24JAN05 Search Results

Contextual Info: 4 T H IS DRAWING IS U N P U B L IS H E D . COPYRIGHT 2001 1 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. REVISIONS & • DESCRIPTION A L L RIG HTS R ESERVED. P LTR DATE Released FJB O -1 5 0 7 -0 4 24JAN05 DWN APVD G.Z. I.E. 2 4 .8 7 A ir

Contextual Info: T H 1S D R A W 1 NG 7T 1S COPYRIGHT U N P U B L 1S H E D . RELEASED 19 BY AMP FOR ALL INCORPORATED. ,19 P U B L 1C A T I O N RIGHTS LOC RESERVED. Dl ST REV I S IONS DY LTR DE SC R I P T I O N DWN D AT E NPR FPOO-0 349- 04 24JAN05 APVD LWY VT HOUSING: L CP, UL 94V-0 RATED, BLACK.

C2922

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Augat

Contextual Info: Imä W W ¿ usSuBl¿ h S& RtLEAStD ros VödCATiON y TÏCO OECTTOMCS CWPOWIW. REVISIONS a u fcfeiTS RBflWm 00 AD - 5B5B*T5fi— REV PER 0 G 3 C - 0 3 1 9 - 0 4 24JAN05 0.64um MIN GOLD OVER 1.27um MIN NICKEL. /\ 2.03um MIN TIN-LEAD OVER 1.27um COPPER.

Contextual Info: 4 3 COPYRIGHT BY TYCO ELECTRONICS CORPORATION. ~ 2 RE LE A S E D FOR P U B LIC A TIO N T H IS DRAWING IS U N P U B L IS H E D . LOC ES A L L RIGHTS RESERVED. 1 DIST REVISIONS 00 p LTR B D ESC R IPTiqN REVISED DATE F B 0 0 -0 0 1 2 -0 4 5 DWN c .w 24JAN05 APVD

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. D - , - ALL RIGHTS RESERVED. rUTL iï“ L T U J " y T L .52 ,08 C HOUSING SEE TABLE FOR PART NO C S II ñ ñ ñ ñ II Q POSITION #1 INDICATOR FARSIDE K rarograi

CSNE151

Abstract: CSNE151-204 HONEYWELL CSNE151
Contextual Info: A F0 - 5 5 HONEYWELL PART NUMBER CSNE 5 I -204 SUPPPY RANGP H O U S 1 NG M A T P R 1A P db 1 5 V G L A S S - P 1L L E D POPYPSTPR MPASURING NOM 1 N A P 25A 90A RANGP SPP OUTPUT NOM 1 N A H NOTP 3 M A X 1 MUM C O I H R E S 1S T A N C E A T 7 0 ° C N U M B E R OR

Qrr20

Contextual Info: Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.150 @ VGS = −4.5 V −1.5 0.175 @ VGS = −3.6 V −1.4 0.265 @ VGS = −2.5 V −1.2 D TrenchFETr Power MOSFET Qg (Typ) 2.9 SOT-363

SST5485

Abstract: SST5484 2N5485 2N5486 Transistor datasheet diode marking code YF marking yf 2N5484 2N5486 AN102 SST5486
Contextual Info: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 −0.3 to −3 2N/SST5485 −0.5 to −4 −25 3 1 −25 3.5 2N/SST5486

SUM75N04-05L

Abstract: SUM75N04 S5014
Contextual Info: SUM75N04-05L New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.005 @ VGS = 10 V 75a 0.006 @ VGS = 4.5 V 75a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature

J304

Abstract: J305
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 −2 to −6 −30 4.5 5 J305 −0.5 to −3 −30 3 1 FEATURES BENEFITS D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

Contextual Info: SUU50N06-07L New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)c 0.0074 @ VGS = 10 V 96 0.0088 @ VGS = 4.5 V 88 V(BR)DSS (V) 60 Q g D TrenchFETr Power MOSFETS D 175_C Junction Temperature D 100% Rg Tested

GMF05C

Abstract: GMF05C-GS08
Contextual Info: GMF05C Vishay Semiconductors ESD Protection Diode Array Features VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV (contact) IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 µs) • Small package for use in portable electronics

sh 604

Abstract: D220G20P3KL6 t 558 f
Contextual Info: HV 500 V Narrow Tolerance Vishay BCcomponents Ceramic Disc Capacitors Class 1, 500 V DC Narrow Tolerance FEATURES • Low losses • High stability D • High capacitance in small size • Kinked (preferred) or straight leads tangent line APPLICATIONS SH

B103

Abstract: 6858 A
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 R E V IS IO N S D E S C R IP T IO N P EC P1 0G3C

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - [T L T D - D 3 RELEASED FOR PUBLICATION BY TTCO ELECTRONICS CORPORATION. ryniirLrD- 0000 —i— ALL RIGHTS RESERVED. n=nL 0000 0 0 Cji >< >< >< >< iJCt)htc ) < ) < Tfir Tl' _1_1 _ 1 _ . ED or ED nr HOUSING SEE

J-Series

Abstract: Siliconix JFETs Dual J308 J309 J310 SST308 SST309 SST310 U309 U310
Contextual Info: J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 −1 to −6.5 J309 −1 to −4 −25 8 12 −25 10 J310 12 −2 to −6.5

Contextual Info: Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −7.1 0.043 @ VGS = −2.5 V −6.2 0.060 @ VGS = −1.8 V −5.3 D TrenchFETr Power MOSFET Qg (Typ) 14 1206-8 ChipFETr

Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V

SI7409ADN

Contextual Info: Si7409ADN New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile

Contextual Info: SUM40N03-30L New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 40 0.045 @ VGS = 4.5 V 33 D TrenchFETr Power MOSFET D 175_C Junction Temperature D 100% Rg Tested Qg (Typ)

Si5445BDC

Contextual Info: Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −7.1 0.043 @ VGS = −2.5 V −6.2 0.060 @ VGS = −1.8 V −5.3 D TrenchFETr Power MOSFET Qg (Typ) 14 1206-8 ChipFETr

73245

Abstract: SUM40N03-30L
Contextual Info: SUM40N03-30L New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 40 0.045 @ VGS = 4.5 V 33 D TrenchFETr Power MOSFET D 175_C Junction Temperature D 100% Rg Tested Qg (Typ)

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS D IS T CM 00 LTR DESCRIPTION R 1. SEE D E T A IL A A CIRCUIT IDENTIFICATION CHARACTERS ARE ADJACENT TO THE INDICATED CAVITIES, BUT LOCATION AND ORIENTATION