0235FC Search Results

Contextual Info: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode Chip position • SFH 234 S Common Cathode 2.0 s 0.45 i— L LO O Ni O OCO ct>ct> c o c o c d m* ^ rrfl 3 .0 j _14.5 12.5" 0.3max Radiant sensitive area 0.5x0.5mm each Approx. weight 1.5 g

74LS04C

Abstract: gd5f 80515K m8ab
Contextual Info: 47E D • fl23SfciüS D02ÔS7D fl ■ SIEG SIEMENS AKT IENGESELLSCHAF Xsrv SAB 80515K 8-Bit Single-Chip Microcontroller ROM-less Version • • • • • • • • • • • • • A dditional bus interface fo r external m em ory 256 x 8 RAM S ix 8-bit ports

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: SIEMENS SBL51414G/N/Z MEDIUM POWER SBM51414G/N/Z lo w p o w e r 1300 nm Emitting, 1550 nm Receiving BIDl Transceiver Optical Module FEATURES • Bidirectional transmission in 2nd and 3rd optical window • Designed for passive optical networks • Integrated wavelength division multiplexer

Contextual Info: SIEMENS 8M X 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time 104 ns cycle time (-60 version) • Hyper page mode (EDO) capability

als31c

Contextual Info: SIEMENS 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller SAB-C502 Preliminary • Fully compatible to standard 8051 microcontroller • Versions for 12 / 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing of program and external data memory

ic bsp 350

Abstract: 235L Q67000-S227
Contextual Info: û235t>DS DOfllbE? 2Ô4 S IE M E N S BSP 350 MiniSmart • High-side switch • • • • • • • • Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse battery protection1 Switching inductive load

siemens Package Outlines P-LCC

Contextual Info: SIEMENS PEB 2055 PEF 2055 Electrical Characteristics 6 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol min. max. ta 70 85 ^stg -6 5 125 6C Vs vr max -0 .4 Vdd + 0-4 V 6 V T’a Storage temperature Maximum voltage on any pin Unit -4 0 Ambient temperature under bias: PEB

Q67127-C2061

Abstract: safc505 F701H C505C Q67127-C2057 VR212
Contextual Info: SIEMENS Microcomputer Components 8-Bit CMOS Microcontroller C505 Data Sheet 12.97 fl2 3 5 b 0 5 O ld E Ib B 5CH • Edition 12.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1997. All Rights Reserved.

V317

Abstract: s av36 67000-A5098
Contextual Info: bOE D • fl23£fc>05 004^135 471 « S I E G SIEMENS SIEMENS AKTIENCESELLSCHAF 'T TV-Stereo Processor - n - v n - D i TD A 6812-2 Prelim inary Data Bipolar IC Features • • • • • • • • • High quality stereo signal processing High S/N ratio

BD865

Abstract: BD861 ms 102y Q62702-D956 Q62702-D958 Q62702-D960
Contextual Info: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° E p ib a se p o w e r d a rlin g to n tra n s isto rs 15 W BD 861, BD 863, and BD 86 5 are m onolithic silicon NPN epibase pow er darlington transistors

TS 11178

Contextual Info: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEM ENS BB 304A Silicon Variable Capacitance Diode Preliminary Data • For FM tuners • Monolithic chip with common cathode for perfect tracking of both diodes • Uniform "square law" characteristics • Ideal Hifi tuning device when used in Low-distortion back-to back configuration

Contextual Info: • BEBSbOS DDTTDIS 5=14 SIEM ENS 16 K bit 2048 x 8 bit S erial CM O S E E P R O M s, I 2C S ynch ro n ou s 2-W ire Bus, Page Protection Mode SLx 24C 164/P Preliminary Features • Data EEPROM internally organized as 2Q48 bytes and 128 pages x 16 bytes

Siemens 1836

Contextual Info: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° Epibase p o w e r d arlington transistors 1 5 W BD 8 6 1 , BD 8 6 3 , and BD 8 6 5 are monolithic silicon NPN epibase power darlington transistors

ITL09

Abstract: marking code A7A SMD KL SN 102 lcd siemens b41 fiesta 1993 ATM circuit diagram SDT 15 56 siemens 230 96 siemens relay timer smd 2U 93
Contextual Info: SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 2 2.1 2.2 PXB 4220 O v e r v ie w . 7 F e a tu re s . 9

SS35L

Abstract: smd marking YB Q67100-Q1244 AAFL1
Contextual Info: SIEM EN S 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns • Multiple Burst Operation Read • Autom atic Com mand • Data M ask for Read / W rite control x4, x8

SDA 3526-2

Contextual Info: bOE ]> • fi23SbQS 0 0 4 ^ 4 1 ^ S IE M E N S T71 M S I E S t ^ - ,3 - z 6 SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 2-Kbit E2PROM with PC-Bus and 2 K Write Protection SDA 3526-2 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in

L0324

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C515A Advance Inform ation • • • • • • • • • • Full upward com patibility w ith SAB 80C515A/83C515A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation 32K byte on-chip ROM with optional ROM protection

Contextual Info: SIEMENS Low-Drop Voltage Tracker TLE 4250G Target Data Features • • • • • • • • • • • Output tracking tolerance < ± 0.5% Low drop voltage Wide operation range: up to 40 V Wide temperature range: - 40 °C < 7] < 150 °C Output protected against short circuit

TBB204G

Abstract: TBB 204 TBB204 colpitts oscillator 400 MHz NEOSID 220 TBB 200 G 3VF8 SMD KRP 8 PIN SMD IC L02
Contextual Info: S IEM EN S Mixer / Oscillator TBB 204 G Bipolar 1C Features • Low noise • Low spurious signal content good suppression of input signal/output signal • High conversion gain • High isolated RF, IF, LO-parts • W ide range of supply voltage (down to 3 V)

Contextual Info: LS K382 YELLOW LY K382 GREEN LG K382 ORANGE LO K382 PURE GREEN LP K382 SIEMENS SUPER-RED LED Lamps Flat Top T1 3 mm Super ARGUS LED Lamp Maximum Ratings Operating/Storage Temperature Range (Top T stg) •■-55°C to +100°C Junction Temperature (T j). 100°C

Contextual Info: SIEMENS 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns Multiple Burst Read with Operation Automatic Command and Controlled Single Write Precharge Data Mask for Read / Write control x4, x8