25 SOT89 Search Results

MXR5583

Abstract: MXR5943 BFQ17 BFQ18A BFQ19 MR3866 MXR5160
Contextual Info: SURFACE MOUNT PRODUCTS continued SOT-89 Transistors (continued) RF NPN hFE *T Device Min (MHz) BFQ19 BFQ18A MXR5943 BFQ17 MR3866 IC (mA) V b R(CEO ) Min 50 25 25 25 25 10 200 50 50 50 50 50 25 10 100 - 100 50 4000 3200* 1200 1200 500 50 150 50 15 15 30

25 SOT89

Contextual Info: BCX68-16 OBSOLETE - USE BCX68-25 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX68 ISSUE 3 – FEBRUARY 2007 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX69 PARTMARKING DETAIL – BCX68 – CE BCX68-16 – CC BCX68-25 – CD

TSSOP16

Abstract: TSSOP16 datasheet sot223 transistor SOT23 sot89 To92 transistor TSSOP-16 SOP8 Package SSOT24
Contextual Info: Package Power Dissipation Power Dissipation: Pd（mW） Package Power Dissipation vs. Ambient Temperature Ambient Temperature: Ta（℃） USP6B/C SOT23/25/26/26W, SSOT24, MSOP8A/10 SOP8, TO92, SOT223 TSSOP16 SOT89/89-5 SOT23/25/26 When mounted on PCB TSSOP16 (When mounted on PCB)

Contextual Info: MMBTA94U PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Current -IC 300 mA Power Dissipation Ptot 625 mW Tj 150 Junction Temperature C O Characteristics at Tamb = 25 OC Parameter Symbol Min.

mmbta44

Contextual Info: MMBTA44U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Current IC 300 mA Power Dissipation Ptot 625 mW Tj 150 Junction Temperature C O Characteristics at Tamb = 25 OC Parameter Symbol Min.

dn5d

Abstract: DN2540 DN2535 DN2535N3 DN2535N5 DN2540N3 DN2540N5 DN2540N8
Contextual Info: DN2535 DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) Order Number / Package IDSS (min) TO-92 TO-220 TO-243AA* 350V 25 150mA DN2535N3 DN2535N5 — 400V 25 150mA DN2540N3 DN2540N5 DN2540N8 * Same as SOT-89.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 Transistors SOT-89 TRANSISTOR（ NPN ） 1. BASE FEATURES Power dissipation PCM : 0.75 2. COLLECTOR 1 2 W（Tamb=25℃） 3. EMITTER 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

0119A

Abstract: MH02
Contextual Info: PRELIMINARY INFORMATION subject to change without notice August 25, 2000 X Suffix '–LT' & '–UA' Pinning PTCT CC 2 3 OUTPUT SUPPLY 1 GROUND V Dwg. PH-003-2 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS at TA = +25°C Supply Voltage, VCC . 26.5 V

B772

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） FEATURES Power dissipation : 625 PCM SOT-89 1 2 3 1. BASE 1 m W（Tamb=25℃） 2. COLLETOR 2 3 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted

ZENER DIODE 15Y

Abstract: Zener diode 16y c5v1 zener diode c30 C30 DIODE ZENER 16y zener C4V7 22y diode C3V9 zener diode 11y
Contextual Info: BZV49 SERIES C2V7 - C47 SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range vz

2N4858 TEXAS

Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

SIEMENS 5SN

Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

C5V1

Abstract: C4V7 c24 zener BZV4 BZV49
Contextual Info: I SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 BZV49 SERIES O_ ' ABSOLUTE MAXIMUM RATINGS as per Electron Coc ing Sytem . PARAMETER SYMBOL Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb=25“C

Contextual Info: Supertex inc. ^ T P 25 D Lo w T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss ! Order Number / Package R DS ON V GS«h) b (O N ) (max) (max) (min) TO-92 TO-243AA* DICE+ -350V 25Î2 -2.4V -0.4A TP2535N3 — TP2535ND

Package Power Dissipation

Abstract: TSSOP16
Contextual Info: Package Power Dissipation vs. Ambient Temperature 600 Power Disspation: Pd mV 500 400 300 200 100 20 40 60 Ambient Temperature: Ta(℃) USP3/4/6B/6C USP8/10 ,MSOP8/10 SOT23/25/26 SOP8,TO92 TSSOP16 SOT89/89-5 80 100

ds132

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM

1SAM

Contextual Info: ZVP2120Z SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET * PARTMARKING DETAIL - P10 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVP2120G DATASHEET ABSOLUTE M AXIM UM RATINGS PARAMETER SYM BOL » VALUE ' UNIT -200 -0.17 -1.2 Drain-Source Voltage Continuous Drain Current @ Tamb=25°C

GMA44

Abstract: GMA94
Contextual Info: ISSUED DATE :2005/03/25 REVISED DATE : G M A9 4 P N P E P I TA X I A L P L A N A R T R A N S I S T O R Description The GMA94 is designed for application requires high voltage. Features High voltage: VCEO=400V min at IC=1mA High current gain: IC=300mA at 25

BCX68

Abstract: BCX68-16 BCX68-25 BCX69 FMMT449 DSA003675
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX68 ISSUE 2 – FEBRUARY 1995 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX69 PARTMARKING DETAIL – BCX68 – CE BCX68-16 – CC BCX68-25 – CD E C B SOT89 ABSOLUTE MAXIMUM RATINGS.

40530 transistor

Abstract: MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591
Contextual Info: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)

EFC240D-SOT89

Abstract: 47DBM
Contextual Info: Excelics EFC240D-SOT89 DC-4GHz PRELIMINARY DATA SHEET Low Distortion GaAs Power FET Features 177-183 65-69 65-75 15-25 SOURCE 29-31 44 DRAIN GATE SOURCE 95-100 • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE +30.5dBm TYPICAL OUTPUT POWER 13.0dB TYPICAL POWER GAIN AT 2GHz

Contextual Info: AWB459 Wide band MMIC Amplifier Features ž 20 dB Gain at 1200 MHz ž 23.5 dBm P1dB at 1200 MHz ž 38 dBm Output IP3 at 1200 MHz ž 1.25 dB NF AWB459 ž +5 V Single Supply Package Style: SOT89 Typical Performance Supply Voltage = +5 V, TA = +25 °C, Z0 = 50 W

NXP SMD DIODE MARKING CODE T4

Abstract: MARKING CODE t4 diode anode common
Contextual Info: PESD3V3L5UK; PESD5V0L5UK Low capacitance unidirectional fivefold ESD protection diode arrays Rev. 1 — 25 August 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional fivefold ElectroStatic Discharge ESD protection diode

marking BHR

Abstract: BHR SOT89 2SB1386 TRANSISTOR br bhr
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR PNP FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol