1013060/1
Abstract: 2mbit HY57V281620HCT-H HY57V281620HCT-6 HY57V281620HCT-7 HY57V281620HCT-8 HY57V281620HCT-K HY57V281620HCT-P HY57V281620HCT-S
Text: 0.1 : Hynix Change 0.2 : 143Mhz Add, Burst read single write mode correction HY57V281620HC L/S T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications
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143Mhz
HY57V281620HC
16bits
728bit
152x16
400mil
1013060/1
2mbit
HY57V281620HCT-H
HY57V281620HCT-6
HY57V281620HCT-7
HY57V281620HCT-8
HY57V281620HCT-K
HY57V281620HCT-P
HY57V281620HCT-S
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HY57V281620B
Abstract: No abstract text available
Text: HY57V281620B L T 0.1 : Hynix Change HY57V281620B(L)T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16
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HY57V281620B
16bits
728bit
152x16
400mil
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PDF
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4banks
Abstract: No abstract text available
Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620A is organized as 4banks of 2,097,152x16
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HY57V281620A
16bits
HY57V281620A
728bit
152x16
400mil
54pin
4banks
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PDF
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HY57V281620AT-P
Abstract: HY57V281620ALT-S HY57V281620AT-6 HY57V281620A HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620AT-7 HY57V281620AT-8 HY57V281620AT-H HY57V281620AT-K
Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620A is organized as 4banks of 2,097,152x16
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Original
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HY57V281620A
16bits
HY57V281620A
728bit
152x16
400mil
54pin
HY57V281620AT-P
HY57V281620ALT-S
HY57V281620AT-6
HY57V281620ALT-6
HY57V281620ALT-7
HY57V281620AT-7
HY57V281620AT-8
HY57V281620AT-H
HY57V281620AT-K
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HY57V281620A
Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16
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HY57V281620A
16bits
HY57V281620A
728bit
152x16
400mil
54pin
HY57V281620ALT-HI
HY57V281620ALT-KI
HY57V281620ALT-PI
HY57V281620ALT-SI
HY57V281620AT-HI
HY57V281620AT-KI
HY57V281620AT-PI
HY57V281620AT-SI
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16
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HY57V281620A
16bits
HY57V281620A
728bit
152x16
400mil
54pin
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PDF
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Hynix Cross Reference
Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T
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W946432AD
W942504AH
W942508AH
W942516AH
256Mb
2Mx32
64Mx4
32Mx8
Hynix Cross Reference
dram cross reference
WINBOND
hyundai hy57v161610d
WINBOND cross reference
64Mb samsung SDRAM
TC59SM716FT/AFT
256mb
K4H560838B
hy57v
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V281620HC L T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L)T is organized as 4banks of 2,097,152x16
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
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PDF
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HY57V281620HCT-6
Abstract: HY57V281620HCT-H HY57V281620HCLT-6 HY57V281620HCLT-7 HY57V281620HCT-7 HY57V281620HCT-8 HY57V281620HCT-K HY57V281620HCT-P HY57V281620HCT-S
Text: HY57V281620HC L T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L)T is organized as 4banks of 2,097,152x16
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Original
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
HY57V281620HCT-6
HY57V281620HCT-H
HY57V281620HCLT-6
HY57V281620HCLT-7
HY57V281620HCT-7
HY57V281620HCT-8
HY57V281620HCT-K
HY57V281620HCT-P
HY57V281620HCT-S
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V281620HC L T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L)T is organized as 4banks of 2,097,152x16
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Original
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
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PDF
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54pin TSOP
Abstract: HY57V281620B HY57V281620BT8
Text: HY57V281620B L T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16
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HY57V281620B
16bits
728bit
152x16
400mil
54pin
54pin TSOP
HY57V281620BT8
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PDF
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HY57V281620HCLT-6I
Abstract: HY57V281620HCLT-7I HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-HI HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
Text: HY57V281620HC L T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L)T is organized as 4banks of 2,097,152x16
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Original
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
HY57V281620HCLT-6I
HY57V281620HCLT-7I
HY57V281620HCT-6I
HY57V281620HCT-7I
HY57V281620HCT-8I
HY57V281620HCT-HI
HY57V281620HCT-KI
HY57V281620HCT-PI
HY57V281620HCT-SI
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PDF
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HY57V281620HCTP-H
Abstract: HY57V281620HCTP-6
Text: HY57V281620HC L/S TP 4 Banks x 2M x 16bits Synchronous DRAM 128M S-DRAM (Lead Free Package) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY57V281620HC
16bits
728bit
400mil
54pin
HY57V281620HCTP-H
HY57V281620HCTP-6
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V281620HD L T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HD(L)T is organized as 4banks of 2,097,152x16
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HY57V281620HD
16bits
728bit
152x16
400mil
54pin
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PDF
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hynix hy57v281620hct
Abstract: No abstract text available
Text: HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16
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Original
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
hynix hy57v281620hct
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PDF
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HY57V281620HCT-HI
Abstract: HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
Text: HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16
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Original
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
HY57V281620HCT-HI
HY57V281620HCT-6I
HY57V281620HCT-7I
HY57V281620HCT-8I
HY57V281620HCT-KI
HY57V281620HCT-PI
HY57V281620HCT-SI
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PDF
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HY57V281620HCT-6I
Abstract: HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-HI HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
Text: 0.9 : IT Part C/S New generation HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16
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Original
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
HY57V281620HCT-6I
HY57V281620HCT-7I
HY57V281620HCT-8I
HY57V281620HCT-HI
HY57V281620HCT-KI
HY57V281620HCT-PI
HY57V281620HCT-SI
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jan. 2007 Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
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128Mb
16bits
128Mbit
8Mx16bit)
HY57V281620F
728bit
HY57V281620E
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Dec. 2004 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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128Mb
16bits
128Mbit
8Mx16bit)
HY57V281620E
728bit
A10/AP
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jan. 2007 Preliminary 1.0 Final Version Apr. 2007 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
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Original
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128Mb
16bits
128Mbit
8Mx16bit)
HY57V281620F
728bit
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PDF
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HY57V281620ELT
Abstract: HY57V281620ET
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Dec. 2004 1.1 1. Corrected PIN ASSIGNMENT A12 to NC Jan. 2005 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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128Mb
16bits
128Mbit
8Mx16bit)
HY57V281620E
728bit
A10/AP
HY57V281620ELT
HY57V281620ET
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PDF
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HY57V281620ALT-7
Abstract: HY57V281620ALT-6
Text: HY57V281620A L T 8Mx16-bit, 4K Ref, 4Banks., 3.3V DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620A is organized as 4banks of 2,097,152x16
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OCR Scan
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HY57V281620A
8Mx16-bit,
728bit
152x16
400mil
HY57V281620ALT-7
HY57V281620ALT-6
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V281620HD L T 8Mx16-bit, 4KRef, 4Banks., 3.3V DESCRIPTION The Hynix HY57V281620HD(L)T is a 134,217,728bit CM OS Synchronous DRAM, ideally suited fo r the main m em ory applications which require large m em ory density and high bandwidth. HY57V 281620HD(L)T is organized as 4banks o f 2,097,152x16
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OCR Scan
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HY57V281620HD
8Mx16-bit,
728bit
HY57V
281620HD
152x16
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PDF
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PC100
Abstract: PC133 54-PIN HYM71V653201
Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH
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OCR Scan
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
PC100
54-PIN
HYM71V653201
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PDF
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