832A
Abstract: K4S560832B K4S640832D-TC75 K4S641632C-TC75 M366S1623DT0-C75 K4S280832C-TC75 m374s6453bt0-c75 K4S280832A-TC75 K4S281632B-TC75
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pc133168pinm366s0824ct0-c758mx64+12 | |