25/AT&T POWER MODULE Search Results

BSM15GD100D

Abstract: C160 004S7 VM305171
Contextual Info: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes

BSM15GD100D

Abstract: diode bridge 15G
Contextual Info: SIEMENS B S M 15G D 100D IG B T M o d u le Preliminary Data V CE = 1000 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80 C • • • • • Power module 3-phase full bridge Including fast free-wheel diodes Package with insulated metal base plate

3Tg 21 10 siemens

Abstract: BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d
Contextual Info: bGE D • A23SbOS OGMSöDfl ISO ■ S I E G Sl EM ENS SIEMENS AKTIEN6ESELLSCHAF T - 2 3 ^ 0 7 BSM 25 GB 100 D BSM 25 G AL 100 D IGBT Module Preliminary Data vCE= 1000 v / C = 2 x 35 A at Tc = 25 C / c = 2 x 25 A at Tc = 80 C • Power module • Half-bridge/Chopper

nf 0036 diode

Abstract: Diode 15630 CM1000HA-28H cm50dy-28 CM1200HA-34H
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1400 VOLT HIGH PERFORMANCE H-SERIES IGBTMOD TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c = 25 C (T j Maximum = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISICS

BSM15GD120D

Abstract: 14V-12 vm305171 C160 QD45
Contextual Info: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes

350DU-5F

Contextual Info: m m ìe x Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 TRENCH G ATE IGBTMOD TRANSISTOR POWER MODULES 250 Volt IGBTMOD™ Transistor Power Modules Major Ratings and Characteristics at Tc = 25=C (T, Maximum = 150C) MAXIMUM RATINGS

Contextual Info: int ! P » D U © T IP K IIW O E W Intel386 EX EMBEDDED MICROPROCESSOR Static lntel386TM CPU Core — Low Power Consumption — Operating Power Supply 2.7V to 5.5V — Operating Frequency 16 MHz at 2.7V to 3.3V; 20 MHz at 3.0V to 3.6V; 25 MHz at 4.5V to 5.5V

BSM15GD120D

Contextual Info: SIEMENS B SM 15 G D 120 D IG B T Module Preliminary Data VCE = 1200 V I c = 6 x 25 A at Tc = 25 "C I c = 6 x 1 5 A at r o = 80" C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 31’

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

Contextual Info: SIEMENS IG B T M o d u le Prelim inary Data BSM 0 5 G D 100D VCE= 1000 V / c = 6 x 5.5 A at Tc = 25 "C / c = 6 x 5.0 A at T c = 40 C • • • • • Power module 3-phase full bridge Including fast free-wheel diodes Package with insulated metal base plate

PM15CZF120

Abstract: PM10CSJ060 pm15csj060
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 3RD GENERATION INTELLIMOD INTELLIGENT POWER MODULES Major Ratings and Characteristics at Tc = 25 C (T, Maximum = 150 C) MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS IGBT inverter Sector

Contextual Info: 19-0326; Rev 0; 12/94 Signa l-Line Circ uit Prot e c t ors _Fe a t ure s ♦ ±40V Overvoltage Protection ♦ Open Signal Paths with Power Off 100Ω Signal Paths with Power On ♦ 1nA Max Path Leakage at +25°C ♦ 44V Maximum Supply Voltage Rating

Transformer 500 volt to 24 a c 24 dc 240 ac volt

Abstract: P575
Contextual Info: C OMPUT ER PRDTS/ POWER T=IC D • 2313103 OOQD3bP T17 ■ CPR T ' 57' ° 5 SPECIFICATIONS All Specifications Typical at Nominal Line, Full Load and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS MED 300/500 SERIES Single, Dual and Triple Outputs ■

siemens igbt BSM 200 GA 120

Contextual Info: SIEMENS BSM 200 GA 120 D IGBT Module Prelim inary D ata V CE = 1200 V / c = 275 A at Tc = 25 C / c = 200 A at T c = 80 C • • • • • Power m odule Single switch Including fast free-wheel diodes Package with insulated metal base plate Package outlines/C ircuit diagram : 41'

