23R1 Search Results

50R0500

Abstract: 5SSB30X 5SSB30X0800 thyris
Contextual Info: S I L I C O N S U R G E Diffused pnp structure. Symmetric blocking characteristics with avalanche breakdown capability. Effective protection against repetitive and non-repetitive overvoltages. Suitable for thyristors, transistors and IGBTs. Type and ordering

TPCS8213

Contextual Info: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

S8214

Abstract: TPCS8214
Contextual Info: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)

S8302

Abstract: TPCS8302
Contextual Info: TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPCS8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

s8208

Abstract: TPCS8208
Contextual Info: TPCS8208 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8208 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 13 mΩ (標準)

s8211

Abstract: TPCS8211
Contextual Info: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

50R0500

Abstract: 5SSA20R1600 5SSA23R1300 5SSA38R0800 5SSA23R1400 30R1000 5SSA30R1000 abb traction motor 30R1 5SSA38R0700
Contextual Info: Silicon Surge Voltage Suppressor 5SSA .R Series Doc. No. 5SYA1030-01 Nov.95 Features The 5SSA silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5SSA silicon surge voltage suppressors are best suited to protect power thyristors against small

TPCS8006

Contextual Info: TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8006 High-Speed Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) •

s8208

Abstract: TPCS8208
Contextual Info: TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8208 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)

TPCS8102

Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

TPCS8201

Abstract: S8201
Contextual Info: TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS II TPCS8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

a3180

Abstract: TPCS8303 TPCS83
Contextual Info: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

S8104

Abstract: TPCS8104
Contextual Info: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

S8204

Abstract: S-8204 TPCS8204
Contextual Info: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)

s8211

Abstract: TPCS8211
Contextual Info: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

s8105

Abstract: TPCS8105
Contextual Info: TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8105 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)

Abb breakover diode

Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
Contextual Info: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole ­ rance V >

Contextual Info: TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHⅡπ-MOSⅤ TPCS8008-H High-Speed Switching Applications Switching Regulator Applications Unit: mm DC/DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω (typ.)

Contextual Info: TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8101 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to small and thin package z Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

s8210

Abstract: A/s8210
Contextual Info: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)

Contextual Info: TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8004 High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.)

s8105

Contextual Info: TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8105 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)

Contextual Info: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)