S8214 Search Results

S8214

Abstract: TPCS8214
Contextual Info: S8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ S8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)

SiR470DP

Abstract: S-82146 S82146
Contextual Info: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

DFN-10

Abstract: HP4192A DG2616
Contextual Info: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high

Contextual Info: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high

a1717

Abstract: 2-0A91 SIE848DF
Contextual Info: SPICE Device Model SiE848DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiR402DP

Contextual Info: SPICE Device Model SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

handbook of shipboard electromagnetic shielding practices

Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Contextual Info: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command

Contextual Info: SPICE Device Model Si5432DC Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiR402DP

Abstract: sir402
Contextual Info: SPICE Device Model SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiS426DN

Contextual Info: SPICE Device Model SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiS426DN

Abstract: SIS426
Contextual Info: SPICE Device Model SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

DFN-10

Abstract: HP4192A DG2616
Contextual Info: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high

SiS406DN

Abstract: siliconix application notes
Contextual Info: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiR470DP

Abstract: S-82146 S82146
Contextual Info: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiS406DN

Contextual Info: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

S8214

Abstract: TPCS8214
Contextual Info: S8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ S8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)

Contextual Info: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high

Contextual Info: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high

mosfet 0018

Contextual Info: SPICE Device Model SiR476DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

s8214

Abstract: TPCS8214
Contextual Info: S8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ S8214 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)

S8214

Abstract: TPCS8214
Contextual Info: S8214 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ S8214 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 10.5 mΩ (標準)

a1717

Contextual Info: SPICE Device Model SiE848DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: SPICE Device Model SiR476DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si5432DC

Abstract: 83A17
Contextual Info: SPICE Device Model Si5432DC Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range