toshiba 32k*8 sram
Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258
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km4164km41c256km41c257km41c258+15km41c464km41c466km41c1000km41c1001km41c1002km44c256toshiba 32k*8 sramm5m23c100m5m5265seeq dq2816am5m23c400mb832001hitachi 64k dramtc511000tc51464
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41c25641c25741c25841c464+1441c46641c100044c25644c25844c1002tc51257fujitsu 814100tc 55464 toshibahn62304hn623257658128816bhn62324m7202a
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PD23C2000C
Abstract: UPD23C2000 23C2000
Contextual Info: jk / jr v " * ÌV IE / V NEC Electronics Inc. //P D 23C 20 00 2 ,0 9 7 ,1 5 2 -B IT M A SK -^R 0 G R a m m a b l e CM O S ROM Description Pin Configurations The^P[ 23C2000 is a 2,097,152-bit ROM fabricated with CM OS ‘¡ilicon-gate technology. Static in operation and
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upd23c2000152-bitpd23c200040-pin+452-pin3-004984apd23c2000c23c2000
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UPD23C2000
Contextual Info: PD23C2000 2,097,152-Bit Mask-Programmable CMOS ROM Description Pin Configurations Th e fiP D 23 C 2 000 is a 2,097,152-bit ROM fab ricated w ith C M O S silicon-gate technology. Th e device is static in operation and ca n be organized as 131,072 w ords by 16
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upd23c2000152-bitjjpd23c2000 |
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41c25641c25741c25841c464+1441c46641c100041c100244c25644c25841c4000tc55b8128424170 neccy7019944c1000iot7164hn62308bphn62404ptc5116100
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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tc511001tc514101514170b514280b+16tc5316200pkm2x16100km23c16000gkm23c16100gkm23c16000fpkm23c16100fptc55b8128km23c4000agtc534000afhn62308bptc551632hitachi crossmb8368512uhitachi 64k dramtc55b4256
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UPD23C2000
Abstract: 33AO nec 40-pin plastic dip
Contextual Info: N Hi PD23C2000 2,097,152-Bit Mask-Programmable CMOS ROM Description Pin Configurations Th e ftP D 23 C 200 0 is a 2,097,152-bit ROM fab ricated with C M O S siiicon-gate technology. T h e device is static in operation and can be organized as 131,072 w ords by 16
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upd23c2000152-bitpd23c2000fpd23c2000+3ppd23c200033aonec 40-pin plastic dip
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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km41c256km41c257km41c258km41c464+16km41c466km41c1000km41c1001km41c1002km44c256km44c258al 232 nectc55b4257mb832001nm9306eeprom cross referenced41264tc5116100hn28c256nm9307oki cross reference
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D7528AC
Abstract: uPD27C2000 23C4000 pd77p20 D27c512 PD75402 d27c1001 pd75216 D75328 JPD7527A
Contextual Info: NEC NEC E lectronics Inc. ROM Code Submission Guide Application Note 90-05 Introduction Minimum Requirements This a p p lic a tio n n o te p ro vid e s g u id e lin e s fo r su b m it tin g th e d a ta file s used by NEC to p ro g ra m se m icu s to m iz e d in te g ra te d c irc u its a c o m p le te lis t of w h ich
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30000-j6ffff-16d7528acupd27c2000+823c4000pd77p20d27c512pd75402d27c1001pd75216d75328jpd7527a
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UPD23C2000
Contextual Info: p PD 2 3C 200 0A NEC 2,097,152-Blt Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The /PD23C2000A is a 2,097,152-bit ROM fabricated with CMOS silicon-gate technology. This device is static in operation and can be organized as 131,072 words by
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152-blt40-pinupd23c2000a152-bit+5pd23c2000aipd23c2000a-1ipd23c2000a000a-1upd23c2000
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