244D0 Search Results

Contextual Info: 1-6 Bellows-type half-pitch connectors S C S I- 2 External interface connectors FCN-240R type •S tra ig h t socket (Solder dip) [f c n -244D05 o-g / e ] 52 .4 0 42 .3 5 ►Right-angle socket (Solder dip) •Dim ensions (Unit: mm) [ f c n -245D050-l/ l ]

BFQ268

Contextual Info: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with

takamisawa RELAYS

Abstract: takamisawa relay takamisawa relay 12 lr64026 takamisawa power relay FBR244ND024 takamisawa relay 48 vdc FBR244D005 FBR244 takamisawa
Contextual Info: FUJITSU TAKAMISAWA COMPONENT CATALOG MINIATURE RELAY 2 POLES—1 to 2 A FOR SIGNAL SWITCHING FBR244 SERIES • FEATURES ● ● ● ● ● Gold-overlay bifurcated contact Contact material and shape especially suitable for signal switching; assures reliability at low level switching.

Contextual Info: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

MOTOROLA transistor 413

Abstract: transistor br 5 n 60 CR820
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information CR820 The RF Line High Frequency Complementary Pair Transistor Array HIGH FREQUENCY COMPLEMENTARY PAIR TRANSISTOR ARRAY NPN/PNP SILICON . . . designed for use as an output device in very fast video am plifier circuits. The CR820

CD 4049 applications notes

Contextual Info: V L S I Tech nology, in c . VL7C414 STAND-ALONE MODEM INTERFACE CONTROLLER WITH AUTOMATIC MODEM POWER DOWN CONTROL FEATURES DESCRIPTION • Direct interface to VL7C412A single chip single-supply modems The VL7C414 Stand-Alone Modem Interface Controller is specifically

FBR244

Abstract: lr64026 relay FBR244ND024 FBR244ND005
Contextual Info: MINIATURE RELAY 2 POLES—1 to 2 A FOR SIGNAL SWITCHING FBR244 SERIES • FEATURES ● Gold-overlay bifurcated contact Contact material and shape especially suitable for signal switching; assures reliability at low level switching. Conforms to FCC68 standards

BFQ254

Abstract: BFQ234 UBB692 sot172a3
Contextual Info: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

motorola transistor 5331

Abstract: BFQ268
Contextual Info: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to

Contextual Info: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and

BFQ234/I

Abstract: BFQ234 BFQ254
Contextual Info: Philips Semiconductors Product specification - T Z33-05 NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION BFQ234; BFQ234/I D ShE ' PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

Contextual Info: Philips Sem iconductors ^ 5 3 ^ 3 1 0031714 b?fl • APX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I N Af1ER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

Contextual Info: Philips Semiconductors _ - NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION _ Product specification - 7^ 3 3 - 0 5 BFQ268; BFQ268/1 SbE D m 71106Bb DG45bS7 344 H P H I N PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a

motorola transistor 5331

Abstract: BFQ254 BFQ234
Contextual Info: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and

BFQ234

Abstract: BFQ254 UBB364 SOT-172A
Contextual Info: Philips Semiconductors L jb £ 3 ^ 3 1 0Q31714 b7fl BBAPX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I b'lE T> N Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and