256K X8 SRAM 5V Search Results

M48T35

Abstract: M48T35Y SOH28
Contextual Info: M48T35 M48T35Y 256K 32K x8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS FREQUENCY TEST OUTPUT for REAL TIME

lh62256

Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
Contextual Info: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s

EM620FU8

Contextual Info: merging Memory & Logic Solutions Inc. EM620FU8 Series Low Power, 256Kx8 SRAM Document Title 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft December 18, 2002 0.1 2’nd Draft

Contextual Info: rZT SGS-THOMSON M48T35 M48T35Y ^ 7 # . raDWHHHOTMDEi 256K 32K x8 TIMEKEEPER • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

CYM1641

Abstract: B 164155 CYM1641HD 256k x8 SRAM VRE CS 1800
Contextual Info: CYM1641 ^SSSSsSSssì ¿ss r^ Y P li’F.^.S . ^ " ' SEMICONDUCTOR ' ' 256K x 16 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module • High-speed CMOS SRAMs — Access tim e of 25 ns • Customer configurable — x4, x8, x l6

M4T28-BR12SH1

Abstract: M48T35 M48T35Y SOH28
Contextual Info: w , S G S -T H O M S O N k7# . M48T35 M48T35Y 256K 32K x8 TIMEKEEPER • INTEGRATED ULTRA LOW POWER SRAM, R EALTIM E CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

M48Z32Y-100PC1

Abstract: m48z32y M48T08-150PC1 PCDIP28 M48Z32-85PC1 m48t12-150 m48t08-150 MK41T56N00 M48T02-120PC1 105v
Contextual Info: MEMORIES and SMARTCARD PRODUCTS STATIC RAMS ZEROPOWER SRAM Organis. Speed ns VCC Range Feature Temperature Range (°C) Package M48Z02-120PC1 x8 120 5V + 10/-5% 10 Year Battery Life 0 to 70 PCDIP24 M48Z02-150PC1 x8 150 5V + 10/-5% 10 Year Battery Life 0 to 70

samsung dram

Abstract: cmos 4001 dip
Contextual Info: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X DRAM X XXXXX X X X SPEED ORGANIZATION X1 X4 X8 X9 X16 X18 PROCESS & POWER •C: CMOS, 5V •V: CMOS, 3 3V •6 •7 : •8 : •10: 60ns 70ns 80ns 100ns PACKAGE DIP SOJ ZIP TS O P n TR: Reverse

Contextual Info: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED 6 0n s ORGANIZATION •7 • 1: XI • 4: X4 70ns 80ns •1 0 100ns • 8 X8 • 9 X9 •1 6 X16 •1 8 X1S PROCESS & POWER •C CMOS. 5V •V CMOS. 3 3V PACKAGE

SC4M

Contextual Info: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : 60ns •7 • 70ns •8 : 80ns •10: 100ns ORGANIZATION • 8 • 9 •16 • 18 X1 X4 X8 X9 X16 X18 PROCESS & POWER •C CMOS, 5V •V CMOS, 3 3V PACKAGE

64kx4 DRAM

Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Contextual Info: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

KM616V4002A

Abstract: 6161002 ER255 KM732V589
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15

um61256

Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
Contextual Info: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010

sram card 60 pin mitsubishi

Abstract: m5m51008c M5M5408
Contextual Info: L-41001-0E MITSUBISHI ELECTRIC Mitsubishi Low Power SRAM Technical Direction 256K 512K 1M 2M 4M 8M 16M Large Capacity Low Power SRAM High Speed Power down current 5.0V±0.5V : 55ns 256K : XL ver. 2µA max. 2.7V~3.6V : 85ns 70ns/55ns 1M : XL ver. 4µA max.

M25P08

Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
Contextual Info: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010

um61256

Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
Contextual Info: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

LA 8512

Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
Contextual Info: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

taa 480

Contextual Info: 64-bit Cache M odule A S 7 M 6 4 T 3 A Series Features Logic Block Diagram ♦ 8-bit 5V asynchronous tag , — * — » -► — ► ♦ High speed: tAA= 12-15 ns r LA 5 -19 I A4B A3B ECS OE — — — — ► A4 ► ► CE ► OE 1 “ I I A4A A3A E£S

ECS6

Abstract: TI06
Contextual Info: 6 4-bi t C a c h e M o d u l e A S 7 M 6 4 U 3 A Series Features Logic Block Diagram ♦ 64-bit 3.3V asynchronous data 1 A4A A3A CW E 0 E ♦ 8-bit 5V asynchronous tag — — — — * ► ► ► ♦ High speed: tAA = 12-15 ns A4B A3B CWE OE — — —

64T3A

Contextual Info: Pipelined Burst S y n c h r o n o u s | A S7M 64T3B Series 64 - bi t C a c h e M o d u l e Features Logic Block Diagram ♦ 64-bit 3.3V pipelined burst data ♦ 8-bit 5V asynchronous tag \ •wrE: 256KB o o A18 ADSC -► ADSC CADV - ► ADSP ♦ High speed: 6/7 ns clock access time