21DBMW Search Results

TG2006F

Contextual Info: TOSHIBA TENTATIVE TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz POWER AMP FEATURES • VDD = 3V, lDD = 130mA Typ. • PQ = 21dBmW (Min), Gp = 22dB (Typ.) • Single voltage supply MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

21dbmw

Abstract: 1012 TOSHIBA sf 1012 TG2005F TG2005 961001EBA1
Contextual Info: TOSHIBA TG2005F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2005F 1.9GHz POWER AMP FEATURES • VDD = 3V, lDD = 180mA Typ. • P0 = 21dBmW (Min), Gp = 20dB (Typ.) • Control voltage : 0V/3V MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

TG2006F

Contextual Info: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V Low current consumption: It = 130 mA typ. Small package: SM8 package (2.9 x 2.8 × 1.1mm)

ULN2003APG china

Abstract: tb62216 TB62216FG TC7600FNG TC62D722 ULN2803APG ULN2003APG IC CONNECTION TCV7106 TB62214 TPD1053F
Contextual Info: SEMICONDUCTOR GENERAL CATALOG General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs Analog Switch Intelligent Power Devices (IPDs) Interface Drivers Motor Drivers LED Driver ICs Power Supply ICs Small-Signal MMICs (Radio-Frequency Cell Packs)

tb62506fg

Abstract: TB62207BFG tb62506 TB62207 ULN2803APG ULN2003APG toshiba uln2803apg TPD1047F ULN2003APG motor TB62201AFG
Contextual Info: General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs z 118 Intelligent Power Devices (IPDs) z 121 Interface Drivers z 124 Motor Drivers z 127 Power Supply ICs z 132 Small-Signal MMICs (Radio-Frequency Cell Packs) z 142 117 Operational Amplifier ICs (Op Amp ICs) & Comparator ICs

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

TB6604FTG

Abstract: TB6604 TB6603FTG tb6603 TB62216FG TB62216FNG TB62213FNG TC7600FNG TC62D722 TB62783
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 汎用リニア IC オペアンプ/コンパレータ アナログスイッチ インテリジェントパワーデバイス IPD インタフェースドライバ モータドライバ LED ドライバ IC

Contextual Info: T O SH IB A TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz BAND POWER AMPLIFIER PHSf DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation Vd = 3V, Vg = 0 to 3V • Low Current Consumption lt= 130mA Typ.

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

QFP128 0.4mm

Abstract: ddr pin out QFP128 TC6380AF TC6377AF TB6539N QFP100 TC6374AF
Contextual Info: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2001年6月号 米国にマイクロプロセッサの開発・マーケティング会社を設立 当社は システムLSIのマーケティングおよび開発を行なう新会社、ArTile Microsystems

mgcs

Contextual Info: TA4022F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4022F VHF-UHF Wide Band Amplifier Applications Features • Low distortion: IM3 = 58dBc @45 MHz • Operating supply voltage: VCC = 4.75 V~5.25 V Absolute Maximum Ratings (Ta = 25°C)

21dbmw

Contextual Info: TA4022F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4022F VHF-UHF Wide Band Amplifier Applications Features • Low distortion: IM3 = 58dBc @45 MHz • Operating supply voltage: VCC = 4.75 V~5.25 V Weight: 0.02g (typ.) Absolute Maximum Ratings (Ta = 25°C)

TG2006F

Contextual Info: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V Low current consumption: It = 130 mA typ. Small package: SM8 package (2.9 x 2.8 × 1.1mm)

4022F

Abstract: TA4022F
Contextual Info: TA4022F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4022F VHF-UHF Wide Band Amplifier Applications Features • Low distortion: IM3 = 58dBc @45 MHz • Operating supply voltage: VCC = 4.75 V~5.25 V Absolute Maximum Ratings (Ta = 25°C)

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

Contextual Info: TOSHIBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation : Vd = 3V, V g = 0 to 3V • Low Current Consumption : It = 130mA Typ.

Contextual Info: TO SHIBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC 2 QQ6 F T G 1.9GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation Vd = 3V, V g = 0 to 3V • Low Current Consumption It = 130mA Typ.

RFM70U12D

Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

TC7600FNG

Abstract: TB6584FNG TA4029 tb62237 TPD*1039s ULN2803APG tb6584 TB6586 TPD1047F tb6560
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 汎用リニア IC オペアンプ/コンパレータ アナログスイッチ インテリジェントパワーデバイス IPD インタフェースドライバ モータドライバ 電源用 IC 小信号 MMIC (高周波セルパック)

TG20

Abstract: TG2006F
Contextual Info: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA typ. l Small package: SM8 package (2.9 x 2.8 × 1.1mm)

TGI7785-120L

Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード 小信号 MMIC 高周波セルパック マイクロ波半導体