23C200 Search Results

GM23C2000

Abstract: 23c2000
Contextual Info: 23C2000 LG Semicon Co.,Ltd. 262,144 W ORDS x 8 BIT CMOS MASK ROM Pin Configuration Description The GM 23C2000 high perfimance read only memory is organized as 262,144 words by eight bits and has an access time o f 150ns. It is designed to be compatible with all

PD23C2000C

Abstract: UPD23C2000 23C2000
Contextual Info: jk / jr v " * ÌV IE / V NEC Electronics Inc. //P D 23C 20 00 2 ,0 9 7 ,1 5 2 -B IT M A SK -^R 0 G R a m m a b l e CM O S ROM Description Pin Configurations The^P[ 23C2000 is a 2,097,152-bit ROM fabricated with CM OS ‘¡ilicon-gate technology. Static in operation and

midtex

Abstract: midtex relay midtex relays midtex relay 157 157-23C200 relay cross reference General Semiconductor Industries military relay socket about the dc relay general cross references
Contextual Info: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home English | ••• Sunday, 23 October, 2005 Relays Industrial Relays General Purpose CATALOG ● 157-23C200 Cross Reference Search for Parts Competitive Products

23C4000

Abstract: 23C2000 a9za
Contextual Info: SILICON INTEGR ATE» EIE D aassafll 0000000 T • T-4-b-l3-lb CMOS MASK ROM SIS 23C2000/SIS 23C2000A 256Kx8 CMOS MASK ROM FEATURE PIN ASSIGNMENT •Access Time: 200/250ns •Single + 5V Power Supply •Three-State data Outputs •TT L Compatible inputs and outputs

23C2001

Contextual Info: 262 ,1 4 4X 8-BIT CMOS MASK-PROGRAMMABLE ROM Mask PRELIM IN A R Y Features • ■ 2 6 2 ,1 4 4 x 8 - b it o rg a n iz a tio n ■ S in g le + 5 V p o w e r su p p ly M ask p ro g ra m m e d fo r C h ip E nable P o w e rd o w n C E ^ C E [ , C E 2 /C E 2 /N C and o u tp u t enable O E /O E /N C

PDIP-32

Contextual Info: M X2302000 2M-BIT M A S K ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 256K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current - Operating: 40mA - Standby: 100jaA - (50jliA for PLCC) • Supply voltage - 5V ± 10%

23C2000

Abstract: MX23C2000 MX23C2000MC-90 MX23C2000PC-10 MX23C2000PC-12 MX23C2000PC-15 MX23C2000PC-90 MX23C2000QC-10 MX23C2000QC-12 MX23C2000QC-15
Contextual Info: Introduction Selection Guide 23C2000 2M-BIT Mask ROM 8 Bit Output FEATURES ORDER INFORMATION • Bit organization - 256K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current - Operating: 40mA - Standby: 100mA - (50mA for PLCC)

MX23C2000

Abstract: MX23C2000PC-10 MX23C2000PC-12 MX23C2000PC-15 MX23C2000PC-70 MX23C2000PC-90 MX23C2000QC-10 MX23C2000QC-12 MX23C2000QC-70 MX23C2000QC-90
Contextual Info: INDEX 23C2000 2M-BIT MASK ROM 8 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 256K x 8 (byte mode) • Fast access time - Random access: 70ns (max.) • Current - Operating: 40mA - Standby: 100uA - (50uA for PLCC) • Supply voltage - 5V ± 10%

KM23C2001

Abstract: mask rom mask rom 2m 23C2001
Contextual Info: 23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 262,144 x 8 bit organization Fast access time: 150ns (max.) Supply voltage: single + SV Current consumption Operating: 50mA (max.) Fully static operation

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 ODlbTbb Sbb 23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The 23C2001 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

1CC3

Contextual Info: mMACRONIX.AINC. M X2 3 C20 00 SM-BIT 25BK x 8 CMOS MASK ROM FEATURES • • • • • • Operating current: 40mA • Standbycurrent: 100|i A • Package type: - 32 pin plastic DIP - 32 pin plastic SOP 256K x 8 organization Single +5V power supply Fast access time: 150/200ns (max)

23C2001

Contextual Info: CMOS MASK ROM 23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 262,144 x 8 bit organization The K M 2 3 C 2 0 0 1 is a fu lly s ta tic m ask p ro g ra m m a b le R OM o rg a n iz e d 2 6 2 ,1 4 4 x 8 b it It is fa b ric a te d u s in g

23C2000-15

Contextual Info: M X 2 3 C 2O O O 2M-BIT£25BK x 81 CMOS MASK ROM FEATURES • • • • • • Operating current: 40mA • Standby current: 100|iA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP - 32 Pin plastic PLCC - 32 Pin plastic TSOP 256K x 8 organization

Contextual Info: 23C2000 2M-BIT MASK ROM 8 BIT OUTPUT O RDER INFORMATION FEATURES Bit organization - 256K x 8 (byte mode) Fast access time - Random access: 90ns (max.) Current - Operating: 40mA - Standby: 100|aA - (50|aA for PLCC) Supply voltage - 5V ± 10% Package -3 2 pin PDIP (600 mil)

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

23C2001

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • VTbHlHB 0GlbT70 T^V «SIIGK 23C2001A G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The 23C2001A is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using

Contextual Info: IV D C IC 23C2000 2M -B IT 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION The M X 23C 2000 is a 5V only, 2M-bit, Read Only M em ­ ory. It is organized as 256K words by 8 bit, operates from a single +5 volt supply, has a static standby mode, and has an access time of 120/150/200ns. It is designed to be