225AA Search Results

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

BD438 equivalent

Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE

scr to-126

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Je 243

Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
Contextual Info: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp

T0407

Abstract: TRIAC TO126
Contextual Info: FT04.K LOGIC LEVEL TRIAC On-State Current 4 Amp TO-225AA TO-126 Gate Trigger Current < 10 mA Off-State Voltage 400 V ÷ 800 V FEATURES • Glass/passivated die junctions • Medium current Triac • Ideal for automated placement • Low thermal resistance

B0139

Abstract: b0135 bd140 cross reference TRANSISTOR B0135 NPN TRANSISTOR NPN B0135 BD232 motorola power transistor to-126 BD167 NPN/B0139-16 BD169
Contextual Info: MOTOROLA SC XSTRS/R F 4fc>E D • b3b?254 OQT B H D ' l 0 «MOTb T ~ $2> ~ 0 3 TABLE 8 - PLASTIC TO-225 Type (Formerly TO-126 Type) STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE yggw STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 77-07 (TO-225AA) Resistive Switching

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: FS04.K SENSITIVE GATE SCR On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-225AA TO-126 K FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability

TO-220 transistor package

Abstract: transistor TO220 Thyristor to220 PDIP16 TO-220AB thyristor pins TO-226AC
Contextual Info: 1948-2012.qxp:QuarkCatalogTempNew 9/11/12 8:17 AM Page 1948 Packages Common Package Types DO-41 Plastic Axial Lead Button 3A SURMETIC TO-92 Two Lead TO226AC TOPCAN TO-92 TO226AA TO-126 TO-225AA TO-220 Two Lead TO-220 Three Lead TO-220 TO-220AB TO-220 Five Leads

fs0402dk

Abstract: FS0402
Contextual Info: FS04.K SENSITIVE GATE SCR On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-225AA TO-126 K FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability

Contextual Info: FT04.K LOGIC LEVEL TRIAC On-State Current 4 Amp TO-225AA TO-126 Gate Trigger Current < 10 mA Off-State Voltage 400 V ÷ 800 V FEATURES • Glass/passivated die junctions • Medium current Triac • Ideal for automated placement • Low thermal resistance

FT04

Abstract: triac mw 134
Contextual Info: FT04.K LOGIC LEVEL TRIAC TO-225AA / TO-126 Gate Trigger Current < 10 mA On-State Current 4 Amp Off-State Voltage 200 V ÷ 800 V MT1 MT2 G This series of TRIACs uses a high performance PNPN technology. MT2 G These parts are intended for general purpose AC switching applications with

BD790

Abstract: BD792 BD789 BD791 MBR340 MSD6100
Contextual Info: MOTOROLA Order this document by BD789/D SEMICONDUCTOR TECHNICAL DATA NPN BD789 BD791* PNP BD790 BD792* Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage —

2n4921 amplifier circuit

Abstract: 2N4923 2N4918 2N4919 2N4920 2N4921 2N4922
Contextual Info: ON Semiconductor 2N4921 thru 2N4923 * Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *ON Semiconductor Preferred Device • Low Saturation Voltage —

MJE200

Abstract: 1N5825 MJE210 MSD6100
Contextual Info: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —

Case 77-08

Abstract: 130 motorola thyristor T2322 T2323
Contextual Info: MOTOROLA Order this document by T2322/D SEMICONDUCTOR TECHNICAL DATA Sensitive Gate Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and

mje350 transistor

Abstract: Motorola bipolar transistor MJE350 MJE350 PIN
Contextual Info: MOTOROLA Order this document by MJE350/D SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated

BD169D

Abstract: BD169 transistor bd169 transistor bd170 BD170 Motorola design of audio amplifier MOTOROLA TRANSISTOR
Contextual Info: MOTOROLA Order this document by BD169/D SEMICONDUCTOR TECHNICAL DATA BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTOR NPN SILICON 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

thermafilm

Abstract: 2088AB thermasil EB107/D sync nut eb107 ierc heatsink richco Silicone Rubber 35 Shore A thermafilm 1 mhw 592
Contextual Info: AN1040/D Mounting Considerations For Power Semiconductors http://onsemi.com Prepared by: Bill Roehr APPLICATION NOTE INTRODUCTION Current and power ratings of semiconductors are inseparably linked to their thermal environment. Except for lead–mounted parts used at low currents, a heat exchanger

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

C106 thyristor

Abstract: C106D motorola thyristor c106d C106D C106 c106d pin out B52200F006 C106F motorola 305 C106A
Contextual Info: MOTOROLA Order this document by C106/D SEMICONDUCTOR TECHNICAL DATA C106 Series * Silicon Controlled Rectifier Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Glassivated PNPN devices designed for high volume consumer applications such

2N6034G

Abstract: 2N6039 2N6036G 1N5825 2N6034 2N6035 2N6036 2N6038 MSD6100
Contextual Info: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching