600HU Search Results

igbt 400A, 1200V mitsubishi

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

25TN2H

Abstract: ME501210 800HB E501606 M6AB 1200HB-66H 57959L E50081 20CSJ060 30CSJ060
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 n _ i j ] _ s i _ h A E Dim. Inches Millimeters Dim. Inches Millimeters Dim. Inches 0.79 20.0 A 1.54 Max. 39.0 Max. B 0.61 15.6 B 1,268±0.008

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co n fig u ra ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

Contextual Info: MITSUBISHI IGBT MODULES CM50DY-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge con­ figuration with each transistor hav­

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching appli­ cations. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast

M57962L

Abstract: IGBT DRIVER SCHEMATIC 80V DC to 12v dc 5 amp converter circuit diagram 12V DC to 35V dC converter circuit diagram circuit diagram for igbt driver 12V DC to 1000V dC converter schematic diagram CM1200HA-24J pnp transistor 1000v IGBT PNP current booster schematic
Contextual Info: Advance Product Bulletin Diamond Power Products BG1A Universal High Power IGBT Module Gate Driver Board Free Sample Board with purchase of Gate Driver and DC-DC Converter M57962L, M57160AL Description Features BG1A is a fully isolated gate drive circuit board designed for use

600HU

Abstract: GE 047 TRANSISTOR transistor nf 37 150DU12H 100DU-12H
Contextual Info: m N EREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 HIGH PERFORMANCE U-SERIES IG BTM O D TRANSISTOR POWER MODULES Major R atings and Characteristics at Tc = 25 C (T¡ M axim um = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISES

Contextual Info: MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

Contextual Info: MITSUBISHI IGBT MODULES 600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: I: I _ I_ I_ II — I I i > \ M p I Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT in a single configuration with

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

50DY-12H

Abstract: 50dy12h
Contextual Info: MITSUBISHI IGBT MODULES CM50DY-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of tw o IGBTs in a half-bridge co n ­ figuration w ith each tra n sisto r hav­