Contextual Info: SIEMENS IGBT Module BSM 300 G A 120 D Preliminary Data V CE = 1200 V / C = 400 A at r c = 25 C / c = 300 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes Package with insulated metal base plate Package outlines/C ircuit diagram : 41

sk025a

Contextual Info: Datasheet September 1991 . _ — AT&T Microelectronics SK025-Series Power Modules: dc-dc Converters; 48 Vdc Wide Input; 25 W Features • Low profile: 0.45 in. x 3.6 in. x 1.9 in. ■ High efficiency: 82% typical ■ High power-density: 8.1 W/in.3 ■ Wide input voltage range: 38 Vdc to 72 Vdc

siemens igbt BSM 50 gb 100 d

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb C160 C67076-A2100-A2 DD45 diode wss bsm siemens GGM5 C67076-A2002-A2
Contextual Info: bOE D • 8 2 3 5 b D 5 Q D L*Sfi4D S4b « S I E G SIEMENS s i e „ e n s A K T I E NGESELLSCHAF IGBT Module BSM 50 GB 100 D BSM 50 GAL 100 D Preliminary Data V CE = 1000 V / C = 2 x 70 A at T c = 25 C / c = 2 x 50 A at T c = 80 C • • • • • Power m odule

PM554

Abstract: PM555 PM542 PM576 PM500 PM534 PM563 PM562 pm574
Contextual Info: COMPUTER PRDTS/ POWER “H C D • 5313103 □QQQ3St i L13 ■ CPR T ~S7'D5 SPECIFICATIONS All Specifications Typical at Nominal Line, Full Load 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS Voltage Accuracy. ±1.0%, max. Temperature Coefficient.

siemens igbt BSM 75 gb 100

Abstract: siemens igbt BSM 150 Gb 160 d AL100-D Q102 C67076-A2104-A2 siemens igbt BSM 150 gb 100 d BSM 75 GB 120 D siemens igbt BSM 100 gb BSM 225 IGBT Power Module sieg
Contextual Info: LOE D • ä235bDS 0045flSb ^03 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ? BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 2 x 100 A at r c = 25 "C / c = 2 x 75 A at T c = 80 C • • • • • Power m odule Half-bridge/Chopper

BSM200GA100D

Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
Contextual Info: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

siemens igbt BSM 200 GA 120

Abstract: siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100
Contextual Info: bDE T> m 023SbQ5 GG4SCU E 5b2 « S I E G SIEMENS S X E K N S AKTIENSESELLSCHAF 7 IGBT Module Preliminary Data ^ ? - ^ 5 " BSM 200G A120D VCE = 1200 V / C = 275 A at Tc= 25 C / c =200 A at r c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

600HU

Abstract: GE 047 TRANSISTOR transistor nf 37 150DU12H 100DU-12H
Contextual Info: m N EREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 HIGH PERFORMANCE U-SERIES IG BTM O D TRANSISTOR POWER MODULES Major R atings and Characteristics at Tc = 25 C (T¡ M axim um = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISES

HM303

Abstract: HE581 power supply Socket ms013-0 HM Series HE581 hm330 HM303 circuit HE500 HE300 HM53
Contextual Info: COMPUTER PR DTSi POWER Ï eJ 3313103 0GQG3b4 1 1 ~ T -J 7 -0 5 SPEC IFICATIO NS All Specifications Typical at Nominal Line, Full Load and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS Voltage Accuracy . ± 2.0%, max. Temperature Coefficient

ICE-50

Abstract: 290134 290192
Contextual Info: in t e T 85C960 1-MICRON CHMOS 80960 K-SERIES BUS CONTROL juPLD • Operates with 80960KA/KB at 20 MHz and 25 MHz ■ Ice ~ 50 mA Max. ■ UV Erasable CerDIP or OTPtm ■ 100% Generlcally Testable Logic Array ■ Based on Low Power CHMOS HIE* Technology