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    SIS406DN Search Results

    SIS406DN Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS406DN-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A 1212-8 PPAK Original PDF 13
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    SIS406DN Price and Stock

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    Vishay Intertechnologies SIS406DN-T1-GE3

    Trans MOSFET N-CH 30V 9A 8-Pin PowerPAK 1212 EP T/R
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    Verical () SIS406DN-T1-GE3 3,000 3,000
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    SIS406DN-T1-GE3 2,981 87
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    Avnet Americas SIS406DN-T1-GE3 Tape & Reel 8 Weeks 3,000
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    Mouser Electronics SIS406DN-T1-GE3 95,874
    • 1 $1.28
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    Newark () SIS406DN-T1-GE3 Cut Tape 937 1
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    SIS406DN-T1-GE3 Tape & Reel 937 100
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    SIS406DN-T1-GE3 Tape & Reel 3,000
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    SIS406DN-T1-GE3 Cut Tape 3,000
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    TTI SIS406DN-T1-GE3 Reel 3,000 3,000
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    Bristol Electronics () SIS406DN-T1-GE3 2,743
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    SIS406DN-T1-GE3 917 1
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    Quest Components () SIS406DN-T1-GE3 2,194
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    SIS406DN-T1-GE3 1,364
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    SIS406DN-T1-GE3 733
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    SIS406DN-T1-GE3 733
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    TME SIS406DN-T1-GE3 2,981 1
    • 1 $1.17
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    EBV Elektronik SIS406DN-T1-GE3 53 Weeks 3,000
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    Vishay Huntington SIS406DN-T1-GE3

    MOSFET N-CH 30V 9A 1212-8 PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIS406DN-T1-GE3 90,840
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    SIS406DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original
    sis406dnsis406dn-t1-ge311-mar-11 PDF

    AN609

    Abstract: SiS406DN
    Contextual Info: SiS406DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    sis406dnan60916-jul-08 PDF

    Contextual Info: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original
    sis406dnsis406dn-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original
    sis406dnsis406dn-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    SiS406DN

    Abstract: siliconix application notes
    Contextual Info: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    sis406dns-8214215-sep-08siliconix application notes PDF

    Contextual Info: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original
    sis406dnsis406dn-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    SiS406DN

    Contextual Info: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    sis406dn18-jul-08 PDF

    SiS406DN

    Abstract: sis406dn-t1-ge3
    Contextual Info: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original
    sis406dnsis406dn-t1-ge318-jul-08 PDF

    Contextual Info: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original
    sis406dnsis406dn-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: SPICE Device Model SiS406DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    sis406dn2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    NPCE781BA0DX

    Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
    Contextual Info: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM


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    512mb64mx16bc995rgpio45+11650msnpce781ba0dxnuvoton npce781ba0dx92hd79b1a592hd79b1npce781tps51611npce781bup7534bra8npce781bag7922r61u PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    SCD1U50V3KX-GP

    Abstract: SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP
    Contextual Info: 5 4 3 2 1 D D SW 1 10 1 EJECT_BTN 3 5 2 4 SW -TACT-119-GP 62.40009.671 62.40012.101 C C B B A A mini BD Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title ODD EJT BTN Size Document Number Rev -2 JM41_MINI_BD


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    -tact-119-gpskt-usb-295-gpg547f2p81u-gpsc4d7u16v5zy-gp+12scd1u50v3kx-gp00padstft236br48h172-gpsc10u25v6kx-1gpg547f2sc1u50v5zy-1-gpsrn33j-7-gpsc10u6d3v3mx-gpsis412dn-t1-ge3-gp200kr2f-l-gpsc1u25v3kx-1-gp10kr2f-2-gp PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF